Fungicide-tolerant persister formation during cryptococcal pulmonary infection

Authors: Ke, Weixin, Xie, Yuyan, Chen, Yingying, Ding, Hao, Ye, Leixin, Qiu, Haoning, Li, Hao, Zhang, Lanyue, Chen, Lei, Tian, Xiuyun, Shen, Zhenghao, Song, Zili, Fan, Xin, Zong, Jian-Fa, Guo, Zhengyan, Ma, Xiaoyu, Xiao, Meng, Liao, Guojian, Liu, Cui Hua, Yin, Wen-bing, Dong, Zhiyang, Yang, Feng, Jiang, Yuan-ying, Perlin, David S., Chen, Yihua, Fu, Yu V, Wang, Linqi

Source: In Cell Host & Microbe 14 February 2024 32(2):276-289

High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel

Authors: Yu, Xinxin, Gong, Hehe, Zhou, Jianjun, Shen, Zhenghao, Xu, Wenhui, You, Tiangui, Wang, Jian, Zhang, Shengnan, Wang, Yingmin, Zhang, Kai, Tao, Ran, Wu, Yun, Ren, Fang-Fang, Ou, Xin, Kong, Yuechan, Li, Zhonghui, Chen, Tangsheng, Chen, Dunjun, Gu, Shulin, Zheng, Youdou, Ye, Jiandong, Zhang, Rong

Source: IEEE electron device letters. 44(7):1060-1063

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100186367760.0x000001&indx=1&recIds=ETOCvdc_100186367760.0x000001

Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes

Authors: Qu, Zhenyu, Xu, Wenhui, You, Tiangui, Shen, Zhenghao, Zhao, Tiancheng, Huang, Kai, Yi, Ailun, Zhang, David Wei, Han, Genquan, Ou, Xin, Hao, Yue

Source: IEEE journal of the Electron Devices Society. 11:135-140

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100179383619.0x000001&indx=1&recIds=ETOCvdc_100179383619.0x000001

The effect of oxygen annealing on characteristics of β-Ga2O3 solar-blind photodetectors on SiC substrate by ion-cutting process

Authors: Shen, Zhenghao, Xu, Wenhui, Xu, Yang, Huang, Hao, Lin, Jiajie, You, Tiangui, Ye, Jiandong, Ou, Xin

Source: In Journal of Alloys and Compounds 31 December 2021 889

Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC

Authors: Xu, Wenhui, You, Tiangui, Wang, Yibo, Shen, Zhenghao, Liu, Kang, Zhang, Lianghui, Sun, Huarui, Qian, Ruijie, An, Zhenghua, Mu, Fengwen, Suga, Tadatomo, Han, Genquan, Ou, Xin, Hao, Yue, Wang, Xi

Source: In Fundamental Research November 2021 1(6):691-696

Blister formation in He-H co-implanted InP: A comprehensive atomistic study

Authors: Daghbouj, N., Lin, Jiajie, Sen, H.S., Callisti, M., Li, Bingsheng, Karlik, M., Polcar, T., Shen, Zhenghao, Zhou, Min, You, Tiangui, Ou, Xin

Source: In Applied Surface Science 30 June 2021 552

Current Kink Effect in β-Ga₂O₃ MOSFETs Induced by Incomplete Ionization of Donors

Authors: Yu, Xinxin, Gong, Hehe, Zhou, Jianjun, Shen, Zhenghao, Ren, Fangfang, Chen, Dunjun, Ou, Xin, Gu, Shulin, Kong, Yuechan, Li, Zhonghui, Chen, Tangsheng, Zhang, Rong, Zheng, Youdou, Ye, Jiandong

Source: IEEE Transactions on Electron Devices; October 2024, Vol. 71 Issue: 10 p5908-5913, 6p

Pan-omics-based characterization and prediction of highly multidrug-adapted strains from an outbreak fungal species complex

Authors: Fan, Xin, Chen, Lei, Chen, Min, Zhang, Na, Chang, Hong, He, Mingjie, Shen, Zhenghao, Zhang, Lanyue, Ding, Hao, Xie, Yuyan, Huang, Yemei, Ke, Weixin, Xiao, Meng, Zang, Xuelei, Xu, Heping, Fang, Wenxia, Li, Shaojie, Cao, Cunwei, Xu, Yingchun, Shan, Shiguang, Wu, Wenjuan, Chen, Changbin, Xue, Xinying, Wang, Linqi

Source: In The Innovation 9 September 2024 5(5)

Bismuth-Related Nanostructures

Authors: Wang, Lijuan, Liang, Hao, Shen, Zhenghao, Wang, Shumin

Source: Springer series in materials science. 285:181-200

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN620822575&indx=1&recIds=ETOCRN620822575

Molecular Beam Epitaxy Growth and Properties of GaAsBi and AlAsBi

Authors: Yue, Li, Zhang, Xiaolei, Ou, Weiwen, Shen, Zhenghao, Wang, Shumin

Source: Springer series in materials science. 285:11-36

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN620822514&indx=1&recIds=ETOCRN620822514

RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs

Authors: Yu, Xinxin, Gong, Hehe, Zhou, Jianjun, Shen, Zhenghao, Ren, Fang-fang, Chen, Dunjun, Ou, Xin, Kong, Yuechan, Li, Zhonghui, Chen, Tangsheng, Gu, Shulin, Zhang, Rong, Zheng, Youdou, Ye, Jiandong

Source: Applied physics letters. 121(7)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100158408691.0x000001&indx=1&recIds=ETOCvdc_100158408691.0x000001

Three-dimensional thermal analysis of heterogeneously integrated β-Ga2O3-on-SiC SBDs using Raman thermography and electrothermal modeling.

