Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment

Authors: Shuaiying Zheng, Chengyuan Wang, Shaocong Lv, Liwei Dong, Zhijun Li, Qian Xin, Aimin Song, Jiawei Zhang, Yuxiang Li

Source: Nanomaterials, Vol 15, Iss 6, p 460 (2025)

Subject Terms: amorphous InGaZnO4, top-gate thin-film transistor, two-step annealing treatment, Chemistry, QD1-999

File Description: electronic resource

Relation: https://www.mdpi.com/2079-4991/15/6/460; https://doaj.org/toc/2079-4991

Access URL: https://doaj.org/article/205475100b3543c2aca636f1f64ccfe2

Strategies of formulation and lyophilization process for sodium chloride-mannitol-protein-based products

Authors: Lin, Chenying, Zhang, Xiaozhang, Yang, Chunsheng, Jin, Zhaowei, Guo, Jeremy ^⁎

Source: In Journal of Pharmaceutical Sciences January 2025

Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor

Authors: Peng, C., Yang, S., Pan, C., Li, X., Zhang, J.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(10):4262-4268 Oct, 2020

Microstructure Evolution and Tensile Properties of Medium Manganese Steel Heat Treated by Two-Step Annealing

Authors: Tao Kang, Zhanyu Zhan, Changcheng Wang, Zhengzhi Zhao, Juhua Liang, Lele Yao

Source: Metals, Vol 14, Iss 9, p 1008 (2024)

Subject Terms: medium manganese steel, element partition, microstructure, mechanical properties, two-step annealing, Mining engineering. Metallurgy, TN1-997

File Description: electronic resource

Relation: https://www.mdpi.com/2075-4701/14/9/1008; https://doaj.org/toc/2075-4701

Access URL: https://doaj.org/article/6c5b60db1680449eaf527860a16eb293

Towards High-Temperature MEMS: Two-Step Annealing Suppressed Recrystallization in Thin Multilayer Pt-Rh/Zr Films

Authors: Georgii A. Pleshakov, Ivan A. Kalinin, Alexey V. Ivanov, Ilya V. Roslyakov, Igor V. Yaminsky, Kirill S. Napolskii

Source: Micromachines, Vol 14, Iss 11, p 2003 (2023)

Subject Terms: thin film, platinum–rhodium alloy, zirconium dioxide, two-step annealing, recrystallization suppression, high-temperature stability, Mechanical engineering and machinery, TJ1-1570

File Description: electronic resource

Relation: https://www.mdpi.com/2072-666X/14/11/2003; https://doaj.org/toc/2072-666X

Access URL: https://doaj.org/article/0eccec5192274954943be32aa88dfb32

Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity

Authors: Kim, K., Hwang, S., Yu, H., Choi, Y., Yoon, Y., Bolotnikov, A.E., James, R.B.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 65(8):2333-2337 Aug, 2018

Development of High-Quality FBAR Devices for Wireless Applications Employing Two-Step Annealing Treatments

Authors: Lee, E., Mai, L., Yoon, G.

Source: IEEE Microwave and Wireless Components Letters IEEE Microw. Wireless Compon. Lett. Microwave and Wireless Components Letters, IEEE. 21(11):604-606 Nov, 2011

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Authors: Chia-Hsun Hsu, Yun-Shao Cho, Wan-Yu Wu, Shui-Yang Lien, Xiao-Ying Zhang, Wen-Zhang Zhu, Sam Zhang, Song-Yan Chen

Source: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-10 (2019)

Subject Terms: Passivated emitter and rear cell, Aluminum oxide, Atomic layer deposition, Passivation, Two-step annealing, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-019-2969-z; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

Access URL: https://doaj.org/article/dfdf84826a70499da18f8465022c6490

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