High mobility Si-Ge channels and novel high-k materials for nanomosfets

Authors: Yu, W., Zhang, B., Durgun-Ozben, E., Minamisawa, R.A., Luptak, R., Hagedorn, M., Hollander, B., Schubert, J., Hartmann, J.M., Bourdelle, K.K., Zhao, Q.T., Buca, D., Mantl, S.

Source: CAS 2010 Proceedings (International Semiconductor Conference) Semiconductor Conference (CAS), 2010 International. 01:57-62 Oct, 2010

Relation: 2010 International Semiconductor Conference (CAS 2010)

Electret Pattern Fornation in Teflon by Pyroeletric and Photogalvanic Electron Emission From LiNbO3

Authors: Minamisawa, R.A., Parada, M.A., de Almeida, A., Kukhtarev, N., Kukhtareva, T., Zimmerman, R.L.

Source: 2005 12th International Symposium on Electrets Electrets Electrets, 2005. ISE-12. 2005 12th International Symposium on. :168-171 2005

Relation: 12th International Symposium on Electrets

Advances in Si & Ge millisecond processing: From silicon-on-insulator to superconducting Ge

Authors: Skorupa, W., Heera, V., Herrmannsdorfer, T., Posselt, M., Buca, D., Minamisawa, R.A., Mantl, S., Anwand, W., Gebel, Th.

Source: 2009 17th International Conference on Advanced Thermal Processing of Semiconductors Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on. :1-10 Sep, 2009

Relation: 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP)

Ultra-Thin Epitaxial Tungsten Carbide Schottky Contacts in 4H-SiC

Authors: Knoll, L., Teodorescu, V., Minamisawa, R.A.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 37(10):1318-1320 Oct, 2016

Current Sharing Behavior in Si IGBT and SiC MOSFET Cross-Switch Hybrid

Authors: Minamisawa, R.A., Vemulapati, U., Mihaila, A., Papadopoulos, C., Rahimo, M.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 37(9):1178-1180 Sep, 2016

Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid

Authors: Rahimo, M., Canales, F., Minamisawa, R.A., Papadopoulos, C., Vemulapati, U., Mihaila, A., Kicin, S., Drofenik, U.

Source: IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 30(9):4638-4642 Sep, 2015

Formation of Insulated-Gate Bipolar Transistor Highly Activated Anodes via Nickel Silicidation With Dopant Segregation

Authors: Minamisawa, R.A., Papadopoulos, C., Jabrany, R., Knoll, L., Corvasce, C., Rahimo, M.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 36(5):487-489 May, 2015

Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

Authors: Schmidt, M., Schafer, A., Minamisawa, R.A., Buca, D., Trellenkamp, S., Hartmann, J., Zhao, Q., Mantl, S.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 35(7):699-701 Jul, 2014

Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes

Authors: Rossmann, H.R., Bubendorf, A., Zanella, F., Marjanović, N., Schnieper, M., Meyer, E., Jung, T.A., Gobrecht, J., Minamisawa, R.A., Bartolf, H.

Source: In Microelectronic Engineering 1 September 2015 145:166-169

Thermoelectric properties of Zn4Sb3/CeFe(4−x)CoxSb12 nano-layered superlattices modified by MeV Si ion beam

Authors: Budak, S., Guner, S., Minamisawa, R.A., Muntele, C.I., Ila, D.

Source: In Applied Surface Science 15 August 2014 310:226-229

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Authors: Schmidt, M., Minamisawa, R.A., Richter, S., Luptak, R., Hartmann, J.-M., Buca, D., Zhao, Q.T., Mantl, S.

Source: In Solid State Electronics May 2012 71:42-47

High mobility strained Si 0.5Ge 0.5/SSOI short channel field effect transistors with TiN/GdScO 3 gate stack

Authors: Minamisawa, R.A., Schmidt, M., Durgun Özben, E., Lopes, J.M.J., Hartmann, J.M., Bourdelle, K.K., Schubert, J., Zhao, Q.T., Buca, D., Mantl, S.

Source: In Microelectronic Engineering 2011 88(9):2955-2958

Study of Arsenic ion implantation of patterned strained Si NWs

Authors: Minamisawa, R.A., Habicht, S., Knoll, L., Zhao, Q.T., Buca, D., Mantl, S., Köhler, F., Carius, R.

Source: In Solid State Electronics 2011 60(1):31-36

MeV Si ions bombardment effects on the thermoelectric properties of nano-layers of nanoclusters of Ag in SiO 2 host

Authors: Budak, S., Guner, S., Minamisawa, R.A., ILA, D.

Source: In Surface & Coatings Technology 2009 203(17):2479-2481

Surface modification of Si/Ge multi-layers by MeV Si ion bombardment

Authors: Budak, S., Guner, S., Smith, C., Minamisawa, R.A., Zheng, B., Muntele, C., Ila, D.

Source: In Surface & Coatings Technology 2009 203(17):2418-2421

Effects of MeV Si ions bombardments on thermoelectric properties of sequentially deposited BixTe3/Sb2Te3 nano-layers

Authors: Budak, S., Muntele, C.I., Minamisawa, R.A., Chhay, B., Ila, D.

Source: In Nuclear Inst. and Methods in Physics Research, B August 2007 261(1-2):608-611

Effects of low and high energy ion bombardment on ETFE polymer

Authors: Minamisawa, R.A., De Almeida, A., Abidzina, V., Parada, M.A., Muntele, I., Ila, D.

Source: In Nuclear Inst. and Methods in Physics Research, B April 2007 257(1-2):568-571

Investigations of low-energy ion irradiation influence on glassy polymeric carbon

Authors: Abidzina, V., Tereshko, I., Elkin, I., Muntele, I., Muntele, C., Minamisawa, R.A., Ila, D.

Source: In Nuclear Inst. and Methods in Physics Research, B April 2007 257(1-2):523-526

Damage effects of gamma and X-rays in polymer film electrets

Authors: Parada, M.A., Minamisawa, R.A., Moreira, M.V., de Almeida, A., Muntele, I., Ila, D.

Source: In Surface & Coatings Technology 2007 201(19):8246-8249

Digital Image Analysis to Standardize a Photometric Method in Colorimetric Quantification.

Authors: Minamisawa, R.A.¹ (AUTHOR) renato@aamu.edu, Santos, L.E. R.² (AUTHOR), Parada, M.A.³ (AUTHOR), Daghastanli, K.R. P.² (AUTHOR), Ciancaglini, P.² (AUTHOR), De Almeida, A.³ (AUTHOR)

Source: Instrumentation Science & Technology. Jan/Feb2008, Vol. 36 Issue 1, p97-104. 8p. 1 Diagram, 1 Chart, 5 Graphs.

Subject Terms: *IMAGE analysis, *DIGITAL images, *PHOTOMETRY, *ELECTROMAGNETIC measurements, *CALORIMETRY, *OPACITY (Optics)