High mobility InAs/AlInAs metamorphic heterostructures on InP(001)

Authors: Wallart, X., Lastennet, J., Mollot, F.

Source: International Conference on Indium Phosphide and Related Materials, 2005 Indium Phosphate and Related Materials Indium Phosphide and Related Materials, 2005. International Conference on. :94-97 2005

Relation: 2005 International Conference on Indium Phosphate And Related Materials

Multi-4 in. production MBE system review for the growth of mixed P-based heterostructures, for optoelectronic applications

Authors: Wilk, A., Godey, S., Marcadet, X., Gerard, P., Mollot, F., Chaix, C.

Source: International Conference on Indium Phosphide and Related Materials, 2005 Indium Phosphate and Related Materials Indium Phosphide and Related Materials, 2005. International Conference on. :495-498 2005

Relation: 2005 International Conference on Indium Phosphate And Related Materials

Two-photon absorption in InP substrates in the 1.55 /spl mu/m range

Authors: Vignaud, D., Lampin, J.F., Mollot, F.

Source: 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on. :134-137 2004

Relation: 2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM

Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system

Authors: Dhellemmes, S., Godey, S., Wilk, A., Wallart, X., Mollot, F.

Source: 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on. :159-162 2004

Relation: 2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

Authors: Lefebvre, E., Zaknoune, M., Cordier, Y., Mollot, F.

Source: International Conference onIndium Phosphide and Related Materials, 2003. Indium phosphide and related materials Indium Phosphide and Related Materials, 2003. International Conference on. :409-412 2003

Relation: International Conference on Indium Phosphide and Related Materials

High uniformity and high quality P-based heterostructures grown by a production MBE system for optoelectronics applications

Authors: Wilk, A., Godey, S., Gerard, P., Chaix, C., Mollot, F.

Source: International Conference onIndium Phosphide and Related Materials, 2003. Indium phosphide and related materials Indium Phosphide and Related Materials, 2003. International Conference on. :421-424 2003

Relation: International Conference on Indium Phosphide and Related Materials

Electron lifetime of heavily Be-doped In/sub 0.53/Ga/sub 0.47/As as a function of growth temperature and doping

Authors: Vignaud, D., Lampin, J.F., Lefebvre, E., Zaknoune, M., Mollot, F.

Source: Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :503-506 2002

Relation: Proceedings of 14th Indium Phosphide and Related Materials Conference (IPRM)

Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor

Authors: Lefebvre, E., Zaknoune, M., Mollot, F.

Source: Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :615-618 2002

Relation: Proceedings of 14th Indium Phosphide and Related Materials Conference (IPRM)

An ultra-wide bandwidth photomixer with down conversion at terahertz frequency

Authors: Peytavit, E., Arscott, S., Lippens, D., Mouret, G., Masselin, P., Matton, S., Bocquet, R., Lampin, J.F., Desplanque, L., Mollot, F.

Source: Proceedings, IEEE Tenth International Conference on Terahertz Electronics Terahertz electronics Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on. :23-26 2002

Relation: THz 2002. 2002 IEEE Tenth International Conference on Terahertz Electronics Proceedings

Growth of strained Ga/sub 1-x/In/sub x/P layers on gap [001] by gas source molecular ream epitaxy: c

Authors: Wallart, X., Deresmes, D., Mollot, F.

Source: Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) Indium phosphide and related materials Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on. :231-234 2000

Relation: Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials

(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barrier layer grown by gas source molecular beam epitaxy for V-band (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As/GaAs power pseudomorphic HEMT

Authors: Zaknoune, M., Schuler, O., Wallart, X., Piotrowicz, S., Mollot, F., Theron, D., Crosnier, Y.

Source: Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) Indium phosphide and related materials Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on. :353-356 2000

Relation: Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials

Composite channel HEMTs for millimeter-wave power applications

Authors: Chevalier, P., Wallart, X., Mollot, F., Bonte, B., Fauquembergue, R.

Source: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) Indium phosphide and related materials Indium Phosphide and Related Materials, 1998 International Conference on. :207-210 1998

Relation: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials

An experimental study of the relaxation behaviour of strained Ga/sub 1-x/In/sub x/P layers grown on GaAs

Authors: Schuler, O., Wallart, X., Mollot, F.

Source: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) Indium phosphide and related materials Indium Phosphide and Related Materials, 1998 International Conference on. :615-618 1998

Relation: Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials

Heterostructure barrier quantum well varactor

Authors: Duez, V., Melique, X., Havart, R., Podevin, F., Mounaix, P., Mollot, F., Vanbesien, O., Lippens, D.

Source: 1998 IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) Terahertz electronics Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on. :62-65 1998

Relation: Proceedings of 6th International Conference on Terahertz Electronics

Integrated Horn Antenna for THz Photomixing in LTG-GaAs

Authors: Peytavit, E., Lampin, J.-F., Akalin, T., Mollot, F., Hindle, F., Yang, C., Mouret, G.

Source: 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on. :1-2 Sep, 2008

Relation: 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008)

Terahertz photomixing in InP/InGaAs UTC-PD integrated with TEM horn antennas

Authors: Beck, A., Zaknoune, M., Peytavit, E., Akalin, T., Ducournau, G., Lampin, J.-F., Mollot, F., Hindle, F., Yang, C., Mouret, G.

Source: 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on. :1-2 Sep, 2008

Relation: 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008)

Current gain enhancement in GaAsSb/InP - DHBT type grown by MBE with a graded composition AlInP emitter

Authors: Zaknoune, M., Colder, H., Yarekha, D. A., Dambrine, G., Mollot, F.

Source: 2008 20th International Conference on Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on. :1-3 May, 2008

Relation: 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM)

Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler

Authors: Melique, X., Maestrini, A., Farre, R., Mounaix, P., Favreau, M., Vanbesien, O., Goutoule, J.-M., Mollot, F., Beaudin, G., Narhi, T., Lippens, D.

Source: IEEE Transactions on Microwave Theory and Techniques IEEE Trans. Microwave Theory Techn. Microwave Theory and Techniques, IEEE Transactions on. 48(6):1000-1006 Jun, 2000

Picosecond pulse generation and photomixing with Uni-Travelling-Carrier PhotoDiode

Authors: Beck, A., Lampin, J.-F., Zaknoune, M., Peytavit, E., Akalin, T., Desplanque, L., Mollot, F.

Source: 2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on. :200-201 Sep, 2007

Relation: 2007 Joint 32nd International Conference on Infrared and Millimeter Waves and 15th International Conference on Terahertz Electronics

Electron lifetime of heavily C-doped InGaAs and GaAsSb as a function of doping density

Authors: Vignaud, D., Yarekha, D.A., Lampin, J.F., Zaknoune, M., Godey, S., Mollot, F.

Source: 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on. :586-587 May, 2007

Relation: 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials