65nm Cu Integration and Interconnect Reliability in Low Stress K=2.75 SiCOH

Authors: McGahay, V., Bonilla, G., Chen, F., Christiansen, C., Cohen, S., Cullinan-Scholl, M., Demarest, J., Dunn, D., Engel, B., Fitzsimmons, J., Gill, J., Grunow, S., Herbst, B., Hichri, H., Ida, K., Klymko, N., Kiene, M., Labelle, C., Lee, T., Liniger, E., Liu, X.H., Madan, A., Malone, K., Martin, J., McLaughlin, P.V., Minami, M., Molis, S., Muzzy, C., Nguyen, S., Patel, J.C., Restaino, D., Sakamoto, A., Shaw, T.M., Shimooka, Y., Shobha, H., Simonyi, E., Widodo, J., Grill, A., Hannon, R., Lane, M., Nye, H., Spooner, T., Wisnieff, R., Ivers, T.

Source: 2006 International Interconnect Technology Conference Interconnect Technology Conference, 2006 International. :9-11 2006

Relation: 2006 International Interconnect Technology Conference

Reliability evaluation of multilevel thin film structures

Authors: Longworth, H.P., Perfecto, E.D., McLaughlin, P.V.

Source: 1994 Proceedings. 44th Electronic Components and Technology Conference Electronic components and technology Electronic Components and Technology Conference, 1994. Proceedings., 44th. :482-486 1994

Relation: 1994 Proceedings. 44th Electronic Components and Technology Conference

High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

Authors: Lee, W.-H., Waite, A., Nii, H., Nayfeh, H.M., McGahay, V., Nakayama, H., Fried, D., Chen, H., Black, L., Bolam, R., Cheng, J., Chidambarrao, D., Christiansen, C., Cullinan-Scholl, M., Davies, D.R., Domenicucci, A., Fisher, P., Fitzsimmons, J., Gill, J., Gribelyuk, M., Harmon, D., Holt, J., Ida, K., Kiene, M., Kluth, J., Labelle, C., Madan, A., Malone, K., McLaughlin, P.V., Minami, M., Mocuta, D., Murphy, R., Muzzy, C., Newport, M., Panda, S., Peidous, I., Sakamoto, A., Sato, T., Sudo, G., VanMeer, H., Yamashita, T., Zhu, H., Agnello, P., Bronner, G., Freeman, G., Huang, S.-F., Ivers, T., Luning, S., Miyamoto, K., Nye, H., Pellerin, J., Rim, K., Schepis, D., Spooner, T., Chen, X., Khare, M., Horstmann, M., Wei, A., Kammler, T., Hontschel, J., Bierstedt, H., Engelmann, H.-J., Hellmich, A., Hempel, K., Koerner, G., Neu, A., Otterbach, R., Reichel, C., Trentsch, M., Press, P., Frohberg, K., Schaller, M., Salz, H., Hohage, J., Ruelke, H., Klais, J., Raab, M., Greenlaw, D., Kepler, N.

Source: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :4 pp.-59 2005

Relation: International Electron Devices Meeting 2005

Chip Package Interaction Results and Modeling for 65 nm CMOS BEOL with C4 Interconnections
Advanced metallization conference

Authors: Farooq, M., Melville, I., Muzzy, C., McLaughlin, P.V., Hannon, R., Ferguson, C., Dubuque, R., Sauter, W., Muncy, J., Questad, D.

Source: ADVANCED METALLIZATION CONFERENCE IN. :631-640

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN069969183&indx=1&recIds=ETOCCN069969183

Chip package interaction evaluation for a high performance 65nm and 45nm CMOS Technology in a stacked die package with C4 and wirebond interconnections.

Authors: Muzzy, C., Danovitch, D., Gagnon, H., Hannon, R., Kinser, E., McLaughlin, P.V., Mongeau, G., Quintal, J.-G., Sylvestre, J., Turcotte, E., Wright, J.

Source: 2008 58th Electronic Components & Technology Conference; 2008, p1472-1475, 4p

Qualification of Low-k 65nm Technology Die with Pb-free Bumps on a 2-2-2 Laminate Package (PBGA) with Pb-free Assembly Processes.

Authors: Ray, S., Muncy, J., McLaughlin, P.V., Nicholls, L.

Source: 2007 Proceedings 57th Electronic Components & Technology Conference; 2007, p1-7, 7p

Chip Package Interaction for 65nm CMOS Technology with C4 Interconnections.

Authors: Farooq, M., Melville, I., Muzzy, C., McLaughlin, P.V., Hannon, R., Sauter, W., Muncy, J., Questad, D., Carey, C., Cullinan-Scholl, M., McGahay, V., Angyal, M., Nye, H., Lane, M., Xiao Hu Liu, Shaw, T., Murray, C.

Source: 2007 IEEE International Interconnect Technology Conference; 2007, p196-198, 3p

Effects of phase geometry and volume fraction on the plane stress limit analysis of a unidirectional fiber-reinforced composite

Authors: Majumdar, Saurindranath, McLaughlin, P.V.

Source: International Journal of Solids and Structures; July-August 1975, Vol. 11 Issue: 7-8 p777-791, 15p

Elastic behavior, brittle failure and plastic flow of filamentary materials

Authors: McLaughlin, P.V., Majumdar, S., Phillips, J.W.

Source: International Journal of Solids and Structures; August 1973, Vol. 9 Issue: 8 p951-965, 15p

Limit behavior of fibrous materials

Authors: McLaughlin, P.V., Batterman, S.C.

Source: International Journal of Solids and Structures; October 1970, Vol. 6 Issue: 10 p1357-1376, 20p

Plastic limit behavior and failure of filament reinforced materials

Authors: McLaughlin, P.V.

Source: International Journal of Solids and Structures; November 1972, Vol. 8 Issue: 11 p1299-1318, 20p

Fatigue damage in notched composite laminates

Authors: Pipes, R.Byron, Kulkarni, S.V., McLaughlin, P.V.

Source: In Materials Science and Engineering 1977 30(2):113-120