Authors: Xie, Yinfei¹, Xu, Wenhui², He, Yang¹, Shen, Zhenghao², Qu, Zhenyu², You, Tiangui², Ou, Xin², ouxin@mail.sim.ac.cn, Sun, Huarui¹, huarui.sun@hit.edu.cn

Source: Applied Physics Letters; 6/17/2024, Vol. 124 Issue 25, p1-7, 7p

Three-dimensional thermal analysis of heterogeneously integrated β-Ga2O3-on-SiC SBDs using Raman thermography and electrothermal modeling.

Authors: Xie, Yinfei, Xu, Wenhui, He, Yang, Shen, Zhenghao, Qu, Zhenyu, You, Tiangui, Ou, Xin, Sun, Huarui

Source: Applied Physics Letters; 6/17/2024, Vol. 124 Issue 25, p1-7, 7p

Subject Terms: SCHOTTKY barrier diodes, THERMOGRAPHY, THERMAL analysis, THERMAL conductivity, TEMPERATURE distribution, DEPTH profiling

Effect of Particle Size of Abrasive on Sapphire Wafer Polishing Process

Authors: Zhang, Liping, Miao, Rulin, Shen, Zhenghao, Guo, Li, Chen, Qingmin, Lin, Hai, Li, Chun, Li, Jianxun, Zeng, Fanming, Liu, Jinghe

Source: Guisuanyan xuebao. 46(1):59-63

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN615173460&indx=1&recIds=ETOCRN615173460

Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface.

Authors: Xu, Wenhui¹ (AUTHOR), Shen, Zhenghao¹ (AUTHOR), Qu, Zhenyu^1,2 (AUTHOR), Zhao, Tiancheng^1,2 (AUTHOR), Yi, Ailun¹ (AUTHOR), You, Tiangui^1,2 (AUTHOR) t.you@mail.sim.ac.cn, Han, Genquan³ (AUTHOR), Ou, Xin^1,2 (AUTHOR) ouxin@mail.sim.ac.cn

Source: Applied Physics Letters. 3/11/2024, Vol. 124 Issue 11, p1-7. 7p.

Subject Terms: *SCHOTTKY barrier diodes, *ATOMIC structure, *POWER electronics, *CARRIER density, *ANTISITE defects, *ELECTRIC fields

Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface.

Authors: Xu, Wenhui¹, Shen, Zhenghao¹, Qu, Zhenyu^1,2, Zhao, Tiancheng^1,2, Yi, Ailun¹, You, Tiangui^1,2, t.you@mail.sim.ac.cn, Han, Genquan³, Ou, Xin^1,2, ouxin@mail.sim.ac.cn

Source: Applied Physics Letters; 3/11/2024, Vol. 124 Issue 11, p1-7, 7p

Heterointegrated Ga2O3-on-SiC RF MOSFETs With f T/f max of 47/51 GHz by Ion-Cutting Process

Authors: Yu, Xinxin, Xu, Wenhui, Wang, Yibo, Qiao, Bing, Shen, Rui, Zhou, Jianjun, Li, Zhonghui, You, Tiangui, Shen, Zhenghao, Zhang, Kai, Ren, Fang-Fang, Tang, Dongming, Ou, Xin, Han, Genquan, Kong, Yuechan, Chen, Tangsheng, Gu, Shulin, Zheng, Youdou, Ye, Jiandong, Zhang, Rong

Source: IEEE Electron Device Letters; December 2023, Vol. 44 Issue: 12 p1951-1954, 4p

Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures.

Alternate Title: 高温亲水性键合结合离子束剥离技术制备晶圆级β-Ga2O3/SiC异质集成材料. (Chinese)

Authors: Shen, Zhenghao, Xu, Wenhui, Chen, Yang, Lin, Jiajie, Xie, Yuhuan, Huang, Kai, You, Tiangui, Han, Genquan, Ou, Xin

Source: Science China Materials; Feb2023, Vol. 66 Issue 2, p756-763, 8p

Regulatory basis for reproductive flexibility in a meningitis-causing fungal pathogen.

Authors: Hu, Pengjie, Ding, Hao, Liu, Huimin, Yang, Yulin, Chen, Lei, He, Guang-Jun, Ke, Weixin, Zhu, Ping, Tian, Xiuyun, Peng, Yan, Shen, Zhenghao, Yao, Xiaoxia, Tao, Changyu, Yang, Ence, Liao, Guojian, Liu, Xiao, Wang, Linqi

Source: Nature Communications; 12/24/2022, Vol. 13 Issue 1, p1-19, 19p

Subject Terms: SEXUAL cycle, CRYPTOCOCCUS neoformans, PATHOGENIC fungi, NEUROSPORA crassa, TRANSCRIPTION factors

High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel

Authors: Yu, Xinxin, Gong, Hehe, Zhou, Jianjun, Shen, Zhenghao, Xu, Wenhui, You, Tiangui, Wang, Jian, Zhang, Shengnan, Wang, Yingmin, Zhang, Kai, Tao, Ran, Wu, Yun, Ren, Fang-Fang, Ou, Xin, Kong, Yuechan, Li, Zhonghui, Chen, Tangsheng, Chen, Dunjun, Gu, Shulin, Zheng, Youdou, Ye, Jiandong, Zhang, Rong

Source: IEEE Electron Device Letters; 2023, Vol. 44 Issue: 7 p1060-1063, 4p