Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates

Authors: Apoorva Sood, Dong-Sing Wuu, Fu-Gow Tarntair, Ngo Thien Sao, Tian-Li Wu, Niall Tumilty, Hao-Chung Kuo, Singh Jitendra Pratap, Ray-Hua Horng

Source: Materials Today Advances, Vol 17, Iss , Pp 100346- (2023)

Subject Terms: Unintentionally doped (UID) β-Ga2O3 epilayers, Schottky barrier diodes (SBDs), Rapid thermal annealing (RTA), Atomic force microscopy (AFM), Schottky (S), Ohmic (O) contacts, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2590049823000061; https://doaj.org/toc/2590-0498

Access URL: https://doaj.org/article/6a918dff8a3345968b2ea1de2b4b5d98

High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology

Authors: Kim, S., Yokoyama, M., Nakane, R., Ichikawa, O., Osada, T., Hata, M., Takenaka, M., Takagi, S.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(10):3342-3350 Oct, 2013

Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Authors: Kim, S., Yokoyama, M., Taoka, N., Nakane, R., Yasuda, T., Ichikawa, O., Fukuhara, N., Hata, M., Takenaka, M., Takagi, S.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(8):2512-2517 Aug, 2013

Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

Authors: Shujuan Mao, Jianfeng Gao, Xiaobin He, Weibing Liu, Jinbiao Liu, Guilei Wang, Na Zhou, Yanna Luo, Lei Cao, Ran Zhang, Haochen Liu, Xun Li, Yongliang Li, Zhenhua Wu, Junfeng Li, Jun Luo, Chao Zhao, Wenwu Wang, Huaxiang Yin

Source: Nanomaterials, Vol 12, Iss 7, p 1218 (2022)

Subject Terms: 3D sequential integration, low thermal budget, Schottky S/D FinFETs, inverter, Chemistry, QD1-999

File Description: electronic resource

Relation: https://www.mdpi.com/2079-4991/12/7/1218; https://doaj.org/toc/2079-4991

Access URL: https://doaj.org/article/718ad3c0a2d44cbcb194c795c597a267

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