Artificial Intelligence for Mass Spectrometry and Nuclear Magnetic Resonance Spectroscopy Using a Novel Data Augmentation Method

Authors: Fricke, F., Brandalero, M., Liehr, S., Kern, S., Meyer, K., Kowarik, S., Hierzegger, R., Westerdick, S., Maiwald, M., Hubner, M.

Source: IEEE Transactions on Emerging Topics in Computing IEEE Trans. Emerg. Topics Comput. Emerging Topics in Computing, IEEE Transactions on. 10(1):87-98 Jan, 2022

Intentionally Intensify Classroom Practices to Support Students with Disabilities

Authors: Simonsen, B., Plumb, A., Duble Moore, T., Meyer, K., Sears, S., Center on Positive Behavioral Interventions and Supports (PBIS)

Source: Center on Positive Behavioral Interventions and Supports. 2023.

Peer Reviewed: N

Page Count: 5

Sponsoring Agency: Office of Special Education Programs (OSEP) (ED/OSERS)
Office of Elementary and Secondary Education (OESE) (ED)

Descriptors: Students with Disabilities, Classroom Techniques, Teaching Methods, Student Behavior, Positive Behavior Supports, Program Effectiveness, Inclusion, Elementary School Teachers, Prompting, Learner Engagement, Positive Reinforcement

Access URL: https://cdn.prod.website-files.com/5d3725188825e071f1670246/64cbec81b1e9d945c75b5e2a_Intentionally_Intensifying_Classrooom_Practices_to_Support_Students_with_Disabilites.pdf

Oxygen Gettering Cap to Scavenge Parasitic Oxide Interlayer in TiSi Contacts

Authors: Yu, H., Schaekers, M., Wang, L., Everaert, J., Jiang, Y., Mocuta, D., Horiguchi, N., Collaert, N., De Meyer, K.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 40(11):1712-1715 Nov, 2019

Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 as Contact

Authors: Zhang, J., Wang, L., Yu, H., Merckling, C., Mols, Y., Vais, A., Ramesh, S., Ivanov, T., Schaekers, M., Horiguchi, N., Mocuta, D., Collaert, N., De Meyer, K., Jiang, Y.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 40(11):1800-1803 Nov, 2019

Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-Incorporated La/Ultrathin TiSix on n-Si

Authors: Wang, L., Yu, H., Schaekers, M., Everaert, J., Mocuta, D., Horiguchi, N., Collaert, N., De Meyer, K., Jiang, Y.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(5):1869-1872 May, 2018

Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal

Authors: Chew, S-A., Yu, H., Schaekers, M., Demuynck, S., Mannaert, G., Kunnen, E., Rosseel, E., Hikavyy, A., Dangol, A., Meyer, K. De, Mocuta, D., Horiguchi, N., Leusink, G., Wajda, C., Hakamata, T., Hasegawa, T., Tapily, K., Clark, R.

Source: 2017 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2017 IEEE International. :1-3 May, 2017

Relation: 2017 IEEE International Interconnect Technology Conference (IITC)

Are Fewer Students with Disabilities Suspended When Schools Implement PBIS?

Authors: Simonsen, B., Freeman, J., Gambino, A. J., Sears, S., Meyer, K., Hoselton, R., Center on Positive Behavioral Interventions and Supports (PBIS)

Source: Center on Positive Behavioral Interventions and Supports. 2021.

Peer Reviewed: N

Page Count: 6

Sponsoring Agency: Office of Special Education Programs (OSEP) (ED/OSERS)
Office of Elementary and Secondary Education (OESE) (ED)

Descriptors: Incidence, Students with Disabilities, Suspension, Positive Behavior Supports, Outcomes of Treatment, Program Evaluation, Program Implementation, Fidelity

Access URL: https://assets-global.website-files.com/5d3725188825e071f1670246/619406e48464bb634ff7f6db_Are%20Fewer%20Students%20with%20Disabilities%20Suspended%20When%20Schools%20Implement%20PBIS%20(1).pdf

Contact reliability improvement of a poly-SiGe based nano-relay with titanium nitride coating

Authors: Ramezani, M., Severi, S., Moussa, A., Osman, H., Tilmans, H. A. C., De Meyer, K.

Source: 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on. :576-579 Jun, 2015

Relation: TRANSDUCERS 2015 - 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference

Lateral NWFET optimization for beyond 7nm nodes

Authors: Yakimets, D., Jang, D., Raghavan, P., Eneman, G., Mertens, H., Schuddinck, P., Mallik, A., Bardon, M. Garcia, Collaert, N., Mercha, A., Verkest, D., Thean, A., De Meyer, K.

Source: 2015 International Conference on IC Design & Technology (ICICDT) IC Design & Technology (ICICDT), 2015 International Conference on. :1-4 Jun, 2015

Relation: 2015 International Conference on IC Design & Technology (ICICDT)

Stretched Amplitude Decaying Fourier Modes in the Jet Far-Field
9th European turbulence conference

Authors: Hodžić, Azur, Meyer, K. E., George, W. K., Velte, Clara M.

