A Study on the Effect of Ion Implant to Wafer Shape and the Ion Implanter to Process the Distorted Thin SiC Wafer

Authors: Zhao, WeiJiang, Shiojiri, Shiro, Tobikawa, Kazuki, Itoi, Suguru, Sakai, Shigeki

Source: 2018 22nd International Conference on Ion Implantation Technology (IIT) Ion Implantation Technology (IIT), 2018 22nd International Conference on. :299-302 Sep, 2018

Relation: 2018 22nd International Conference on Ion Implantation Technology (IIT)

Optimization of the Ion Source Parameters to Change the Proportion of Single and Molecular Ions in Plasma

Authors: Kawamura, Masamitsu, Yamamoto, Tetusro, Kuwata, Yusuke, Sakai, Shigeki, Hamamoto, Nariaki

Source: 2018 22nd International Conference on Ion Implantation Technology (IIT) Ion Implantation Technology (IIT), 2018 22nd International Conference on. :330-333 Sep, 2018

Relation: 2018 22nd International Conference on Ion Implantation Technology (IIT)

High-Endurance Ferroelectric NOR Flash Memory Using (Ca,Sr)Bi2Ta2O9 FeFETs

Authors: Takahashi, Mitsue, Zhang, Wei, Sakai, Shigeki

Source: 2018 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2018 IEEE International. :1-4 May, 2018

Relation: 2018 IEEE International Memory Workshop (IMW)

Dynamic Analog Characteristics of 10^9 Cycle-Endurance Low-Voltage Nonvolatile Ferroelectric-Gate Memory Transistors

Authors: Sakai, Shigeki, Zhang, Wei, Takahashi, Mitsue

Source: 2017 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2017 IEEE International. :1-4 May, 2017

Relation: 2017 IEEE International Memory Workshop (IMW)

Nipple Reduction Surgery

Authors: Sakai, Shigeki

Source: Keisei geka. 66(5):557-563

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN633385968&indx=1&recIds=ETOCRN633385968

Annealing Behavior of Aluminum Implanted Germanium

Authors: Onoda, Hiroshi, Nakashima, Yoshiki, Nagayama, Tsutomu, Sakai, Shigeki, Joshi, Abhijeet, Zaima, Shigeaki

Source: 2016 21st International Conference on Ion Implantation Technology (IIT) Ion Implantation Technology (IIT), 2016 21st International Conference on. :1-4 Sep, 2016

Relation: 2016 21st International Conference on Ion Implantation Technology (IIT)

Precise understanding of ferroelectric properties in metal/ferroelectric/insulator/semiconductor FETs with (Ca,Sr)Bi2Ta2O9

Authors: Takahashi, Mitsue, Zhang, Wei, Sakai, Shigeki

Source: 2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM) Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM), 2017 Joint IEEE International Symposium on the. :93-95 May, 2017

Relation: 2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)

An Extended Kolmogorov–Avrami–Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors.

Authors: Sakai, Shigeki^1,2 (AUTHOR) mitsue-takahashi@aist.go.jp, Takahashi, Mitsue¹ (AUTHOR)

Source: Materials (1996-1944). Mar2024, Vol. 17 Issue 5, p1077. 30p.

Subject Terms: *FIELD-effect transistors, *ELECTRIC fields, *DYNAMIC models, *DISTRIBUTION (Probability theory), *PHYSICS, *PHOTOVOLTAIC effect

A study on Silicon Carbide (SiC) wafer using ion implantation

Authors: Weijiang Zhao, Tobikawa, Kazuki, Nagayama, Tsutomu, Sakai, Shigeki

Source: 2014 20th International Conference on Ion Implantation Technology (IIT) Ion Implantation Technology (IIT), 2014 20th International Conference on. :1-4 Jun, 2014

Relation: 2014 20th International Conference on Ion Implantation Technology (IIT)

Damage control with cluster ion implantation

Authors: Sakai, Shigeki, Hamamoto, Nariaki, Nakashima, Yoshiki, Onoda, Hiroshi

Source: 2013 13th International Workshop on Junction Technology (IWJT) Junction Technology (IWJT), 2013 13th International Workshop on. :26-29 Jun, 2013

Relation: 2013 13th International Workshop on Junction Technology (IWJT)

High dose dopant implantation to heated Si substrate without amorphous layer formation

