Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Authors: Tabataba-Vakili, Farsane, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Damilano, Benjamin, Frayssinet, Eric, Duboz, Jean-Yves, Checoury, Xavier, Sauvage, Sébastien, Kurdi, Moustafa El, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe

Source: Sci Rep 9, 18095 (2019)

Subject Terms: Physics - Applied Physics, Physics - Optics

Access URL: http://arxiv.org/abs/1910.09236

III-nitride on silicon electrically injected microrings for nanophotonic circuits

Authors: Tabataba-Vakili, Farsane, Rennesson, Stéphanie, Damilano, Benjamin, Frayssinet, Eric, Duboz, Jean-Yves, Semond, Fabrice, Roland, Iannis, Paulillo, Bruno, Colombelli, Raffaele, Kurdi, Moustafa El, Checoury, Xavier, Sauvage, Sébastien, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Gayral, Bruno, Boucaud, Philippe

Source: Opt. Express 27, 11800-11808 (2019)

Subject Terms: Physics - Applied Physics

Access URL: http://arxiv.org/abs/1904.03101

Blue Microlasers Integrated on a Photonic Platform on Silicon

Authors: Tabataba-Vakili, Farsane, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Frayssinet, Eric, Damilano, Benjamin, Duboz, Jean-Yves, Semond, Fabrice, Roland, Iannis, Kurdi, Moustafa El, Checoury, Xavier, Sauvage, Sébastien, Gayral, Bruno, Boucaud, Philippe

Source: ACS Photonics 2018, 5, 3643-3648

Subject Terms: Physics - Applied Physics

Access URL: http://arxiv.org/abs/1904.03087

Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Authors: Tabataba-Vakili, Farsane, Roland, Iannis, Tran, Thi-Mo, Checoury, Xavier, Kurdi, Moustafa El, Sauvage, Sébastien, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe

Source: Appl. Phys. Lett. 111, 131103 (2017)

Subject Terms: Physics - Applied Physics

Access URL: http://arxiv.org/abs/1904.03055

Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Authors: Carneiro, Elodie, Rennesson, Stéphanie, Tamariz, Sebastian, Harrouche, Kathia, Semond, Fabrice, Medjdoub, Farid

Source: Physica status solidi.A.Applications and materials science. 220(16)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100190421808.0x000001&indx=1&recIds=ETOCvdc_100190421808.0x000001

Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate.

Authors: Carneiro, Elodie, Rennesson, Stéphanie, Tamariz, Sebastian, Harrouche, Kathia, Semond, Fabrice, Medjdoub, Farid

Source: Electronics (2079-9292); Jul2023, Vol. 12 Issue 13, p2974, 8p

Subject Terms: HIGH voltages, GALLIUM nitride, MOLECULAR beam epitaxy, TRANSISTORS, THRESHOLD voltage, STRAY currents

Opto-electrical characterization of infrared sensors based on carbon nanotube films

Alternate Title: Caractérisation électro-optique de détecteurs infrarouge à base de films de nanotubes de carbone (French)

Authors: Koechlin, Charlie, Maine, Sylvain, Rennesson, Stéphanie, Haidar, Riad, Trétout, Brigitte, Loiseau, Annick, Pelouard, Jean-Luc

Source: In Comptes rendus - Physique 2010 11(5):405-410

Laser damage of free-standing nanometer membranes.

Authors: Morimoto, Yuya^1,2, Roland, Iännis³, Rennesson, Stéphanie⁴, Semond, Fabrice⁴, Boucaud, Philippe³, Baum, Peter^1,2, peter.baum@lmu.de

Source: Journal of Applied Physics; 12/7/2017, Vol. 122 Issue 21, p1-6, 6p

Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Authors: Tabataba-Vakili, Farsane, Roland, Iannis, Tran, Thi-Mo, Checoury, Xavier, El Kurdi, Moustafa, Sauvage, Sébastien, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe

Source: Applied physics letters. 111(13)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100090527604.0x000001&indx=1&recIds=ETOCvdc_100090527604.0x000001

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Authors: Zúñiga-Pérez, Jesús, Consonni, Vincent, Lymperakis, Liverios, Kong, Xiang, Trampert, Achim, Fernández-Garrido, Sergio, Brandt, Oliver, Renevier, Hubert, Keller, Stacia, Hestroffer, Karine, Wagner, Markus R., Reparaz, Juan Sebastián, Akyol, Fatih, Rajan, Siddharth, Rennesson, Stéphanie, Palacios, Tomás, Feuillet, Guy

Source: Applied physics reviews. 3(4)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100150967582.0x000001&indx=1&recIds=ETOCvdc_100150967582.0x000001

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