56 nm pitch copper dual-damascene interconnects with triple pitch split metal and double pitch split via

Authors: Chen, James Hsueh-Chung, Waskiewicz, Christopher, Fan, Susan Su-Chen, Halle, Scott, Koay, Chiew-seng, Xu, Yongan, Saulnier, Nicole, Tseng, Chia-Hsun, Yin, Yunpeng, Mignot, Yann, Beard, Marcy, Morris, Bryan, Horak, Dave, Mignot, Sylvie, Shobha, Hosadurga, Sankarapandian, Muthumanickam, van der Straten, Oscar, Kelly, James J., Canaperi, Donald, Mclellan, Erin, Boye, Carol, Levin, Theodore, Li, Juntao, Demarest, James, Choi, Samuel, Huang, Elbert, Liemann, Lars, Haran, Bala, Arnold, John C, Colburn, Matthew, Clevenger, Larry, Spooner, Terry

Source: 2012 IEEE International Interconnect Technology Conference Interconnect Technology Conference (IITC), 2012 IEEE International. :1-3 Jun, 2012

Relation: 2012 IEEE International Interconnect Technology Conference - IITC

Towards electrical testable SOI devices using Directed Self-Assembly for fin formation

Authors: Resnick, Douglas J., Bencher, Christopher, Liu, Chi-Chun, Estrada-Raygoza, Cristina, He, Hong, Cicoria, Michael, Rastogi, Vinayak, Mohanty, Nihar, Tsai, Hsinyu, Schepis, Anthony, Lai, Kafai, Chao, Robin, Liu, Derrick, Guillorn, Michael, Cantone, Jason, Mignot, Sylvie, Kim, Ryoung-Han, Cheng, Joy, Tjio, Melia, Ko, Akiteru, Hetzer, David, Somervell, Mark, Colburn, Matthew

Source: Proceedings of SPIE; March 2014, Vol. 9049 Issue: 1 p904909-904909-12