Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping

Authors: Safron, N., Chiu, H.-Y., Chao, T.-A., Su, S.-K., Passlack, M., Chiu, K.-H., Chen, C.-W., Kei, C.-C., Chou, C.-H., Lee, T.-E., Wang, J.-F., Chang, C.-S., Liew, S.-L., Hou, V.D.H., Wang, H., Chang, W.-H., Wong, H.-S.P., Pitner, G., Chien, C.-H., Radu, I.P.

Source: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

Relation: 2023 International Electron Devices Meeting (IEDM)

Impact of Metal Hybridization on Contact Resistance and Leakage Current of Carbon Nanotube Transistors

Authors: Su, S., Sanchez-Soares, A., Chen, E., Kelly, T., Fagas, G., Greer, J.C., Pitner, G., Wong, H.P., Radu, I.P.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(8):1367-1370 Aug, 2022

Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs

Authors: Lin, Q., Pitner, G., Gilardi, C., Su, S., Zhang, Z., Chen, E., Bandaru, P., Kummel, A., Wang, H., Passlack, M., Mitra, S., Wong, H.P.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(3):490-493 Mar, 2022

Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons

Authors: Mutlu, Z., Lin, Y., Barin, G. B., Zhang, Z., Pitner, G., Wang, S., Darawish, R., Giovannantonio, M. Di, Wang, H., Cai, J., Passlack, M., Diaz, C. H., Narita, A., Mullen, K., Fischer, F. R., Bandaru, P., Kummel, A. C., Ruffieux, P., Fasel, R., Bokor, J.

Source: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :37.4.1-37.4.4 Dec, 2021

Relation: 2021 IEEE International Electron Devices Meeting (IEDM)

Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors

Authors: Lin, Y., Shen, P.-C., Su, C., Chou, A.-S., Wu, T., Cheng, C.-C., Park, J.-H., Chiu, M.-H., Lu, A.-Y., Tang, H.-L., Tavakoli, M. M., Pitner, G., Ji, X., McGahan, C., Wang, X., Cai, Z., Mao, N., Wang, J., Wang, Y., Tisdale, W., Ling, X., Aidala, K. E., Tung, V., Li, J., Zettl, A., Wu, C.-I., Guo, Jing, Wang, H., Bokor, J., Palacios, T., Li, L.-J., Kong, J.

Source: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :37.2.1-37.2.4 Dec, 2021

Relation: 2021 IEEE International Electron Devices Meeting (IEDM)

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

Authors: Pitner, G., Zhang, Z., Lin, Q., Su, S.-K, Gilardi, C., Kuo, C., Kashyap, H., Weiss, T., Yu, Z., Chao, T. -A., Li, L.-J., Mitra, S., Wong, H. -S. P., Cai, J., Kummel, A., Bandaru, P., Passlack, M.

Source: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :3.5.1-3.5.4 Dec, 2020

Relation: 2020 IEEE International Electron Devices Meeting (IEDM)

Switching limits of top-gated carbon nanotube field-effect transistors

Authors: Sanchez-Soares, A., Gilardi, C., Lin, Q., Kelly, T., Su, S.-K., Fagas, G., Greer, J.C., Pitner, G., Chen, E.

Source: In Solid State Electronics April 2023 202

Full-wave, TwinAx, differential cable modeling

Authors: de Araujo, D.N., Pitner, G., Commens, M., Mutnury, B., Diepenbrock, J.

Source: 2008 58th Electronic Components and Technology Conference Electronic Components and Technology Conference, 2008. ECTC 2008. 58th. :1684-1689 May, 2008

Relation: 2008 58th Electronic Components and Technology Conference (ECTC 2008)

Origins and implications of increased channel hot carrier variability in nFinFETs

Authors: Kaczer, B., Franco, J., Cho, M., Grasser, T., Roussel, Ph. J., Tyaginov, S., Bina, M., Wimmer, Y., Procel, L. M., Trojman, L., Crupi, F., Pitner, G., Putcha, V., Weckx, P., Bury, E., Ji, Z., De Keersgieter, A., Chiarella, T., Horiguchi, N., Groeseneken, G., Thean, A.

