Investigating the physical mechanism of ion-slicing in AlN and hetero-integrating AlN thin film on Si(100) substrate

Authors: Qin, Qingcheng, Shi, Hangning, Yuan, Ye, Ding, Jiaxin, Yi, Ailun, Xu, Wenhui, Zhou, Min, Zhang, Jian, Lu, Tongxin, Yang, Yi, You, Tiangui, Wang, Xinqiang, Ou, Xin

Source: In Materials Science in Semiconductor Processing 15 June 2024 176

Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures.

Authors: Shi, Hangning^1,2, Ding, Jiaxin^1,2, Qin, Qingcheng^1,3, Yi, Ailun^1,2, Sun, Jialiang^1,2, Suga, Tadatomo⁴, Yi, Juemin⁵, Wang, Jianfeng⁵, Xu, Ke⁵, Zhou, Min¹, Huang, Kai^1,2, You, Tiangui^1,2, t.you@mail.sim.ac.cn, Ou, Xin^1,2, ouxin@mail.sim.ac.cn

Source: Applied Physics Letters; 5/6/2024, Vol. 124 Issue 19, p1-6, 6p

Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology.

Authors: Shi, Hangning, Yi, Ailun, Ding, Jiaxin, Liu, Xudong, Qin, Qingcheng, Yi, Juemin, Hu, Junjie, Wang, Miao, Cai, Demin, Wang, Jianfeng, Xu, Ke, Mu, Fengwen, Suga, Tadatomo, Heller, René, Wang, Mao, Zhou, Shengqiang, Xu, Wenhui, Huang, Kai, You, Tiangui, Ou, Xin

Source: SCIENCE CHINA Information Sciences; Nov2023, Vol. 66 Issue 11, p1-2, 2p