Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors.

Authors: Hu, Yaoqiao¹, Cho, Kyeongjae¹, kjcho@utdallas.edu

Source: Journal of Applied Physics; 7/7/2024, Vol. 136 Issue 1, p1-12, 12p

The Chiplet Revolution.

Authors: Mone, Gregory¹ (AUTHOR) gmmone@gmail.com

Source: Communications of the ACM. Nov2024, Vol. 67 Issue 11, p14-16. 3p.

Subject Terms: *Integrated circuits, *Technological innovations, Semiconductors, Semiconductor design, Moore's law, Forecasting technological innovation

Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels.

Authors: Huang, Yuanchao^1,2, Wang, Rong², Yang, Deren^1,2, Pi, Xiaodong^1,2, xdpi@zju.edu.cn

Source: Journal of Applied Physics; 5/21/2024, Vol. 135 Issue 19, p1-10, 10p

Impedance characterization of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene diodes: Addressing dielectric properties and trap effects.

Authors: Cho, Hong-rae¹, Hyung Park, Joon¹, Kim, Somi¹, sungyeop.jung@snu.ac.kr, Udaya Mohanan, Kannan¹, Jung, Sungyeop², chang-hyun.kim@uottawa.ca, Kim, Chang-Hyun³

Source: Journal of Applied Physics; 5/7/2024, Vol. 135 Issue 17, p1-8, 8p

The Effect of Area Density of Polysilicon Thermocouples on Thermoelectric Performance.

Authors: Yang, Shih-Ming¹ (AUTHOR) smyang@mail.ncku.edu.tw, Lai, Zen-Wen¹ (AUTHOR), Liu, Ai-Lin¹ (AUTHOR)

Source: Sensors (14248220). Feb2025, Vol. 25 Issue 4, p1098. 12p.

Subject Terms: *COMPLEMENTARY metal oxide semiconductors, *BODY temperature, *ELECTROPHYSIOLOGY, *THERMOCOUPLES, *SEMICONDUCTORS

Raman and x-ray diffraction data analysis of Ge2Sb2Te5 films using gaussian approximation considering the temperature population factor.

Authors: Garibova, S. N.^1,2 sqaribova1@gmail.com, Isayev, A. I.¹, Rzayeva, S. A.¹, Mammadov, F. N.³

Source: Chalcogenide Letters. Jan2025, Vol. 22 Issue 1, p1-9. 9p.

Subject Terms: *SEMICONDUCTORS, *SUBSTRATES (Materials science), *AMORPHOUS semiconductors, *DISLOCATION structure, *RAMAN scattering

Advances in n-type crystalline oxide channel layers for thin-film transistors: materials, fabrication techniques, and device performance.

Authors: Kim, Gwang-Bok¹, Choi, Cheol Hee¹, Hur, Jae Seok¹, Ahn, Jinho², jhahn@hanyang.ac.kr, Jeong, Jae Kyeong¹, jkjeong1@hanyang.ac.kr

Source: Journal of Physics D: Applied Physics; 1/6/2025, Vol. 58 Issue 1, p1-16, 16p

Oxide semiconductors for thermoelectric: The challenges and future.

Authors: Ge, Bangzhi¹, Li, Ruoyan¹, Wang, Guohao¹, Zhu, Menghua¹, mhzhu@nwpu.edu.cn, Zhou, Chongjian¹, cjzhou@nwpu.edu.cn

Source: Journal of the American Ceramic Society; Mar2024, Vol. 107 Issue 3, p1985-1995, 11p

Effect of Cu Doping on Structural, Optical, and Electrical Properties of Sn2S3 Thin Films Prepared by Spray Pyrolysis.

Authors: Nagaraja, B. S.¹, Girija, K. P.², Mahendra, K.³, manukolya@gmail.com, Pattar, Jayadev³, jayadev.pattar@gmail.com, Gurumurthy, S. C.⁴, Ravikirana⁵, Rao, Ashok⁶, Shyam Prasad, K.¹

Source: JOM: The Journal of The Minerals, Metals & Materials Society (TMS); Feb2024, Vol. 76 Issue 2, p635-645, 11p

MarketLine Company Profile: NXP Semiconductors N.V.

Source: NXP Semiconductors N.V. MarketLine Company Profile. 10/28/2024, p1-49. 49p.

Subject Terms: *Semiconductor industry

Geographic Terms: Eindhoven (Netherlands)

Company/Entity: NXP Semiconductors NV

Broadcom Inc SWOT Analysis.

Source: Broadcom Inc SWOT Analysis. 10/30/2024, p1-8. 8p.

Subject Terms: *Semiconductor industry, Complementary metal oxide semiconductors

Design of Electronic Nose Based on MOS Gas Sensors and Its Application in Juice Identification.

Authors: Zhang, Yafei¹ (AUTHOR), Zhao, Yongli¹ (AUTHOR) zyl@sues.edu.cn, Jiang, Feiyang¹ (AUTHOR), Lai, Rongjie¹ (AUTHOR)

Source: Sensors (14248220). Feb2025, Vol. 25 Issue 4, p1205. 16p.

Subject Terms: *METAL oxide semiconductors, *GAS detectors, *GAS well drilling, *ELECTRONIC systems, *FEATURE extraction, *ELECTRONIC noses

A Compact Low-Power Chopper Low Noise Amplifier for High Density Neural Front-Ends.

