Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates

Authors: Apoorva Sood, Dong-Sing Wuu, Fu-Gow Tarntair, Ngo Thien Sao, Tian-Li Wu, Niall Tumilty, Hao-Chung Kuo, Singh Jitendra Pratap, Ray-Hua Horng

Source: Materials Today Advances, Vol 17, Iss , Pp 100346- (2023)

Subject Terms: Unintentionally doped (UID) β-Ga2O3 epilayers, Schottky barrier diodes (SBDs), Rapid thermal annealing (RTA), Atomic force microscopy (AFM), Schottky (S), Ohmic (O) contacts, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2590049823000061; https://doaj.org/toc/2590-0498

Access URL: https://doaj.org/article/6a918dff8a3345968b2ea1de2b4b5d98