Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated With Si Ions

Authors: Luo, X., Montes, J., Koukourinkova, S.D., Vaandrager, B.L., Bielejec, E.S., Vizkelethy, G., Schrimpf, R.D., Fleetwood, D.M., Zhang, E.X.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):591-598 Apr, 2024

Heavy-Ion-Induced Displacement Damage Effects on WOx ECRAM

Authors: Marinella, M.J., Bennett, C.H., Zutter, B., Siath, M., Spear, M., Vizkelethy, G., Xiao, T.P., Fuller, E., Hughart, D., Agarwal, S., Li, Y., Talin, A.A.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):579-584 Apr, 2024

Radiation Response of Domain-Wall Magnetic Tunnel Junction Logic Devices

Authors: Bennett, C.H., Xiao, T.P., Leonard, T., Zhan, X., Gearba-Dolocan, R., Young, J., Vizkelethy, G., Bielejec, E., Hughart, D., Marinella, M., Incorvia, J.A.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):454-460 Apr, 2024

Response of 5-nm Bulk FinFET SRAMs to Extreme Ionizing and Non-Ionizing Doses

Authors: Xiong, Y., Pieper, N.J., Dodds, N.A., Vizkelethy, G., Nowlin, R.N., Bhuva, B.L.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):437-445 Apr, 2024

Transient Photocurrent From High-Voltage Vertical GaN Diodes Irradiated With Electrons: Experiments and Simulations

Authors: Koukourinkova, S.D., Colon, A., Doyle, B.L., Vizkelethy, G., Pickrell, G.W., Gunning, B.P., Kropka, K.E., Bielejec, E.S., Wampler, W.R.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(4):469-477 Apr, 2023

Statistical analysis of displacement damage in small devices from neutron and ion irradiation.

Authors: Wampler, W. R.¹ (AUTHOR) wrwampl@sandia.gov, Vizkelethy, G.¹ (AUTHOR), Titze, M.¹ (AUTHOR)

Source: Journal of Applied Physics. 11/28/2024, Vol. 136 Issue 20, p1-8. 8p.

Subject Terms: *DISTRIBUTION (Probability theory), *FIELD-effect transistors, *SEMICONDUCTOR devices, *STATISTICAL models, *STATISTICS, *NEUTRON irradiation

Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular Anisotropy

Authors: Xiao, T.P., Bennett, C.H., Mancoff, F.B., Manuel, J.E., Hughart, D.R., Jacobs-Gedrim, R.B., Bielejec, E.S., Vizkelethy, G., Sun, J., Aggarwal, S., Arghavani, R., Marinella, M.J.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(5):581-587 May, 2021

Irradiation Effects on Perpendicular Anisotropy Spin–Orbit Torque Magnetic Tunnel Junctions

Authors: Alamdar, M., Chang, L.J., Jarvis, K., Kotula, P., Cui, C., Gearba-Dolocan, R., Liu, Y., Antunano, E., Manuel, J.E., Vizkelethy, G., Xue, L., Jacobs-Gedrim, R., Bennett, C.H., Xiao, T.P., Hughart, D., Bielejec, E., Marinella, M.J., Incorvia, J.A.C.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(5):665-670 May, 2021

Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose

Authors: Esposito, M.G., Manuel, J.E., Privat, A., Xiao, T.P., Garland, D., Bielejec, E., Vizkelethy, G., Dickerson, J., Brunhaver, J., Talin, A.A., Ashby, D., King, M.P., Barnaby, H., Mclain, M., Marinella, M.J.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(5):724-732 May, 2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Authors: Tonigan, A.M., Ball, D., Vizkelethy, G., Black, J., Black, D., Trippe, J., Bielejec, E., Alles, M.L., Reed, R., Schrimpf, R.D.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(3):305-311 Mar, 2021

Sensitive-Volume Model of Single-Event Latchup for a 180-nm SRAM Test Structure

Authors: Wang, P., Sternberg, A.L., Sierawski, B.D., Zhang, E.X., Warren, K.M., Tonigan, A.M., Brewer, R.M., Dodds, N.A., Vizkelethy, G., Jordan, S.L., Fleetwood, D.M., Reed, R.A., Schrimpf, R.D.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 67(9):2015-2020 Sep, 2020

