U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

Authors: Wu, Ming-Hung, Hong, Ming-Chun, Shih, Ching, Chang, Yao-Jen, Hsin, Yu-Chen, Chiu, Shih-Ching, Chen, Kuan-Ming, Su, Yi-Hui, Wang, Chih-Yao, Yang, Shan-Yi, Chen, Guan-Long, Lee, Hsin-Han, Rahaman, Sk Ziaur, Wang, I-Jung, Shih, Chen-Yi, Chang, Tsun-Chun, Wei, Jeng-Hua, Sheu, Shyh-Shyuan, Lo, Wei-Chung, Chang, Shih-Chieh, Hou, Tuo-Hung

Source: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023

Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Structure and Performance Co-optimization for the Development of Highly Reliable Spin-Orbit Torque Magnetic Random Access Memory

Authors: Rahaman, Sk Ziaur, Hsin, Yu-Chen, Yang, Shan-Yi, Chang, Yao-Jen, Lee, Hsin-Han, Chen, Kuan-Ming, Wang, I-Jung, Chen, Guan-Long, Su, Yi-Hui, Shih, Cheng-Yi, Chiu, Shih-Ching, Wang, Chih-Yao, Wei, Jeng-Hua, Sheu, Shyh-Shyuan, Lo, Wei-Chung, Deng, Duan-Li, Chang, Shih-Chieh

Source: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023 International VLSI Symposium on. :1-2 Apr, 2023

Relation: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)

Design of High-RA STT-MRAM for Future Energy-Efficient In-Memory Computing

Authors: Hong, Ming-Chun, Su, Yi-Hui, Chen, Guan-Long, Hsin, Yu-Chen, Chang, Yao-Jen, Chen, Kuan-Ming, Yang, Shan-Yi, Wang, I-Jung, Rahaman, SK Ziaur, Lee, Hsin-Han, Wei, Jeng-Hua, Sheu, Shyh-Shyuan, Lo, Wei-Chung, Chang, Shih-Chieh, Hou, Tuo-Hung

Source: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023 International VLSI Symposium on. :1-2 Apr, 2023

Relation: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)

A 4K–400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer

Authors: Hong, Ming-Chun, Chang, Yao-Jen, Hsin, Yu-Chen, Liu, Liang-Ming, Chen, Kuan-Ming, Su, Yi-Hui, Chen, Guan-Long, Yang, Shan-Yi, Wang, I-Jung, Rahaman, SK Ziaur, Lee, Hsin-Han, Chiu, Shih-Ching, Shih, Chen-Yi, Wang, Chih-Yao, Chen, Fang-Ming, Wei, Jeng-Hua, Sheu, Shyh-Shyuan, Lo, Wei-Chung, Lin, Minn-Tsong, Wu, Chih-I, Hou, Tuo-Hung

Source: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :379-380 Jun, 2022

Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

The thermal stability improvement of spin-orbit-torque (SOT) devices with a thin PtMn insertion

Authors: Chang, Yao-Jen, Chen, Fang-Ming, Chen, Kuan-Ming, Yang, Shan-Yi, Hsin, Yu-Chen, Rahaman, Sk Ziaur, Wang, I-Jung, Lee, Hsin-Han, Su, Yi-Hui, Chen, Guan-Long, Shih, Cheng-Yi, Chiu, Shih-Ching, Wei, Jeng-Hua, Sheu, Shyh-Shyuan, Lo, Wei-Chung, Tseng, Yuan-Chieh, Lai, Chih-Huang, Tang, Denny, Wu, Chih-I

Source: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2022 International Symposium on. :1-2 Apr, 2022

Relation: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

An 8kb spin-orbit-torque magnetic random-access memory

Authors: Chen, Guan-Long, Wang, I-Jung, Yeh, Po-Shao, Li, Sih-Han, Yang, Shan-Yi, Hsin, Yu-Chen, Wu, Hsin-Tsun, Hsiao, Hsu-Ming, Chang, Yao-Jen, Chen, Kuan-Ming, Rahaman, SK Ziaur, Lee, Hsin-Han, Su, Yi-Hui, Chen, Fang-Ming, Wei, Jeng-Hua, Sheu, Shyh-Shyuan, Wu, Chih-I, Tang, Denny

