Coulomb Blockade in Thin SOI Nanodevices

Authors: Fraboulet, D., Jehl, X., Mariolle, D., Le Royer, C., Le Carval, G., Scheiblin, P., Rivallin, P., Mollard, L., Deleroyelle, D., Nier, M.E., Toffoli, A., Molas, G., De Salvo, B., Deleonibus, S., Sanquer, M.

Source: 32nd European Solid-State Device Research Conference Solid-State Device Research Conference, 2002. Proceeding of the 32nd European. :395-398 2002

Relation: 32nd European Solid-State Device Research Conference

Intra-chip optical interconnects with compact and low-loss light distribution in silicon-on-insulator rib waveguides

Authors: Cassan, E., Lardenois, S., Pascal, D., Vivien, L., Heitzmann, M., Bouzaida, N., Mollard, L., Orobtchouk, R., Laval, S.

Source: Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Interconnect technology Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International. :39-41 2003

Relation: IEEE International Interconnect Technology Conference

Optical interconnects on SOI: a front end approach

Authors: Orobtchouk, R., Schnell, N., Benyattou, T., Lardenois, S., Pascal, D., Cordat, A., Laval, S., Cassan, E., Koster, A., Bouchier, D., Bouzaida, N., Dal'zotto, B., Florin, B., Heitzmann, M., Lamouchi, Z., Louis, D., Mollard, L., Renaud, D., Gautier, J.

Source: Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519) Interconnect technology conference Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International. :83-85 2002

Relation: Proceedings of the IEEE 2002 International Interconnect Technology Conference

Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation.

Authors: Mollard, L., Destefanis, G., Baier, N.

Source: Journal of Electronic Materials; Aug2009, Vol. 38 Issue 8, p1805-1813, 9p

Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe.

Authors: Gravrand, O., Mollard, L., Largeron, C.

Source: Journal of Electronic Materials; Aug2009, Vol. 38 Issue 8, p1733-1740, 8p

Lithography process development for 20 nm MOSFET devices

Authors: Mollard, L., Dal'zotto, B., Tedesco, S., Bertrand, G.

Source: 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and nanotechnology Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International. :124-125 2002

Relation: Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International Microprocesses and Nanotechnology Conference

Shockley–Haynes Characterization of Minority-Carrier Drift Velocity, Diffusion Coefficient, and Lifetime in HgCdTe Avalanche Photodiodes
Physics and chemistry of II-VI materials

Authors: Rothman, J., Vojetta, G., Moselle, B., Mollard, L., Gout, S., Chamonal, J. P.

Source: JOURNAL OF ELECTRONIC MATERIALS. 39(7):837-845

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN076882196&indx=1&recIds=ETOCCN076882196

Study of the Transit-Time Limitations of the Impulse Response in Mid-Wave Infrared HgCdTe Avalanche Photodiodes
Physics and chemistry of II-VI materials; Special issue: 2008 US workshop

Authors: Perrais, G., Derelle, S., Mollard, L., Chamonal, J. P., Destefanis, G., Vincent, G., Bernhardt, S., Rothman, J.

Source: JOURNAL OF ELECTRONIC MATERIALS. 38(8):1790-1799

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN074273361&indx=1&recIds=ETOCCN074273361

High-Operating-Temperature HgCdTe Avalanche Photodiodes
Physics and chemistry of II-VI materials; Special issue: 2008 US workshop

Authors: Rothman, J., Baier, N., Ballet, P., Mollard, L., Fournier, M., Gout, J. S., Chamonal, J. P.

Source: JOURNAL OF ELECTRONIC MATERIALS. 38(8):1707-1716

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Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec
Physics and chemistry of II-VI materials

Authors: Rothman, J., Perrais, G., Ballet, P., Mollard, L., Gout, S., Chamonal, J.-P.