Authors: Fava, Alessandro¹ (AUTHOR), Centurelli, Francesco¹ (AUTHOR), Monsurrò, Pietro¹ (AUTHOR), Scotti, Giuseppe¹ (AUTHOR) giuseppe.scotti@uniroma1.it

Source: Sensors (14248220). Feb2025, Vol. 25 Issue 4, p1157. 20p.

Subject Terms: *PINK noise, *COMPLEMENTARY metal oxide semiconductors, *NOISE, *PIXELS, *MULTIPLEXING, *ELECTRODES

A Complementary Metal-Oxide-Semiconductor Optoelectronic Analog Front-End Preamplifier with Cross-Coupled Active Loads for Short-Range LiDARs.

Authors: Song, Yunji^1,2 (AUTHOR), Choi, Yejin^1,2 (AUTHOR), Jung, Dukyoo³ (AUTHOR), Choi, Seonhan^1,2 (AUTHOR), Park, Sung-Min^1,2 (AUTHOR) smpark@ewha.ac.kr

Source: Sensors (14248220). Feb2025, Vol. 25 Issue 4, p1040. 13p.

Subject Terms: *COMPLEMENTARY metal oxide semiconductors, *SPECTRAL energy distribution, *POWER resources, *PREAMPLIFIERS, *DENSITY currents

A Method for Grading Failure Rates Within the Dynamic Effective Space of Integrated Circuits After Testing.

Authors: Zhan, Wenfa¹, zhanwf@aqnu.edu.cn, Zhou, Yangxinzi¹, 080010@aqnu.edu.cnzyxz_22@foxmail.com, Zheng, Jiangyun¹, cai_welcome@163.com, Cai, Xueyuan¹, ttzgyrsflh@aliyun.com, Zhang, Qingping¹, Wen, Xiaoqing², wen@cse.kyutech.ac.jp

Source: Applied Sciences (2076-3417); Feb2025, Vol. 15 Issue 4, p2009, 15p

Modeling carrier trapping at semiconductor/dielectric interfaces based on first-principles calculations of nonradiative capture.

Authors: Shin, Yongjin¹, vandewalle@mrl.ucsb.edu, Turiansky, Mark E.², Wickramaratne, Darshana^1,3, Lee, Byounghak⁴, Van de Walle, Chris G.¹

Source: Journal of Applied Physics; 2/14/2025, Vol. 137 Issue 6, p1-13, 13p

Comprehensive thermal property measurement of semiconductor heterostructures using the square-pulsed source (SPS) method.

Authors: Song, Shangzhi¹ (AUTHOR), Chen, Tao¹ (AUTHOR), Jiang, Puqing¹ (AUTHOR) jpq2021@hust.edu.cn

Source: Journal of Applied Physics. 2/7/2025, Vol. 137 Issue 5, p1-11. 11p.

Subject Terms: *THERMAL conductivity, *WIDE gap semiconductors, *HEAT capacity, *THIN films, *THERMAL properties, *SEMICONDUCTOR devices

Effect of active layer thickness on device performance of InSnZnO thin-film transistors grown by atomic layer deposition.

Authors: Zhang, Yu¹ (AUTHOR), Luo, Binbin¹ (AUTHOR), Li, Runzhou¹ (AUTHOR), Wu, Xuefeng² (AUTHOR) xuefeng.wu@shnicic.com, Bai, Rongxu¹ (AUTHOR), Sun, Qingqing^1,3 (AUTHOR), Zhang, David W.^1,3 (AUTHOR), Hu, Shen^1,3 (AUTHOR) hushen@fudan.edu.cn, Ji, Li^1,3 (AUTHOR) lji@fudan.edu.cn

Source: Journal of Chemical Physics. 2/7/2025, Vol. 162 Issue 5, p1-11. 11p.

Subject Terms: *ATOMIC layer deposition, *AMORPHOUS semiconductors, *THRESHOLD voltage, *CARRIER density, *INDIUM gallium zinc oxide, *THIN films, *THIN film transistors

Spin–lattice relaxation mechanism of magnetic field effects on singlet fission in amorphous molecular semiconductors.

Authors: Shushin, A. I.¹ (AUTHOR) shushin@chph.ras.ru

Source: Journal of Chemical Physics. 2/7/2025, Vol. 162 Issue 5, p1-16. 16p.

Subject Terms: *MAGNETIC field effects, *AMORPHOUS semiconductors, *MAGNETIC fields, *MAGNETIC relaxation, *EXCITED states

Study of evolution for 3D structured surface with nano-balls and walls-like features with thickness variation for WO3 thin films made by spray deposition.

Authors: Suchea, Mirela Petruta^1,2 (AUTHOR) mira.suchea@imt.ro, Tudose, Ioan Valentin^2,3 (AUTHOR), Romanitan, Cosmin¹ (AUTHOR), Pachiu, Cristina¹ (AUTHOR), Popescu, Marian⁴ (AUTHOR), Mouratis, Kyriakos^2,5 (AUTHOR), Manica, Marina^1,6 (AUTHOR), Antohe, Stefan^6,7 (AUTHOR), Couris, Stelios⁸ (AUTHOR), Zisopol, Dragos Gabriel^9,10 (AUTHOR), Ionescu, Octavian Narcis^1,11 (AUTHOR) ionescu_o_ro@yahoo.com, Koudoumas, Emmanuel^1,2,5 (AUTHOR) koudoumas@hmu.gr

Source: Scientific Reports. 2/4/2025, Vol. 15 Issue 1, p1-18. 18p.

Subject Terms: *PHYSICAL & theoretical chemistry, *METAL oxide semiconductors, *THIN film devices, *FIELD emission electron microscopy, *THIN films, *TUNGSTEN trioxide