Showing 1 - 10 results of 10 Refine Results
  1. 1
    Conference

    First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method

    Authors: Kosugi, Ryoji, Sakuma, Yuuki, Kojima, Kazutoshi, Itoh, Sachiko, Nagata, Akiyo, Yatsuo, Tsutomu, Tanaka, Yasunori, Okumura, Hajime

    Source: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on. :346-349 Jun, 2014

    Relation: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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  2. 2
    Academic Journal

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  3. 3
    Periodical

    A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches

    Authors: Ji, Shi Yang, Kosugi, Ryoji, Kojima, Kazutoshi, Adachi, Kohei, Kawada, Yasuyuki, Mochizuki, Kazuhiro, Nagata, Akiyo, Matsukawa, Yasuko, Yonezawa, Yoshiyuki, Yoshida, Sadafumi, Okumura, Hajime

    Source: Materials Science Forum; July 2019, Vol. 963 Issue: 1 p131-135, 5p

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  4. 4
    Periodical

    CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode

    Authors: Ji, Shi Yang, Kosugi, Ryoji, Kojima, Kazutoshi, Mochizuki, Kazuhiro, Kawada, Yasuyuki, Adachi, Kohei, Saito, Shingo, Nagata, Akiyo, Matsukawa, Yasuko, Yonezawa, Yoshiyuki, Yoshida, Sadafumi, Okumura, Hajime

    Source: Materials Science Forum; June 2018, Vol. 924 Issue: 1 p116-119, 4p

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  5. 5
    Academic Journal

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  6. 6
    Periodical

    Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth

    Authors: Kosugi, Ryoji, Sakuma, Yuuki, Kojima, Kazutoshi, Itoh, Sachiko, Nagata, Akiyo, Yatsuo, Tsutomu, Tanaka, Yasunori, Okumura, Hajime

    Source: Materials Science Forum; February 2014, Vol. 778 Issue: 1 p845-850, 6p

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  7. 7
    Periodical

    Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate

    Authors: Kojima, Kazutoshi, Masumoto, Keiko, Ito, Sachiko, Nagata, Akiyo, Okumura, Hajime

    Source: Materials Science Forum; February 2014, Vol. 778 Issue: 1 p125-130, 6p

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  8. 8
    Periodical

    Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth

    Authors: Kosugi, Ryoji, Sakuma, Yuuki, Kojima, Kazutoshi, Itoh, Sachiko, Nagata, Akiyo, Yatsuo, Tsutomu, Tanaka, Yasunori, Okumura, Hajime

    Source: Materials Science Forum; January 2013, Vol. 740 Issue: 1 p785-788, 4p

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  9. 9
    Periodical

    Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle

    Authors: Kojima, Kazutoshi, Ito, Satchiko, Nagata, Akiyo, Okumura, Hajime

    Source: Materials Science Forum; May 2012, Vol. 717 Issue: 1 p141-144, 4p

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  10. 10
    Periodical

    An empirical growth window concerning the input ratio of HCl/SiH4gases in filling 4H-SiC trench by CVD

    Authors: Ji, Shiyang, Kosugi, Ryoji, Kojima, Kazutoshi, Mochizuki, Kazuhiro, Saito, Shingo, Nagata, Akiyo, Matsukawa, Yasuko, Yonezawa, Yoshiyuki, Yoshida, Sadafumi, Okumura, Hajime

    Source: Applied Physics Express (APEX); May 2017, Vol. 10 Issue: 5 p055505-055505, 1p

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