Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy/sub 2/O/sub 3/) into HfO/sub 2/ n-MOSFETs

Authors: Tackhwi Lee, Se Jong Rhee, Chang Yong Kang, Feng Zhu, Hyoung-sub Kim, Changhwan Choi, Ok, I., Manhong Zhang, Krishnan, S., Thareja, G., Lee, J.C.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 27(8):640-643 Aug, 2006

High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode

Authors: Thareja, G., Chopra, S., Adams, B., Kim, Y., Moffatt, S., Saraswat, K., Nishi, Y.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(7):838-840 Jul, 2011

Electrical Characteristics of Germanium $\hbox{n}^{+}/ \hbox{p}$ Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb

Authors: Thareja, G., Cheng, S.-L., Kamins, T., Saraswat, K., Nishi, Y.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(5):608-610 May, 2011

High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts

Authors: Feng, J., Thareja, G., Kobayashi, M., Chen, S., Poon, A., Bai, Y., Griffin, P. B., Wong, S. S., Nishi, Y., Plummer, J. D.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(7):805-807 Jul, 2008

Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation

Authors: InJo Ok, Kim, H., Zhang, M., Lee, T., Zhu, F., Thareja, G., Yu, L., Koveshnikov, S., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S., Lee, J.C.

Source: 2006 64th Device Research Conference Device Research Conference, 2006 64th. :45-46 Jun, 2006

Relation: 2006 64th Device Research Conference

Germanium Passivation for High-k Dielectric III-V MOSFETs and Temperature Dependence of Dielectric Leakage Current

Authors: Hyoung-Sub Kim, Ok, I., Zhang, M., Lee, T., Zhu, F., Thareja, G., Yu, L., Koveshnikov, S., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S., Lee, J.C.

Source: 2006 64th Device Research Conference Device Research Conference, 2006 64th. :87-88 Jun, 2006

Relation: 2006 64th Device Research Conference

Low work-function TaN-metal gate with Gadolinium oxide buffer layer on Hf-based dielectrics

Authors: Thareja, G., Se Jong Rhee, Huang-Chun Wen, Harris, R., Majhi, P., Byoung Hun Lee, Lee, J.C.

Source: 2006 64th Device Research Conference Device Research Conference, 2006 64th. :93-94 Jun, 2006

Relation: 2006 64th Device Research Conference

Improving carrier mobility and reliability characteristics of high-k NMOSFET by using stacked Y2O3/HfO2 gate dielectric

Authors: Feng Zhu, Kang, C.Y., Rhee, S.J., Choi, C.H., Krishnan, S.A., Zhang, M., Kim, H.S., Lee, T., Ok, I., Thareja, G., Lee, J.C.

Source: 2006 IEEE International Reliability Physics Symposium Proceedings Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International. :659-660 Mar, 2006

Relation: 2006 IEEE International Reliability Physics Symposium Proceedings

NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics

Authors: Thareja, G., Wen, H.C., Harris, R., Majhi, P., Lee, B.H., Lee, J.C.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 27(10):802-804 Oct, 2006

Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer

Authors: Ok, I., Hyoung-sub Kim, Manhong Zhang, Chang-Yong Kang, Se Jong Rhee, Changhwan Choi, Krishnan, S.A., Tackhwi Lee, Feng Zhu, Thareja, G., Lee, J.C.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 27(3):145-147 Mar, 2006

Ultra shallow junctions with high dopant activation and GeO2 interfacial layer for gate dielectric in germanium MOSFETs

Authors: Thareja, G., Chopra, S., Adams, B., Patil, N., Ta, Y., Porshnev, P., Kim, Y., Moffatt, S., Loftis, D., Brennan, R., Goodman, G., Abdelrehim, I., Saraswat, K., Nishi, Y.

Source: 68th Device Research Conference Device Research Conference (DRC), 2010. :23-24 Jun, 2010

Relation: 2010 68th Annual Device Research Conference (DRC)

High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3

Authors: Thareja, G., Liang, J., Chopra, S., Adams, B., Patil, N., Cheng, S.-L., Nainani, A., Tasyurek, E., Kim, Y., Moffatt, S., Brennan, R., McVittie, J., Kamins, T., Saraswat, K., Nishi, Y.

Source: 2010 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2010 IEEE International. :10.5.1-10.5.4 Dec, 2010

Relation: 2010 IEEE International Electron Devices Meeting (IEDM)

Evaluating the Impact of a Population-targeted, University-led Health and Nutrition Education Program in a Low-income Housing Complex in Northern Colorado

Authors: Bargas, T., Sandha, P., Thareja, G.

Source: In Journal of the Academy of Nutrition and Dietetics October 2024 124(10) Supplement:A101-A101

Leptin in Association With Common Variants of MC3R Mediates Hypertension

Authors: Alsmadi, O., Melhem, M., Hebbar, P., Thareja, G., John, S. E., Alkayal, F., Behbehani, K., Thanaraj, T. A.

Source: AMERICAN JOURNAL OF HYPERTENSION. 27(7):973-981

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN374600107&indx=1&recIds=ETOCRN374600107

Structural Advantage for the EOT Scaling and Improved Electron Channel Mobility by Incorporating Dysprosium Oxide (Dy~2O~3) Into HfO~2 n-MOSFETs

Authors: Lee, T., Rhee, S. J., Kang, C. Y., Zhu, F., Kim, H., Choi, C., Ok, I., Zhang, M., Krishnan, S., Thareja, G.

Source: IEEE ELECTRON DEVICE LETTERS. 27(8):640-643

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN196075158&indx=1&recIds=ETOCRN196075158

High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for Formula Not Shown Junction Diode

Authors: Thareja, G., Chopra, S., Adams, B., Kim, Y., Moffatt, S., Saraswat, K., Nishi, Y.

Source: IEEE ELECTRON DEVICE LETTERS. 32(7):838-840

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN293921657&indx=1&recIds=ETOCRN293921657

Electrical Characteristics of Germanium Formula Not Shown Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb

Authors: Thareja, G., Cheng, S. L., Kamins, T., Saraswat, K., Nishi, Y.

Source: IEEE ELECTRON DEVICE LETTERS. 32(5):608-610

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN290371476&indx=1&recIds=ETOCRN290371476

High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD Al~2O~3 Gate Dielectric and Self-Aligned NiGe Contacts

Authors: Feng, J., Thareja, G., Kobayashi, M., Chen, S., Poon, A., Bai, Y., Griffin, P.B., Wong, S.S., Nishi, Y., Plummer, J.D.

Source: IEEE ELECTRON DEVICE LETTERS. 29(7):805-807

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN232421836&indx=1&recIds=ETOCRN232421836

NBTI Reliability of Strained SOI MOSFETs

Authors: Thareja, G., Lee, J., Thean, A. V.-Y., Vartanian, V., Nguyen, B.-Y.

Source: INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS. 32:423-425

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN199248271&indx=1&recIds=ETOCRN199248271

Metal Gate-HfO~2 MOS Structures on GaAs Substrate With and Without Si Interlayer

Authors: Ok, I., Kim, H.-S., Zhang, M., Kang, C.-Y., Rhee, S. J., Choi, C., Krishnan, S. A., Lee, T., Zhu, F., Thareja, G.

Source: IEEE ELECTRON DEVICE LETTERS. 27(3):145-147

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN186212214&indx=1&recIds=ETOCRN186212214