A Study of On-state Breakdown Decreasing of nLDMOSFETs by Hole Current Increase Depending on Drain Pulse Rise Time

Authors: Mori, Takahiro, Yamaguchi, Tomonari, Kamino, Takeshi, Tsuruta, Junji, Okushima, Mototsugu, Sayama, Hirokazu, Iizuka, Koji

Source: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on. :30-33 Sep, 2020

Relation: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Experimental Study on the Effect of Recessed Gates in Drain STI Regions of nLDMOSFETs

Authors: Mori, Takahiro, Sayama, Hirokazu, Ipposhi, Takashi, Iizuka, Koji

Source: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2019 31st International Symposium on. :375-378 May, 2019

Relation: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Test tool for equivalence of access control list

Authors: Sayama, Hirokazu, Yoshiura, Noriaki

Source: 2012 14th Asia-Pacific Network Operations and Management Symposium (APNOMS) Network Operations and Management Symposium (APNOMS), 2012 14th Asia-Pacific. :1-4 Sep, 2012

Relation: 2012 14th Asia-Pacific Network Operations and Management Symposium (APNOMS)

Semiconductor device including a high voltage P-channel transistor and method for manufacturing the same

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME

Semiconductor device and method of manufacturing same

Method of manufacturing semiconductor device

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same

Manufacturing method of semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device and method of fabricating thereof