A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

Authors: Hitoshi Kunitake, Kazuaki Ohshima, Kazuki Tsuda, Noriko Matsumoto, Tatsuki Koshida, Satoru Ohshita, Hiromi Sawai, Yuichi Yanagisawa, Shiori Saga, Ryo Arasawa, Takako Seki, Ryunosuke Honda, Haruyuki Baba, Daigo Shimada, Hajime Kimura, Ryo Tokumaru, Tomoaki Atsumi, Kiyoshi Kato, Shunpei Yamazaki

Source: IEEE Journal of the Electron Devices Society, Vol 7, Pp 495-502 (2019)

Subject Terms: C-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO), leakage current, nonvolatile memory, random access memory, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

File Description: electronic resource

Relation: https://ieeexplore.ieee.org/document/8684203/; https://doaj.org/toc/2168-6734

Access URL: https://doaj.org/article/3b4a197508f54d028b2b33ddeb7df132