Dark Current and Clock-Induced Charges in a Fully Depleted Charge Domain CDTI-Based CCD-on-CMOS Image Sensor

Authors: Salih Alj, A., Touron, P., Roy, F., Tournier, A., Michelot, J., Demiguel, S., Virmontois, C., Lalucaa, V., Magnan, P., Goiffon, V.

Source: IEEE Sensors Journal IEEE Sensors J. Sensors Journal, IEEE. 24(16):25652-25661 Aug, 2024

Effects of X-Ray and γ-Ray Irradiations on 2-D-Planar and 3-D-Stacked CMOS SPADs

Authors: Jouni, A., Mamdy, B., Malherbe, V., Lalucaa, V., Virmontois, C., Gasiot, G., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(8):1753-1765 Aug, 2024

Dark Current Random Telegraph Signal in Proton-Irradiated Single InGaAs Photodiodes

Authors: Benfante, M., Reverchon, J., Durnez, C., Virmontois, C., Demiguel, S., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(8):1783-1788 Aug, 2024

Investigating Dark Current Random Telegraph Signal in a HgCdTe H4RG-10 Infrared Detector for Space Application

Authors: Antonsanti, A., Ryder, L.D., Le Roch, A., Waczynski, A., Miko, L., Delo, G., Cillis, A., Waczynski, S., Feggans, K., Barth, J.D., Goiffon, V., Virmontois, C., Hill, R.J., Wollack, E., Lauenstein, J.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(8):1738-1746 Aug, 2024

Total Ionizing Dose Effects on a CDTI-Based CCD-on-CMOS Through Buildup of Interface Traps and Oxide Charges

Authors: Alj, A.S., Touron, P., Roy, F., Demiguel, S., Michelot, J., Lalucaa, V., Virmontois, C., Magnan, P., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(8):1774-1782 Aug, 2024

Impact of Irradiation Temperature, Doping, and Proton Energy on InGaAs Photodiodes

Authors: Benfante, M., Reverchon, J., Virmontois, C., Demiguel, S., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):719-727 Apr, 2024

Effect of Proton Energy and Bias Conditions During Irradiation on CMOS Single-Photon Avalanche Diodes

Authors: Jouni, A., Malherbe, V., Mamdy, B., Thery, T., Correas, V., De Paoli, S., Lalucaa, V., Virmontois, C., Gasiot, G., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):710-718 Apr, 2024

Study of Proton-Induced Defects in 40-nm CMOS SPADs

Authors: Jouni, A., Malherbe, V., Mamdy, B., Thery, T., Sicre, M., Soussan, D., Lorquet, V., Paoli, S.D., Belloir, J., Lalucaa, V., Virmontois, C., Gasiot, G., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(8):1680-1686 Aug, 2023

Ionizing Radiation Effects on Hole Collection Backside-Illuminated p-Type Deep-Trench-Pinned Photo-MOS Pixels Under Image Acquisition

Authors: Antonsanti, A., Goiffon, V., Roy, F., Roch, A.L., Ryder, L.D., Malherbe, V., Roche, P., Nier, O., Virmontois, C., Lauenstein, J.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(8):1958-1965 Aug, 2023

Capacitive Deep Trench Isolation-Based CCD-on-CMOS Image Sensor Sensitivity to Total Ionizing Dose

Authors: Salih Alj, A., Touron, P., Roy, F., Demiguel, S., Michelot, J., Virmontois, C., Magnan, P., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(8):2018-2026 Aug, 2023

Electric Field-Enhanced Generation Current in Proton Irradiated InGaAs Photodiodes

Authors: Benfante, M., Reverchon, J., Gilard, O., Demiguel, S., Virmontois, C., Durnez, C., Dartois, T., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(4):523-531 Apr, 2023

Design, Annealing, and Electric Field Effects on Proton and Gamma Irradiated MWIR HgCdTe Focal Plane Arrays

Authors: Dinand, S., Gravrand, O., De Borniol, E., Baier, N., Rizzolo, S., Saint-Pe, O., Virmontois, C., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(4):532-540 Apr, 2023

Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation

Authors: Jouni, A., Sicre, M., Malherbe, V., Mamdy, B., Thery, T., Belloir, J., Soussan, D., De Paoli, S., Lorquet, V., Lalucaa, V., Virmontois, C., Gasiot, G., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(4):515-522 Apr, 2023

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor After Proton Irradiation

Authors: Antonsanti, A., Virmontois, C., Lauenstein, J., Le Roch, A., Dewitte, H., Goiffon, V.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 69(7):1506-1514 Jul, 2022

Dark Current Random Telegraph Signal in visible and SWIR Direct Cu-Cu bonding InGaAs Image Sensor

Authors: Lalucaa, V., Calvinhac, L., Virmontois, C.

Source: 2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2021 21th European Conference. :1-4 Sep, 2021

Relation: 2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

Radiation-Induced Junction-Leakage Random-Telegraph-Signal

Authors: Dewitte, H., Goiffon, V., Le Roch, A., Rizzolo, S., Virmontois, C., Marcandella, C., Paillet, P.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 69(3):290-298 Mar, 2022

Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation

Authors: Coronetti, A., Alia, R.G., Budroweit, J., Rajkowski, T., Costa Lopes, I.D., Niskanen, K., Soderstrom, D., Cazzaniga, C., Ferraro, R., Danzeca, S., Mekki, J., Manni, F., Dangla, D., Virmontois, C., Kerboub, N., Koelpin, A., Saigne, F., Wang, P., Pouget, V., Touboul, A., Javanainen, A., Kettunen, H., Germanicus, R.C.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(5):958-969 May, 2021

Dark Current Random Telegraph Signals in Short-Wavelength Infrared Image Sensors Based on InGaAs

Authors: Virmontois, C., Belloir, J.-M., Pistre, L., Patier, L., Gilard, O., Bardoux, A., Goiffon, V., Reverchon, J.-L., Colin, T., Berdin, E., Saint-Pe, O.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(5):770-776 May, 2021

Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

Authors: Durnez, C., Goiffon, V., Virmontois, C., Magnan, P., Rubaldo, L.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(11):4940-4946 Nov, 2020

Capacitive Trench-Based Charge Transfer Device

Authors: Touron, P., Roy, F., Magnan, P., Marcelot, O., Demiguel, S., Virmontois, C.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 41(9):1388-1391 Sep, 2020