Source: JOURNAL OF ELECTRONIC MATERIALS. 37(9):1303-1310

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From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n + n −/p Ion Implantation Technology
Physics and chemistry of II-VI materials

Authors: Gravrand, O., Borniol, E., Bisotto, S., Mollard, L., Destefanis, G.

Source: JOURNAL OF ELECTRONIC MATERIALS. 36(8):981-987

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN066352467&indx=1&recIds=ETOCCN066352467

Gaussian beam writing strategy: accuracy of using the shape beam simulator SELID for Gaussian beam systems [5835-10]
European mask and lithography conference; EMLC 2005

Authors: Tortai, J. H., Thiault, J., Tiron, R., Mollard, L., Haefele, S., Vychub, S., Lewellen, J., Brooker, P.

Source: PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING. 5835:82-88

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HSQ hybrid lithography for 20 nm CMOS devices development
International conference on micro- and nano-engineering; Micro- and nano- engineering 2001 MNE

Authors: Mollard, L., Cunge, G., Tedesco, S., Dal zotto, B., Foucher, J.

Source: MICROELECTRONIC ENGINEERING. 61-62:755-762

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN047156658&indx=1&recIds=ETOCCN047156658

Hybrid deep UV-e-beam lithography for the fabrication of dual damascene structures
Micro- and nanoengineering

Authors: Mollard, L., Tedesco, S., Dal zotto, B., Jaubert, V., Pain, L., Fanget, G., Comboroure, C.

Source: MICROELECTRONIC ENGINEERING. 57-58:269-275

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Quantitative damage depth profiles in arsenic implanted HgCdTe

Authors: Lobre, C., Jalabert, D., Vickridge, I., Briand, E., Benzeggouta, D., Mollard, L., Jouneau, P.H., Ballet, P.

Source: In Nuclear Inst. and Methods in Physics Research, B 15 October 2013 313:76-80

Latest Developments in Long-Wavelength and Very-Long-Wavelength Infrared Detection with p-on-n HgCdTe

Authors: Baier, N., Cervera, C., Gravrand, O., Mollard, L., Lobre, C., Destefanis, G., Bourgeois, G., Zanatta, J. P., Boulade, O., Moreau, V.

Source: JOURNAL OF ELECTRONIC MATERIALS. 44(9):3144-3150

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Characterization of the Microstructure of HgCdTe with p-Type Doping

Authors: Lobre, C., Jouneau, P. H., Mollard, L., Ballet, P.

Source: JOURNAL OF ELECTRONIC MATERIALS. 43(8):2908-2914

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p-on-n HgCdTe Infrared Focal-Plane Arrays: From Short-Wave to Very-Long-Wave Infrared

Authors: Mollard, L., Bourgeois, G., Lobre, C., Gout, S., Viollet-Bosson, S., Baier, N., Destefanis, G., Gravrand, O., Barnes, J. P., Milesi, F.

Source: JOURNAL OF ELECTRONIC MATERIALS. 43(3):802-807

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Biaxial Piezoelectric MEMS Mirrors with Low Absorption Coating for 1550 nm Long-Range LIDAR.

Authors: Mollard, L., Riu, J., Royo, S., Dieppedale, C., Hamelin, A., Koumela, A., Verdot, T., Frey, L., Le Rhun, G., Castellan, G., Licitra, C.

Source: Micromachines; May2023, Vol. 14 Issue 5, p1019, 13p

Subject Terms: PIEZOELECTRIC thin films, VERY large scale circuit integration, OPTICAL radar, LEAD zirconate titanate, LIDAR, BRAGG gratings, PIEZOELECTRIC motors, MIRRORS

The Achilles Heel of Liver Transplantation

Authors: Chahdi Beltrame, M., del Bueno, M.L., Cervantes, G., Mollard, L., Lenz, M., Quiñonez, E., Mattera, F.J.

Source: HPB. 24(S1):S579-S579

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100171491232.0x000001&indx=1&recIds=ETOCvdc_100171491232.0x000001