Growth of cubic InxGa1-xN over whole composition by MBE
Gallium Nitride Materials and Devices XVIII

Authors: Zscherp, M. F., Jentsch, S. A., Müller, M. J., Littmann, M., Meier, F., Hofmann, D. M., As, D. J., Chatterjee, S., Schörmann, J.

Source: Proceedings of SPIE, the International Society for Optical Engineering. 12421:124210B-124210B-6

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN900060557&indx=1&recIds=ETOCCN900060557

Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design

Authors: Schlichting, S., Hönig, G. M. O., Müßener, J., Hille, P., Grieb, T., Teubert, J., Schörmann, J., Wagner, M. R., Rosenauer, A., Eickhoff, M., Hoffmann, A., Callsen, G.

Subject Terms: Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics

Access URL: http://arxiv.org/abs/1707.06882

Ge doping of GaN beyond the Mott transition

Authors: Ajay, A., Schörmann, J., Jimenez-Rodriguez, M., Lim, C. B., Walther, F., Rohnke, M., Mouton, I., Amichi, L., Bougerol, C., Hertog, M. I. Den, Eickhoff, M., Monroy, E.

Source: Journal of Physics D: Applied Physics 49, 445301 (2016)

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/1604.00231

Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band

Authors: Lim, C. B., Ajay, A., Bougerol, C., Haas, B., Schörmann, J., Beeler, M., Lähnemann, J., Eickhoff, M., Monroy, E.

Source: Nanotechnology 26, 435201 (2015)

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/1506.00353

Long-lived excitons in GaN/AlN nanowire heterostructures

Authors: Beeler, M., Lim, C. B., Hille, P., Bleuse, J., Schörmann, J., de la Mata, M., Arbiol, J., Eickhoff, M., Monroy, E.

Source: Phys. Rev. B 91, 205440 (2015)

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics

Access URL: http://arxiv.org/abs/1412.7720

Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping

Authors: Hille, P., Müßener, J., Becker, P., de la Mata, M., Rosemann, N., Magén, C., Arbiol, J., Teubert, J., Chatterjee, S., Schörmann, J., Eickhoff, M.

Source: Appl. Phys. Lett. 104, 102104 (2014)

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/1402.3081

MBE growth of cubic AlxIn1-xN and AlxGayIn1-x-yN lattice matched to GaN

Authors: As, D. J., Schnietz, M., Schoermann, J., Potthast, S., Gerlach, J. W., Vogt, J., Lischka, K.

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/cond-mat/0702363

MBE Growth of Cubic InN

Authors: Schoermann, J., As, D. J., Lischka, K.

Source: MRS Symp. Proc. Vol. 955E, I8.3 (2007)

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/cond-mat/0702140

Room temperature green light emissions from nonpolar cubic InGaN/GaN multi quantum wells

Authors: Li, S. F., Schoermann, J., As, D. J., Lischka, K.

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/cond-mat/0702100

In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

Authors: Schoermann, J., Potthast, S., As, D. J., Lischka, K.

Source: Applied Physics letters, vol. 90, 041918 (2007)

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/cond-mat/0702018

Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer.

Authors: Karg, A.¹, karg@ifp.uni-bremen.de, Kracht, M.², Vogt, P.¹, Messow, A.¹, Braud, N.¹, Schörmann, J.², Rohnke, M.³, Janek, J.³, Falta, J.¹, Eickhoff, M.¹

Source: Journal of Applied Physics; 11/21/2022, Vol. 132 Issue 19, p1-9, 9p

Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer.

Authors: Karg, A., Kracht, M., Vogt, P., Messow, A., Braud, N., Schörmann, J., Rohnke, M., Janek, J., Falta, J., Eickhoff, M.

Source: Journal of Applied Physics; 11/21/2022, Vol. 132 Issue 19, p1-9, 9p

Subject Terms: MOLECULAR beam epitaxy, EPITAXY, CHEMICAL properties, TIN

InGaN/GaN nanowires as a new platform for photoelectrochemical sensors – detection of NADH

Authors: Riedel, M., Hölzel, S., Hille, P., Schörmann, J., Eickhoff, M., Lisdat, F.

Source: In Biosensors and Bioelectronics 15 August 2017 94:298-304

Suppression of the quantum-confined Stark effect in polar nitride heterostructures

Authors: Schlichting, S., Hönig, G., Müßener, J., Hille, P., Grieb, T., Westerkamp, S., Teubert, J., Schörmann, J., Wagner, M., Rosenauer, A., Eickhoff, M., Hoffmann, A., Callsen, G.

Source: Communications physics. 1(1):1-8

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100178108903.0x000001&indx=1&recIds=ETOCvdc_100178108903.0x000001

Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation

Authors: Kracht, M., Schörmann, J., Eickhoff, M.

Source: In Journal of Crystal Growth 15 February 2016 436:87-91

Influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN nanowires grown by plasma-assisted molecular beam epitaxy.

Authors: Hille, P.^1,2, Walther, F.^1,3, Klement, P.¹, Müßener, J.², Schörmann, J.¹, Joerg.Schoermann@exp1.physik.uni-giessen.de, Kaupe, J.¹, Mitić, S.¹, Rosemann, N. W.^1,4, Chatterjee, S.^1,4, Beyer, A.⁴, Gries, K. I.⁴, Volz, K.⁴, Eickhoff, M.¹

Source: Journal of Applied Physics; 2018, Vol. 124 Issue 16, pN.PAG-N.PAG, 9p, 1 Black and White Photograph, 1 Chart, 12 Graphs

Growth of cubic InxGa1-xN over whole composition by MBE

Authors: Fujioka, Hiroshi, Morkoç, Hadis, Schwarz, Ulrich T., Zscherp, M. F., Jentsch, S. A., Müller, M. J., Littmann, M., Meier, F., Hofmann, D. M., As, D. J., Chatterjee, S., Schörmann, J.

Source: Proceedings of SPIE; March 2023, Vol. 12421 Issue: 1 p124210B-124210B-6, 1117897p

Cubic InGaN/GaN multi-quantum wells and AlGaN/GaN distributed Bragg reflectors for application in resonant cavity LEDs

Authors: Li, Shunfeng, Schörmann, J., Pawlis, A., As, D.J., Lischka, K. ^⁎

Source: In Microelectronics Journal November 2005 36(11):963-968

Mass determination of single aerosol particles by optical interferometry.

Authors: Holländer, W., Schörmann, J.

Source: Atmospheric Environment (00046981); August 1974, Vol. 8, p817-822, 6p

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