Room-temperature creation and conversion of individual skyrmion bags in magnetic multilayered disks

Authors: Quan Liu, Shouzhe Dong, Yutong Wang, Junhang Liu, Guofu Xu, Hua Bai, Hao Bai, Weideng Sun, Zhiying Cheng, Yunjie Yan, Guozhi Chai, Jing Ma, Jianwang Cai, Cheng Song, Wanjun Jiang, Jing Zhu, Cewen Nan, Houbing Huang, Yonggang Zhao

Source: Nature Communications, Vol 16, Iss 1, Pp 1-10 (2025)

Subject Terms: Science

File Description: electronic resource

Relation: https://doaj.org/toc/2041-1723

Access URL: https://doaj.org/article/ec21d6b5f6ae4ad9b34172f45a32dcdb

Electric-field control of skyrmions in multiferroic heterostructure via magnetoelectric coupling

Authors: You Ba, Shihao Zhuang, Yike Zhang, Yutong Wang, Yang Gao, Hengan Zhou, Mingfeng Chen, Weideng Sun, Quan Liu, Guozhi Chai, Jing Ma, Ying Zhang, Huanfang Tian, Haifeng Du, Wanjun Jiang, Cewen Nan, Jia-Mian Hu, Yonggang Zhao

Source: Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)

Subject Terms: Science

File Description: electronic resource

Relation: https://doaj.org/toc/2041-1723

Access URL: https://doaj.org/article/7178eeee9eda4a4b80c03c92d8e62fc7

Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling.

Authors: Yike Zhang^1,2, Weideng Sun^1,2, Kaihua Cao³, Xiao-Xue Yang⁴, Yongqiang Yang^5,6, Shiyang Lu³, Ao Du³, Chaoqun Hu^7,8, Ce Feng^1,2, Yutong Wang^1,2, Jianwang Cai^7,8, Baoshan Cui⁹, Hong-Guang Piao⁴, Weisheng Zhao³ weisheng.zhao@buaa.edu.cn, Yonggang Zhao^1,2 ygzhao@tsinghua.edu.cn

Source: Science Advances. 4/19/2024, Vol. 10 Issue 16, p1-9. 9p.

Subject Terms: *MAGNETIC tunnelling, *ELECTRIC currents, *MAGNETIC anisotropy, *ENERGY dissipation, *ELECTRIC resistance, *MAGNETIC fields, *JOSEPHSON junctions, *PHOTOVOLTAIC effect

Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures.

Authors: Ran Jiang, Zuyin Han, Weideng Sun, Xianghao Du, Zhengran Wu, Hyung-Suk Jung

Source: Applied Physics Letters; 10/12/2015, Vol. 107 Issue 15, p1-4, 4p, 1 Diagram, 3 Graphs

Subject Terms: FERROELECTRICITY, FIELD-effect devices, SUBMILLIMETER waves, GRAPHENE, SILICON

Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures.

Authors: Ran Jiang¹, Zuyin Han¹, Weideng Sun¹, Xianghao Du¹, Zhengran Wu¹, Hyung-Suk Jung²

Source: Applied Physics Letters; 10/12/2015, Vol. 107 Issue 15, p1-4, 4p, 1 Diagram, 3 Graphs

Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells.

Authors: Ran Jiang, Zhengran Wu, Xianghao Du, Zuyin Han, Weideng Sun

Source: Applied Physics Letters; 7/6/2015, Vol. 107 Issue 1, p1-4, 4p, 1 Diagram, 3 Graphs

Subject Terms: FERROELECTRICITY, ELECTRIC resistance, TITANIUM nitride, HAFNIUM oxide, POLARIZATION (Electricity)

Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells.

Authors: Ran Jiang¹, Zhengran Wu¹, Xianghao Du¹, Zuyin Han¹, Weideng Sun¹

Source: Applied Physics Letters; 7/6/2015, Vol. 107 Issue 1, p1-4, 4p, 1 Diagram, 3 Graphs

Strong photoluminescence of the porous silicon with HfO2-filled microcavities.

Authors: Ran Jiang, Zhengran Wu, Xianghao Du, Zuyin Han, Weideng Sun

Source: Applied Physics Letters; 6/22/2015, Vol. 106 Issue 25, p1-4, 4p, 2 Diagrams, 3 Graphs

Subject Terms: PHOTOLUMINESCENCE, SILICON research, HYDROGEN fluoride, CRYSTALS, DIELECTRICS research, FERROELECTRICITY

Strong photoluminescence of the porous silicon with HfO2-filled microcavities.

Authors: Ran Jiang¹, Zhengran Wu¹, Xianghao Du¹, Zuyin Han¹, Weideng Sun¹

Source: Applied Physics Letters; 6/22/2015, Vol. 106 Issue 25, p1-4, 4p, 2 Diagrams, 3 Graphs

Investigation of chemical distribution in the oxide bulk layer in Ti/HfO2/Pt memory devices using x-ray photoelectron spectroscopy.

Authors: Ran Jiang, Xianghao Du, Zuyin Han, Weideng Sun

Source: Applied Physics Letters; 4/30/2015, Vol. 106 Issue 17, p1-4, 4p, 2 Diagrams, 3 Graphs

Subject Terms: TITANIUM compounds, COMPUTER storage devices, OXIDE coating, X-ray photoelectron spectroscopy, VACANCIES in crystals

Investigation of chemical distribution in the oxide bulk layer in Ti/HfO2/Pt memory devices using x-ray photoelectron spectroscopy.

Authors: Ran Jiang¹, Xianghao Du¹, Zuyin Han¹, Weideng Sun¹

Source: Applied Physics Letters; 4/30/2015, Vol. 106 Issue 17, p1-4, 4p, 2 Diagrams, 3 Graphs