Analysis of Dependence of Breakdown Voltage on Gate–Drain Distance in AlGaN/GaN HEMTs With High-k Passivation Layer

Authors: Tomita, R., Ueda, S., Kawada, T., Mitsuzono, H., Horio, K.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(4):1550-1556 Apr, 2021