An SRAM SEU Cross Section Curve Physics Model

Authors: Kobayashi, D., Hirose, K., Sakamoto, K., Tsuchiya, Y., Okamoto, S., Baba, S., Shindou, H., Kawasaki, O., Makino, T., Ohshima, T.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 69(3):232-240 Mar, 2022

Investigation of Buried-Well Potential Perturbation Effects on SEU in SOI DICE-Based Flip-Flop Under Proton Irradiation

Authors: Sakamoto, K., Baba, S., Kobayashi, D., Okamoto, S., Shindou, H., Kawasaki, O., Makino, T., Mori, Y., Matuura, D., Kusano, M., Narita, T., Ishii, S., Hirose, K.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(6):1222-1227 Jun, 2021

Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs

Authors: Nakada, Y., Kuboyama, S., Mizuta, E., Takeyama, A., Ohshima, T., Shindou, H.

Source: 2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2019 19th European Conference on. :1-4 Sep, 2019

Relation: 2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

Radiation Test Results in Newly Developed Super-Junction Power MOSFETs

Authors: Mizuta, E., Nakada, Y., Kuboyama, S., Inoue, M., Kumagai, Y., Tatemichi, S., Shiigi, T., Watashima, T., Shindou, H.

Source: 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2018 18th European Conference on. :1-6 Sep, 2018

Relation: 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID

Authors: Kobayashi, D., Hirose, K., Sakamoto, K., Okamoto, S., Baba, S., Shindou, H., Kawasaki, O., Makino, T., Ohshima, T., Mori, Y., Matsuura, D., Kusano, M., Narita, T., Ishii, S.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 67(1):328-335 Jan, 2020

Physical Analysis of Damage Sites Introduced by SEGR in Silicon Vertical Power MOSFETs and Implications for Postirradiation Gate-Stress Test

Authors: Kuboyama, S., Mizuta, E., Nakada, Y., Shindou, H.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 66(7):1710-1714 Jul, 2019

Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions

Authors: Kuboyama, S., Mizuta, E., Nakada, Y., Shindou, H., Michez, A., Boch, J., Saigne, F., Touboul, A.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 66(7):1688-1693 Jul, 2019

Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array

Authors: Takeuchi, K., Sakamoto, T., Tada, M., Takeyama, A., Ohshima, T., Kuboyama, S., Shindou, H.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 66(7):1355-1360 Jul, 2019

Comparative evaluation of SnO2/CdS/CuBi2O4 structure performance based on SnO2 window layer numerical and experimental analysis

Authors: Lachhab, Saad Eddin, Bliya, A., Diyagh, H., En-nkhili, H., Shindou, H., Ouhssain, S., Slimane, H., Al Ibrahmi, E., Dlimi, L.

Source: In Journal of the Indian Chemical Society October 2022 99(10)

Radiation hardness-by-design SRAM design for 0.15µm fully depleted SOI-ASIC

Authors: Makihara, A., Yokose, T., Tsuchiya, Y., Miyazaki, Y., Ebihara, T., Maru, A., Shindou, H., Kuboyama, S.

Source: 2011 12th European Conference on Radiation and Its Effects on Components and Systems Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on. :164-168 Sep, 2011

Relation: 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

Total Ionizing dose and single event effects test results of a Radiation Hardness-by-Design Library for 0.15μm fully depleted SOI-AISC

Authors: Makihara, A., Ebihara, T., Yokose, T., Tsuchiya, Y., Miyazaki, Y., Satoh, Y., Shindou, H., Kuboyama, S.

Source: 2009 European Conference on Radiation and Its Effects on Components and Systems Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on. :602-605 Sep, 2009

Relation: 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

Applicability of Redundant Pairs of SOI Transistors for Analog Circuits and Their Applications to Phase-Locked Loop Circuits

Authors: Makihara, A., Yokose, T., Tsuchiya, Y., Miyazaki, Y., Abe, H., Shindou, H., Ebihara, T., Maru, A., Morikawa, K., Kuboyama, S., Tamura, T.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 60(1):230-235 Feb, 2013

DSP measurement of dielectric property of polymeric materials using interdigital electrodes

Authors: Shindou, H., Tokoro, T., Kosaki, M.

Source: 2000 Annual Report Conference on Electrical Insulation and Dielectric Phenomena (Cat. No.00CH37132) Electrical insulation and dielectric phenomena Electrical Insulation and Dielectric Phenomena, 2000 Annual Report Conference on. 2:600-603 vol.2 2000

Relation: 2000 Annual Report Conference on Electrical Insulation and Dielectric Phenomena

Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

Authors: Kuboyama, S., Maru, A., Shindou, H., Ikeda, N., Hirao, T., Abe, H., Tamura, T.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 58(6):2734-2738 Dec, 2011

DICE-Based Flip-Flop With SET Pulse Discriminator on a 90 nm Bulk CMOS Process

Authors: Maru, A., Shindou, H., Ebihara, T., Makihara, A., Hirao, T., Kuboyama, S.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 57(6):3602-3608 Dec, 2010

Relationship between single-event upset immunity and fabrication processes of recent memories

Authors: Nemoto, N., Shindou, H., Kuboyama, S., Itoh, H., Matsuda, S., Okada, S., Nashiyama, I.

Source: 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Radiation and its effects on components and systems Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on. :193-197 1999

Relation: 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99

New SET Characterization Technique Using SPICE for Fully Depleted CMOS/SOI Digital Circuitry

Authors: Makihara, A., Ebihara, T., Yokose, T., Tsuchiya, Y., Amano, Y., Shindou, H., Imagawa, R., Takahashi, Y., Kuboyama, S.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 55(6):2921-2927 Dec, 2008

Evaluation of the Proton Induced Bulk Damage in SDRAM Utilizing 90 nm Process Technology

Authors: Shindou, H., Kuboyama, S., Ikeda, N., Satoh, Y., Hirao, T., Tamura, T.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 54(6):2233-2237 Dec, 2007

Optimization for SEU/SET Immunity on 0.15 $\mu$m Fully Depleted CMOS/SOI Digital Logic Devices

Authors: Makihara, A., Yamaguchi, T., Asai, H., Tsuchiya, Y., Amano, Y., Midorikawa, M., Shindou, H., Onoda, S., Hirao, T., Nakajima, Y., Takahashi, Y., Ohnishi, K., Kuboyama, S.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 53(6):3422-3427 Dec, 2006

Hardness-by-design approach for 0.15 /spl mu/m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

Authors: Makihara, A., Midorikawa, M., Yamaguchi, T., Iide, Y., Yokose, T., Tsuchiya, Y., Arimitsu, T., Asai, H., Shindou, H., Kuboyama, S., Matsuda, S.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 52(6):2524-2530 Dec, 2005