Impact of Dual Oxide on Charge Plasma-based Junctionless Tunnel Field Effect Transistor

Authors: Chandan, Bandi Venkata, Dharmender, Dharmender, Nigam, Kaushal Kumar, Srinivasa Subbarao, P.

Source: 2024 International Conference on Integrated Circuits and Communication Systems (ICICACS) Integrated Circuits and Communication Systems (ICICACS), 2024 International Conference on. :1-5 Feb, 2024

Relation: 2024 International Conference on Integrated Circuits and Communication Systems (ICICACS)

Examination of Interface Trap Charges on Electrically Doped Tunnel FET in the Presence of High-K Dielectric

Authors: Chandan, Bandi Venkata, Dharmender, Subbarao, Penjerla Srinivasa, Nigam, Kaushal Kumar

Source: 2023 7th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) Electronics, Materials Engineering & Nano-Technology (IEMENTech), 2023 7th International Conference on. :1-6 Dec, 2023

Relation: 2023 7th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech)

A Novel Approach to Enhance the Performance of TFET using Metal Strip Layer for High-Frequency Applications

Authors: Chandan, Bandi Venkata, Dharmender, Nigam, Kaushal Kumar

Source: 2023 International Conference on Modeling, Simulation & Intelligent Computing (MoSICom) Modeling, Simulation & Intelligent Computing (MoSICom), 2023 International Conference on. :339-344 Dec, 2023

Relation: 2023 International Conference on Modeling, Simulation & Intelligent Computing (MoSICom)

Performance and Reliability Investigation of Mg2Si based Tunnel FET under Temperature Variations for High-Sensitivity Applications

Authors: Chandan, Bandi Venkata ^⁎, Nigam, Kaushal Kumar, Tanveer, Adil

Source: In Micro and Nanostructures April 2025 200

Reliability optimization of dopant-free TFET performance through advanced metal layer techniques

Authors: Chandan, Bandi Venkata, Bakshi, Madhura Prashant, Nigam, Kaushal Kumar

Source: In Microelectronics Reliability December 2024 163

Performance analysis of dual material control gate cavity on source electrically doped TFET biosensor for biomedical applications

Authors: Dharmender, Nigam, Kaushal Kumar, Yadav, Piyush, Tikkiwal, Vinay Anand

Source: In Micro and Nanostructures July 2024 191

Theoretical and simulation-based assessment of electrically doped junctionless TFET with metal-strip and hetero-material considering interface trap charges

Authors: Chandan, Bandi Venkata, Nigam, Kaushal Kumar

Source: In Microelectronics Reliability June 2024 157

A theoretical investigation of mole fraction-based N[formula omitted] pocket doped stack oxide TFET considering ideal conditions for reliability issues

Authors: Nigam, Kaushal Kumar, Dharmender

Source: In Microelectronics Reliability April 2024 155

Design and Performance Evaluation of a Heterojunction GaAs/GaSb PC-TFET for Label-Free Biosensing Applications: Design and Performance Evaluation...: M. K. Bind et al.

Authors: Bind, Mukesh Kumar¹, mukesh.bind@jiit.ac.in, Singh, Sajai Vir¹, Nigam, Kaushal Kumar²

Source: Journal of Electronic Materials; Mar2025, Vol. 54 Issue 3, p1691-1708, 18p

Performance and reliability of N-type doping-free TFETs: the role of compound semiconductor materials.

Authors: Chandan, Bandi Venkata, Nigam, Kaushal Kumar

Source: Multiscale & Multidisciplinary Modeling, Experiments & Design; Mar2025, Vol. 8 Issue 3, p1-21, 21p

Numerical Investigation of RbGeI3-Based Lead-Free Perovskite Solar Cell with Various Cu-Based Hole Transport Layers Using SCAPS-1D: Numerical Investigation of RbGeI3-Based Lead-Free Perovskite Solar Cell with Various Cu-Based...: Dharmender et al

Authors: Dharmender¹, dharmender.nishad@gmail.com, Nigam, Kaushal Kumar², Yadav, Piyush³, Kuksal, Shrija¹, Parashar, Tushar¹, Chauhan, Sudakar Singh⁴

Source: Journal of Electronic Materials; Apr2025, Vol. 54 Issue 4, p2747-2765, 19p

Numerical Investigation of RbGeI3-Based Lead-Free Perovskite Solar Cell with Various Cu-Based Hole Transport Layers Using SCAPS-1D: Numerical Investigation of RbGeI3-Based Lead-Free Perovskite Solar Cell with Various Cu-Based...: Dharmender et al

