Unraveling the origins of ferroelectricity in doped hafnia through carrier-mediated phase transitions

Authors: Gang Li, Shaoan Yan, Yulin Liu, Wanli Zhang, Yongguang Xiao, Qiong Yang, Minghua Tang, Jiangyu Li, Zhilin Long

Source: npj Computational Materials, Vol 11, Iss 1, Pp 1-11 (2025)

Subject Terms: Materials of engineering and construction. Mechanics of materials, TA401-492, Computer software, QA76.75-76.765

File Description: electronic resource

Relation: https://doaj.org/toc/2057-3960

Access URL: https://doaj.org/article/3b58cb61496c4909865fd13741d1328c

Artificial intelligence-driven phase stability evaluation and new dopants identification of hafnium oxide-based ferroelectric materials

Authors: Shaoan Yan, Pei Xu, Gang Li, Yuchun Li, Yingfang Zhu, Xiaona Zhu, Qiong Yang, Meng Li, Minghua Tang, Hongliang Lu, Sen Liu, Qingjiang Li, David Wei Zhang, Zhigang Chen

Source: npj Computational Materials, Vol 11, Iss 1, Pp 1-14 (2025)

Subject Terms: Materials of engineering and construction. Mechanics of materials, TA401-492, Computer software, QA76.75-76.765

File Description: electronic resource

Relation: https://doaj.org/toc/2057-3960

Access URL: https://doaj.org/article/02cf5e79437d4091bc824f7741720d8b

Phase transition mechanism and property prediction of hafnium oxide-based antiferroelectric materials revealed by artificial intelligence

Authors: Shaoan Yan, Pei Xu, Gang Li, Yingfang Zhu, Yujie Wu, Qilai Chen, Sen Liu, Qingjiang Li, Minghua Tang

Source: Journal of Materiomics, Vol 11, Iss 4, Pp 100968- (2025)

Subject Terms: Antiferroelectric materials, Machine learning, Critical electric field, First-principle calculations, Phase transition, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2352847824002077; https://doaj.org/toc/2352-8478

Access URL: https://doaj.org/article/df3b4e6b42124e15b36f76740fcdde26

Impact of Radiation Effect on Ferroelectric Al-Doped HfO2 Metal-Ferroelectric- Insulator-Semiconductor Structure

Authors: Wanli Zhang, Guangzhao Wang, Minghua Tang, Lian Cui, Teng Wang, Pengyu Su, Zhuojun Chen, Xiaojiang Long, Yongguang Xiao, Shaoan Yan

Source: IEEE Access, Vol 8, Pp 108121-108126 (2020)

Subject Terms: Metal-ferroelectric-insulator-semiconductor (MFIS), Hafnium Aluminium Oxide (HfAlO), remnant polarization, γ-ray radiation, ferroelectric memory, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

File Description: electronic resource

Relation: https://ieeexplore.ieee.org/document/9110854/; https://doaj.org/toc/2169-3536

Access URL: https://doaj.org/article/66ed3bdaba884e77b714abe9136461dc

Effect of orientation on polarization switching and fatigue of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films at both low and elevated temperatures

Authors: Wanli Zhang, Yanhu Mao, Shaoan Yan, Minghua Tang, Yongguang Xiao, Suihu Dang, Wenxi Zhao, Guangzhao Wang

Source: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)

Subject Terms: Polarization switching, BNTM, Domain pinning, Temperature-dependent fatigue, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-019-2949-3; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

Access URL: https://doaj.org/article/e2ecad48ec814316ba8cd4247adda959

Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfOx-Based Memristive Devices

Authors: Dong Wang, Shaoan Yan, Qilai Chen, Qiming He, Yongguang Xiao, Minghua Tang, Xuejun Zheng

Source: Nanomaterials, Vol 9, Iss 10, p 1355 (2019)

Subject Terms: resistive switching, HfOx, oxygen plasma treatment, oxygen ions migration, oxygen vacancy, Chemistry, QD1-999

File Description: electronic resource

Relation: https://www.mdpi.com/2079-4991/9/10/1355; https://doaj.org/toc/2079-4991

Access URL: https://doaj.org/article/a781a3a7a3aa47edbfa99dcd2940308a

A novel methodology of layout design by applying euler path.

Authors: Shaoan Yan, Dongen Li, Liming Wang, Yongguang Xiao, Minghua Tang

Source: 2010 10th IEEE International Conference on Solid-State & Integrated Circuit Technology (ICSICT); 2010, p818-820, 3p

Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor.

Authors: Shaoan Yan, Gang Li, Hongxia Guo, Wen Zhao, Ying Xiong, Minghua Tang, Zheng Li, Yongguang Xiao, Wanli Zhang, Zhifeng Lei

Source: Japanese Journal of Applied Physics; Apr2016, Vol. 55 Issue 4, p1-1, 1p