Photocurrent From Single Collision 14-MeV Neutrons in GaN and GaAs

Authors: Jasica, M.J., Wampler, W.R., Vizkelethy, G., Hehr, B.D., Bielejec, E.S.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 67(1):221-227 Jan, 2020

Training a Neural Network on Analog TaOx ReRAM Devices Irradiated With Heavy Ions: Effects on Classification Accuracy Demonstrated With CrossSim

Authors: Jacobs-Gedrim, R.B., Hughart, D.R., Agarwal, S., Vizkelethy, G., Bielejec, E.S., Vaandrager, B.L., Swanson, S.E., Knisely, K.E., Taggart, J.L., Barnaby, H.J., Marinella, M.J.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 66(1):54-60 Jan, 2019

Radiation-induced resistance changes in TaOx and TiO2 memristors

Authors: Hughart, D. R., Lohn, A. J., Mickel, P. R., Dodd, P. E., Shaneyfelt, M. R., Silva, A. I., Bielejec, E., Vizkelethy, G., Doyle, B. L., Marshall, M. T., McLain, M. L., Marinella, M. J., Dalton, S. M.

Source: 2014 IEEE Aerospace Conference Aerospace Conference, 2014 IEEE. :1-11 Mar, 2014

Relation: 2014 IEEE Aerospace Conference

Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

Authors: King, M. P., Armstrong, A. M., Dickerson, J. R., Vizkelethy, G., Fleming, R. M., Campbell, J., Wampler, W. R., Kizilyalli, I. C., Bour, D. P., Aktas, O., Nie, H., Disney, D., Wierer, J., Allerman, A. A., Moseley, M. W., Leonard, F., Talin, A. A., Kaplar, R. J.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 62(6):2912-2918 Dec, 2015

Sub-Micron Resolution of Localized Ion Beam Induced Charge Reduction in Silicon Detectors Damaged by Heavy Ions

Authors: Auden, E. C., Pacheco, J. L., Bielejec, E., Vizkelethy, G., Abraham, J. B. S., Doyle, B. L.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 62(6):2919-2925 Dec, 2015

Total ionizing dose and displacement damage effects on TaOx memristive memories

Authors: Hughart, D. R., Dalton, S. M., Mickel, P. R., Dodd, P. E., Shaneyfelt, M. R., Bielejec, E., Vizkelethy, G., Marinella, M. J.

Source: 2013 IEEE Aerospace Conference Aerospace Conference, 2013 IEEE. :1-10 Mar, 2013

Relation: 2013 IEEE Aerospace Conference

Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam

Authors: Dodds, N. A., Schwank, J. R., Shaneyfelt, M. R., Dodd, P. E., Doyle, B. L., Trinczek, M., Blackmore, E. W., Rodbell, K. P., Gordon, M. S., Reed, R. A., Pellish, J. A., LaBel, K. A., Marshall, P. W., Swanson, S. E., Vizkelethy, G., Van Deusen, S., Sexton, F. W., Martinez, M. J.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 61(6):2904-2914 Dec, 2014

Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in ${\rm TaO}_{\rm x}$ Memristors

Authors: Hughart, D. R., Pacheco, J. L., Lohn, A. J., Mickel, P. R., Bielejec, E., Vizkelethy, G., Doyle, B. L., Wolfley, S. L., Dodd, P. E., Shaneyfelt, M. R., McLain, M. L., Marinella, M. J.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 61(6):2965-2971 Dec, 2014

A Comparison of the Radiation Response of ${\rm TaO}_{\rm x}$ and ${\rm TiO}_2$ Memristors

Authors: Hughart, D. R., Lohn, A. J., Mickel, P. R., Dalton, S. M., Dodd, P. E., Shaneyfelt, M. R., Silva, A. I., Bielejec, E., Vizkelethy, G., Marshall, M. T., McLain, M. L., Marinella, M. J.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 60(6):4512-4519 Dec, 2013