Authors: Dharmender, Nigam, Kaushal Kumar, Yadav, Piyush, Kuksal, Shrija, Parashar, Tushar, Chauhan, Sudakar Singh

Source: Journal of Electronic Materials; Apr2025, Vol. 54 Issue 4, p2747-2765, 19p

Subject Terms: SOLAR cell efficiency, SOLAR cells, ELECTRON transport, SOLAR energy, SHORT-circuit currents

Design and Performance Analysis of Polarity Control Junctionless TFET (PC-JL-TFET)-Based Biosensor.

Authors: Bind, Mukesh Kumar¹, mukesh.bind@jiit.ac.in, Singh, Sajai Vir¹, sajaivir.singh@jiit.ac.in, Nigam, Kaushal Kumar², kknigam.etc@nitrr.ac.in

Source: Journal of Circuits, Systems & Computers; 11/30/2024, Vol. 33 Issue 17, p1-25, 25p

Mole Fraction-Based Approach for Sensitivity Analysis of Dual Material Control Gate Polarity Controlled Tunnel Field Effect Transistor for Applications in Biomedical Engineering.

Authors: Shreyanshi, Maturkar¹, maturkarshreyanshi@gmail.com, Sangeedh¹, sangeedh1999@gmail.com, Nigam, Kaushal Kumar¹, kknigam.etc@nitrr.ac.in, Raghuvanshi, Ajay Singh¹, asraghuvanshi.etc@nitrr.ac.in, Dharmender², dharmender.nishad@glbitm.ac.in

Source: Journal of Circuits, Systems & Computers; 8/1/2024, Vol. 33 Issue 12, p1-20, 20p

Investigation of Si1−XGeX source dual material stacked gate oxide pocket doped hetero-junction TFET for low power and RF applications.

Authors: Dharmender¹ (AUTHOR), Nigam, Kaushal Kumar² (AUTHOR), Yadav, Piyush¹ (AUTHOR), Kumar, Amit¹ (AUTHOR) amitkatyal101@gmail.com

Source: International Journal of Electronics. Apr2024, Vol. 111 Issue 4, p599-615. 17p.

Subject Terms: *Computer-aided design, Radio frequency, Field-effect transistors, Indium gallium zinc oxide, Silicon alloys, Mole fraction

Sensitivity and Non-Ideal Issues Analysis of a Dielectric-Modulated Electrically Doped Junctionless TFET-Based Label-Free Biosensor

Authors: Bind, Mukesh Kumar, Nigam, Kaushal Kumar

Source: IEEE Sensors Journal; August 2024, Vol. 24 Issue: 15 p24023-24030, 8p

Investigation of Si1−XGeX source dual material stacked gate oxide pocket doped hetero-junction TFET for low power and RF applications.

Authors: Dharmender¹, Nigam, Kaushal Kumar², Yadav, Piyush¹, Kumar, Amit¹, amitkatyal101@gmail.com

Source: International Journal of Electronics; Apr2024, Vol. 111 Issue 4, p599-615, 17p

Theoretical Investigation of Dual-Material Stacked Gate Oxide-Source Dielectric Pocket TFET Based on Interface Trap Charges and Temperature Variations.

Authors: Nigam, Kaushal Kumar¹ (AUTHOR) kknigam.etc@nitrr.ac.in, Dharmender² (AUTHOR) dharmender.nishad@glbitm.ac.in, Tikkiwal, Vinay Anand³ (AUTHOR) vinay.anand@jiit.ac.in, Bind, Mukesh Kumar³ (AUTHOR) mukesh.bind@jiit.ac.in

Source: Journal of Circuits, Systems & Computers. Oct2023, Vol. 32 Issue 15, p1-31. 31p.

Subject Terms: *DIELECTRICS, *CARRIER density, *INTERMODULATION distortion, *FIELD-effect transistors, *HIGH temperatures, *THRESHOLD voltage, *METAL oxide semiconductor field-effect transistors

GaAs/Ge polarity controlled TFET biosensor for SARS-CoV-2 detection: a simulation-based study.

Authors: Bind, Mukesh Kumar¹ (AUTHOR) mukesh.bind@jiit.ac.in, Singh, Sajai Vir (AUTHOR), Nigam, Kaushal Kumar (AUTHOR)

Source: Microsystem Technologies. Dec2024, p1-17.