Source: 2015 IEEE International Reliability Physics Symposium Reliability Physics Symposium (IRPS), 2015 IEEE International. :3B.5.1-3B.5.6 Apr, 2015

Relation: 2015 IEEE International Reliability Physics Symposium (IRPS)

Computational Modeling of Anisotropic Thermal Conductivity and Joule Heating on Printed Circuit Boards
International mechanical engineering congress

Authors: Dogruoz, M.B., Shankaran, G., Pitner, G., Nagulapally, M.

Source: INTERNATIONAL MECHANICAL ENGINEERING CONGRESS. 6(B):1381-1388

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN082959890&indx=1&recIds=ETOCCN082959890

SCience Hybrid Orbiter and Lunar Relay (SCHOLR) Architecture and Design
AIAA Space Conference and Exposition

Authors: Trase, K., Coulter, R., Chaney, R., Gao, H., Huyhm, D., Iaconis, N., Macmillan, T., Pitner, G., Schwab, D.

Source: PAPERS - AMERICAN INSTITUTE OF AERONAUTICS AND ASTRONAUTICS. 3:1721-1751

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN079056787&indx=1&recIds=ETOCCN079056787

Energy-Efficient Abundant-Data Computing: The N3XT 1,000x

Authors: Sabry Aly, M. M., Gao, M., Hills, G., Lee, C. S., Pitner, G., Shulaker, M. M., Wu, T. F., Asheghi, M., Bokor, J., Franchetti, F.

Source: COMPUTER -IEEE COMPUTER SOCIETY-. 48(12):24-33

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN375683396&indx=1&recIds=ETOCRN375683396

Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single-Walled Carbon Nanotube/C60 Phototransistor

Authors: Park, S., Kim, S. J., Nam, J. H., Pitner, G., Lee, T. H., Ayzner, A. L., Wang, H., Fong, S. W., Vosgueritchian, M., Park, Y. J.

Source: ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM-. 27(4):759-765

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN366051154&indx=1&recIds=ETOCRN366051154

VLSI-Compatible Carbon Nanotube Doping Technique with Low Work-Function Metal Oxides

Authors: Liyanage, L.S., Xu, X., Pitner, G., Bao, Z., Wong, H.-S.P.

Source: NANO LETTERS. 14(4):1884-1890

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN353272480&indx=1&recIds=ETOCRN353272480

Dispersion of High-Purity Semiconducting Arc-Discharged Carbon Nanotubes Using Backbone Engineered Diketopyrrolopyrrole (DPP)-Based Polymers

Authors: Lei, T., Pitner, G., Chen, X., Hong, G., Park, S., Hayoz, P., Weitz, R. T., Wong, H. S., Bao, Z.

Source: ADVANCED ELECTRONIC MATERIALS. 2(1)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN374864221&indx=1&recIds=ETOCRN374864221

TDR-like low-frequency circuit test and characterization system for package and module interconnects utilizing transient thermal signals [2337-06]
Optical characterization techniques for high-performance microelectronic devices manufacturing

Authors: Flake, R. H., Halstadt, D. B., Wong, A., Pitner, G.

Source: PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING. 2337:38-46

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN005507492&indx=1&recIds=ETOCCN005507492

TDR-like low-frequency circuit test and characterization system for package and module interconnects utilizing transient thermal signals [2337-06]
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing

Authors: Flake, R. H., Halstadt, D. B., Wong, A., Pitner, G.

Source: PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING. (E 2337):38-38

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCEN021180361&indx=1&recIds=ETOCEN021180361

Mode conversion effects in multi-Gbps telecommunications blade system.

Authors: Pitner, G., de Araujo, D.N., Minhong Mi, Mutnury, B., Cases, M., Pham, N.

Source: 2009 IEEE International Symposium on Electromagnetic Compatibility; 2009, p268-273, 6p

Design issues in telecommunication blade systems and their resolution through design of experiments.

Authors: Mutnury, B., Pham, N., Cases, M., De Araujo, D.N., Pitner, G.

Source: 2009 59th Electronic Components & Technology Conference; 2009, p1887-1893, 7p

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