Source: Springer proceedings in physics. 267:231-236

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN607214632&indx=1&recIds=ETOCCN607214632

Process options to enable (sub-)1e-9 Ohm.cm2 contact resistivity on Si devices

Authors: Yu, H., Schaekers, M., Demuynck, S., Rosseel, E., Everaert, J., Chew, S. A., Peter, A., Kubicek, S., Barla, K., Mocuta, A., Horiguchi, N., Collaert, N., Thean, A. V. -Y., De Meyer, K.

Source: 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC) Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016 IEEE International. :66-68 May, 2016

Relation: 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)

TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe

Authors: Yu, H., Schaekers, M., Zhang, J., Wang, L., Everaert, J., Horiguchi, N., Jiang, Y., Mocuta, D., Collaert, N., De Meyer, K.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 64(2):500-506 Feb, 2017

Feasibility of InxGa1–xAs High Mobility Channel for 3-D NAND Memory

Authors: Capogreco, E., Subirats, A., Lisoni, J.G., Arreghini, A., Kunert, B., Guo, W., Tan, C., Delhougne, R., Van den bosch, G., De Meyer, K., Furnemont, A., Van Houdt, J.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 64(1):130-136 Jan, 2017

PBIS Academy Model Demo Brief: Impact of Statewide Support Model on High-Needs Schools

Authors: Feinberg, A. B., Meyer, K. A., Everett, S., Robbie, K., Pierce, A., Shor, R., Ricotta, A., Fischer, S., Center on Positive Behavioral Interventions and Supports (PBIS)

Source: Center on Positive Behavioral Interventions and Supports. 2021.

Peer Reviewed: N

Page Count: 9

Sponsoring Agency: Office of Special Education Programs (ED/OSERS)
Office of Elementary and Secondary Education (ED)

Descriptors: Positive Behavior Supports, Program Evaluation, Program Effectiveness, Program Implementation, Fidelity, Models, Faculty Development, Training, School Districts, Discipline

Geographic Terms: Massachusetts

Access URL: https://assets-global.website-files.com/5d3725188825e071f1670246/6091c779abef8b6027259dbd_PBIS%20Academy%20Model%20Demo%20Brief%20FInal2%5B18%5D.pdf

Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2

Authors: Yu, H., Schaekers, M., Peter, A., Pourtois, G., Rosseel, E., Lee, J., Song, W., Shin, K.M., Everaert, J., Chew, S.A., Demuynck, S., Kim, D., Barla, K., Mocuta, A., Horiguchi, N., Thean, A.V., Collaert, N., De Meyer, K.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 63(12):4632-4641 Dec, 2016

Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO2/n-Si Contact

Authors: Yu, H., Schaekers, M., Schram, T., Demuynck, S., Horiguchi, N., Barla, K., Collaert, N., Thean, A.V., De Meyer, K.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 63(7):2671-2676 Jul, 2016

Advanced Tiers in High School: Lessons Learned from Initial Implementation

Authors: Meyer, K., Everett, S., Handler, M., Freeman, J., Center on Positive Behavioral Interventions and Supports (PBIS)

Source: Center on Positive Behavioral Interventions and Supports. 2021.

Peer Reviewed: N

Page Count: 7

Sponsoring Agency: Office of Special Education Programs (ED/OSERS)
Office of Elementary and Secondary Education (ED)

Descriptors: Positive Behavior Supports, High School Students, Program Implementation, School Personnel, Data Use, Decision Making, Intervention, Faculty Development, Communities of Practice, Social Emotional Learning, Mental Health

Geographic Terms: Massachusetts

Access URL: https://assets-global.website-files.com/5d3725188825e071f1670246/6091c89afbc0a53c239f1d6c_HS_ATA_Lessons_Learned_FINAL_3.8.21.pdf

Design of SiGe Nano-Electromechanical relays for logic applications

Authors: Rochus, V., Ramezani, M., Cosemans, S., Severi, S., Witvrouw, A., De Meyer, K., Tilmans, H.A.C., Rottenberg, X.

Source: 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2013 14th International Conference on. :1-7 Apr, 2013

Relation: 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

Design of interleaved interdigitated electrode multilayer piezoelectric transformer utilizing longitudinal and thickness mode vibrations

Authors: Rodgaard, M. S., Andersen, T., Andersen, M. A. E., Meyer, K. S.

Source: 2012 IEEE International Conference on Power and Energy (PECon) Power and Energy (PECon), 2012 IEEE International Conference on. :38-43 Dec, 2012

Relation: 2012 IEEE International Conference on Power and Energy (PECon)

Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation

Authors: Everaert, J-L., Schaekers, M., Yu, H., Wang, L.-L., Hikavyy, A., Date, L., del Agua Borniquel, J., Hollar, K., Khaja, F. A., Aderhold, W., Mayur, A. J., Lee, J. Y., van Meer, H., Jiang, Y.-L., De Meyer, K., Mocuta, D., Horiguchi, N.

Source: 2017 Symposium on VLSI Technology VLSI Technology, 2017 Symposium on. :T214-T215 Jun, 2017

Relation: 2017 Symposium on VLSI Technology