Source: 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2021 International Symposium on. :1-2 Apr, 2021

Relation: 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications

Authors: Chen, Fang-Ming, Wang, I-Jung, Wang, Ding-Yeong, Yang, Shan-Yi, Hsin, Yu-Chen, Chang, Yao-Jen, Lee, Hsin-Han, Chen, Guan-Long, Kuo, Yi-Ching, Su, Yi-Hui, Rahaman, Sk. Ziaur, Wei, Jeng-Hua, Li, Sih-Han, Sheu, Shyh-Shyuan, Lo, Wei-Chung, Chang, Shih-Chieh, Wu, Chih-I

Source: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2020 International Symposium on. :104-105 Aug, 2020

Relation: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

Occurrence and solution to overcome 1st RESET resistance pinning effect in Ti/HfOx based RRAM for low power nonvolatile memory applications

Authors: Rahaman, Sk. Ziaur, Heng-Yuan Lee, Yu-De Lin, Chien-Hua Hsu, Kan-Hsueh Tsai, Wei-Su Chen, Chen, Yu-Sheng, Pang-Shiu Chen, Pei-Hua Wang

Source: 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems and Application (VLSI-TSA), 2017 International Symposium on. :1-2 Apr, 2017

Relation: 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

Effect of Ti buffer layer on HfOx-based bipolar and complementary resistive switching for future memory applications

Authors: Rahaman, Sk. Ziaur, Lin, Yu-De, Gu, Pei-Yi, Lee, Heng-Yuan, Chen, Yu-Sheng, Chen, Pan-Shiu, Tsai, Kan-Hsueh, Chen, Wei-Su, Hsu, Chien-Hua, Tu, Po-Tsung, Chen, Frederick T., Tsai, Ming-Jinn, Ku, Tzu-Kun, Wang, Pei-Hua

Source: 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems and Application (VLSI-TSA), 2016 International Symposium on. :1-2 Apr, 2016

Relation: 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

Authors: Rahaman, Sk Ziaur, Wang, I-Jung, Wang, Ding-Yeong, Pai, Chi-Feng, Hsin, Yu-Chen, Yang, Shan-Yi, Lee, Hsin-Han, Chang, Yao-Jen, Kuo, Yi-Ching, Su, Yi-Hui, Chen, Guan-Long, Chen, Fang-Ming, Wei, Jeng-Hua, Hou, Tuo-Hung, Sheu, Shyh-Shyuan, Wu, Chih-I, Deng, Duan-Lee

Source: IEEE journal of the Electron Devices Society. 8:163-169

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100101046620.0x000001&indx=1&recIds=ETOCvdc_100101046620.0x000001

Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution

Authors: Rahaman, Sk. Ziaur, Lee, Heng-Yuan, Chen, Yu-Sheng, Lin, Yu-De, Chen, Pang-Shiu, Chen, Wei-Su, Wang, Pei-Hua

Source: Applied physics letters. 110(21)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100090357196.0x000001&indx=1&recIds=ETOCvdc_100090357196.0x000001

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Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution.

Authors: Rahaman, Sk. Ziaur, Heng-Yuan Lee, Yu-Sheng Chen, Yu-De Lin, Pang-Shiu Chen, Wei-Su Chen, Pei-Hua Wang

Source: Applied Physics Letters; 5/22/2017, Vol. 110 Issue 21, p1-5, 5p, 1 Color Photograph, 1 Chart, 4 Graphs

Subject Terms: COMPLEMENTARY metal oxide semiconductors, DIGITAL electronics, BUFFER solutions, HYDROGEN-ion concentration, METAL oxide semiconductors

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories.

Authors: Rahaman, Sk. Ziaur¹ skzia@itri.org.tw, Yu-De Lin¹, Heng-Yuan Lee¹, Yu-Sheng Chen¹, Pang-Shiu Chen², Wei-Su Chen¹, Chien-Hua Hsu¹, Kan-Hsueh Tsai¹, Ming-Jinn Tsai¹, Pei-Hua Wang¹

Source: Langmuir. May2017, Vol. 33 Issue 19, p4654-4665. 12p.

Subject Terms: *NONVOLATILE random-access memory, *BUFFER layers, *HAFNIUM oxide, *ELECTROMAGNETIC compatibility, *TEMPERATURE effect

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