Authors: Onoda, Hiroshi, Nakashima, Yoshiki, Nagayama, Tsutomu, Sakai, Shigeki

Source: 2013 13th International Workshop on Junction Technology (IWJT) Junction Technology (IWJT), 2013 13th International Workshop on. :66-69 Jun, 2013

Relation: 2013 13th International Workshop on Junction Technology (IWJT)

Usefulness of nylon thread eyelid frontalis muscle lifting technique

Authors: Sakai, Shigeki

Source: Rinsho ganka. 76(2):184-191

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN630121498&indx=1&recIds=ETOCRN630121498

Comparison of BF2, In, Ga, C+Ga & In+BF2 Dopant for 22nm node bulk & PD-SOI HALO implantation or ground plane back-gate doping for FD-SOI CMOS technologies

Authors: Borland, John, Tanjyo, Masayasu, Sakai, Shigeki, Nagayama, Tsutomu, Kiyama, Hiroki, Suguro, Kyoichi

Source: 2012 12th International Workshop on Junction Technology Junction Technology (IWJT), 2012 12th International Workshop on. :38-41 May, 2012

Relation: 2012 12th International Workshop on Junction Technology (IWJT)

0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory

Authors: Zhang, Xizhen, Miyaji, Kousuke, Takahashi, Mitsue, Takeuchi, Ken, Sakai, Shigeki

Source: 2011 3rd IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2011 3rd IEEE International. :1-4 May, 2011

Relation: 2011 3rd IEEE International Memory Workshop (IMW)

Downsizing of Ferroelectric-Gate Field-Effect-Transistors for Ferroelectric-NAND Flash Memory Cells

Authors: Hai, Le Van, Takahashi, Mitsue, Sakai, Shigeki

Source: 2011 3rd IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2011 3rd IEEE International. :1-4 May, 2011

Relation: 2011 3rd IEEE International Memory Workshop (IMW)

Effects of cluster carbon implantation at low temperature on damage recovery after rapid thermal annealing

Authors: Onoda, Hiroshi, Hamamoto, Nariaki, Nagayama, Tsutomu, Sakai, Shigeki, Tanjyo, Masayasu, Umisedo, Sei, Koga, Yuji, Maehara, Noriaki, Kawamura, Yasunori, Nakashima, Yoshiki, Tanaka, Kouhei, Hashino, Yoshikazu, Hashimoto, Masahiro, Yoshimi, Hideki, Sezaki, Shinichi, Reyes, Jason, Prussin, Simon

Source: 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP) Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on. :72-75 Sep, 2010

Relation: 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP)

A 1.0V power supply, 9.5GByte/sec write speed, Single-Cell Self-Boost program scheme for Ferroelectric NAND Flash SSD

Authors: Miyaji, Kousuke, Noda, Shinji, Hatanaka, Teruyoshi, Takahashi, Mitsue, Sakai, Shigeki, Takeuchi, Ken

Source: 2010 IEEE International Memory Workshop Memory Workshop (IMW), 2010 IEEE International. :1-4 May, 2010

Relation: 2010 IEEE International Memory Workshop (IMW)

A Novel Technique to Achieve Rapid Wound Healing of Donor Site Wounds in Split-Thickness Skin Grafts of a Patient Undergoing Anticoagulation Therapy

Authors: Uoya, Yuichiro, Ishii, Naohiro, Sakai, Shigeki, Kiuchi, Tomoki, Uno, Takahiro, Kishi, Kazuo

Source: International journal of lower extremity wounds. 20(2):162-166

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN626931960&indx=1&recIds=ETOCRN626931960

High temperature ion implanter for SiC and Si devices

Authors: Takahashi, Naoya, Itoi, Suguru, Nakashima, Yoshiki, Zhao, WeiJiang, Onoda, Hiroshi, Sakai, Shigeki

Source: 2015 15th International Workshop on Junction Technology (IWJT) Junction Technology (IWJT), 2015 15th International Workshop on. :6-7 Jun, 2015

Relation: 2015 15th International Workshop on Junction Technology (IWJT)

A 0.5V operation, 32% lower active power, 42% lower leakage current, ferroelectric 6T-SRAM with VTH self-adjusting function for 60% larger St atic Noise Margin

Authors: Tanakamaru, Shuhei, Hatanaka, Teruyoshi, Yajima, Ryoji, Takahashi, Mitsue, Sakai, Shigeki, Takeuchi, Ken

Source: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009

Relation: 2009 IEEE International Electron Devices Meeting (IEDM)