Electrical actuation of single-crystal diamond MEMS resonators at high temperatures

Authors: Zilong Zhang, Keyun Gu, Guo Chen, Masataka Imura, Meiyong Liao

Source: Functional Diamond, Vol 4, Iss 1 (2024)

Subject Terms: single-crystal diamond, mems, actuation, high temperature, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: https://doaj.org/toc/2694-1120

Access URL: https://doaj.org/article/b2bbfe090d5345c89f41003af0b10f7d

A high-performance deep reservoir computer experimentally demonstrated with ion-gating reservoirs

Authors: Daiki Nishioka, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

Source: Communications Engineering, Vol 3, Iss 1, Pp 1-12 (2024)

Subject Terms: Engineering (General). Civil engineering (General), TA1-2040

File Description: electronic resource

Relation: https://doaj.org/toc/2731-3395

Access URL: https://doaj.org/article/be4b9341b5234715aa6307f5ab010162

Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection

Authors: Masataka Imura, Manabu Togawa, Masaya Miyahara, Hironori Okumura, Jiro Nishinaga, Meiyong Liao, Yasuo Koide

Source: Functional Diamond, Vol 2, Iss 1, Pp 167-174 (2022)

Subject Terms: diamond, schottky barrier photodiode, deep-ultraviolet light, detector for xenon excimer lamp, detector for protons, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: https://doaj.org/toc/2694-1120

Access URL: https://doaj.org/article/bf79685c0c594ed0b5eae722d65530ce

Inverted input method for computing performance enhancement of the ion-gating reservoir

Authors: Yu Yamaguchi, Daiki Nishioka, Wataru Namiki, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

Source: Applied Physics Express, Vol 17, Iss 2, p 024501 (2024)

Subject Terms: Physics, QC1-999

File Description: electronic resource

Relation: https://doaj.org/toc/1882-0786

Access URL: https://doaj.org/article/0c3edd5b829e4cc294d29cd08b8c5ada

Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination

Authors: Takayoshi Oshima, Masataka Imura, Yuichi Oshima

Source: Applied Physics Express, Vol 17, Iss 8, p 086501 (2024)

Subject Terms: GaN, AlInN, reverse tapering, crystallographic etching, positive beveled edge termination, Physics, QC1-999

File Description: electronic resource

Relation: https://doaj.org/toc/1882-0786

Access URL: https://doaj.org/article/26a6960959ef42f4bd8d4b721be0b220

Tunability of the bandgap of SnS by variation of the cell volume by alloying with A.E. elements

Authors: Fumio Kawamura, Yelim Song, Hidenobu Murata, Hitoshi Tampo, Takehiko Nagai, Takashi Koida, Masataka Imura, Naoomi Yamada

Source: Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)

Subject Terms: Medicine, Science

File Description: electronic resource

Relation: https://doaj.org/toc/2045-2322

Access URL: https://doaj.org/article/3e83567f8dc6490084ebaaaad3292709

Ultrafast-switching of an all-solid-state electric double layer transistor with a porous yttria-stabilized zirconia proton conductor and the application to neuromorphic computing

Authors: Makoto Takayanagi, Daiki Nishioka, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

Source: Materials Today Advances, Vol 18, Iss , Pp 100393- (2023)

Subject Terms: Electric double layer transistor, Proton conductor, Hydrogenated-diamond, Neuromorphic computing, Reservoir computing, Ionics, Materials of engineering and construction. Mechanics of materials, TA401-492

File Description: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S259004982300053X; https://doaj.org/toc/2590-0498

Access URL: https://doaj.org/article/4bd4cbb7c875461f8ba5cc2a66d37357

The electric double layer effect and its strong suppression at Li+ solid electrolyte/hydrogenated diamond interfaces

Authors: Takashi Tsuchiya, Makoto Takayanagi, Kazutaka Mitsuishi, Masataka Imura, Shigenori Ueda, Yasuo Koide, Tohru Higuchi, Kazuya Terabe

Source: Communications Chemistry, Vol 4, Iss 1, Pp 1-11 (2021)

Subject Terms: Chemistry, QD1-999

File Description: electronic resource

Relation: https://doaj.org/toc/2399-3669

Access URL: https://doaj.org/article/dcb48cb3ff364276b8dd0678489d9e9d

Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates

Authors: Jiangwei Liu, Masayuki Okamura, Hisanori Mashiko, Masataka Imura, Meiyong Liao, Ryosuke Kikuchi, Michio Suzuka, Yasuo Koide

Source: Nanomaterials, Vol 13, Iss 7, p 1256 (2023)

Subject Terms: super-high dielectric constant, nanolaminate, ATO, atomic layer deposition, capacitor, double-Schottky contacts, Chemistry, QD1-999

File Description: electronic resource

Relation: https://www.mdpi.com/2079-4991/13/7/1256; https://doaj.org/toc/2079-4991

Access URL: https://doaj.org/article/408d8d2d545f4342ac580b81f4dad5a9

Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium

Authors: Masataka Imura, Hideki Inaba, Takaaki Mano, Nobuyuki Ishida, Fumihiko Uesugi, Yoko Kuroda, Yoshiko Nakayama, Masaki Takeguchi, Yasuo Koide

Source: AIP Advances, Vol 12, Iss 1, Pp 015203-015203-6 (2022)

Subject Terms: Physics, QC1-999

File Description: electronic resource

Relation: https://doaj.org/toc/2158-3226

Access URL: https://doaj.org/article/9f9054acc18245e58732049894240b1c

Optoelectronic characteristics of the Ag-doped Si p-n photodiodes prepared by a facile thermal diffusion process

Authors: Ahmed A. M. El-Amir, Takeo Ohsawa, Satoshi Ishii, Masataka Imura, Hiroyo Segawa, Isao Sakaguchi, Tadaaki Nagao, Kiyoshi Shimamura, Naoki Ohashi

Source: AIP Advances, Vol 9, Iss 5, Pp 055024-055024-5 (2019)

Subject Terms: Physics, QC1-999

File Description: electronic resource

Relation: https://doaj.org/toc/2158-3226

Access URL: https://doaj.org/article/cf5338b197704ca690a70e311de0b79a

High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric

Authors: Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide

Source: APL Materials, Vol 6, Iss 11, Pp 111105-111105-8 (2018)

Subject Terms: Biotechnology, TP248.13-248.65, Physics, QC1-999

File Description: electronic resource

Relation: https://doaj.org/toc/2166-532X

Access URL: https://doaj.org/article/8068a06d5363460284a7f197cfe9f1fb

Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer

Authors: Ryan G. Banal, Masataka Imura, Yasuo Koide

Source: AIP Advances, Vol 5, Iss 9, Pp 097143-097143-8 (2015)

Subject Terms: Physics, QC1-999

File Description: electronic resource

Relation: https://doaj.org/toc/2158-3226

Access URL: https://doaj.org/article/ef588938475b4d339489d3ed63dfb66a

Amorphous silicon diamond based heterojunctions with high rectification ratio

Authors: Boutchich, Mohamed, Alvarez, José, Diouf, Djicknoum, Roca i Cabarrocas, Pere, Liao, Meiyong, Masataka, Imura, Koide, Yasuo, Kleider, Jean-Paul

Source: In Journal of Non-Crystalline Solids 1 September 2012 358(17):2110-2113

Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy.

Authors: Masataka Imura¹ imura.masataka@nims.go.jp, Shunsuke Tsuda², Takahiro Nagata¹, Banal, Ryan G.¹, Hideki Yoshikawa^3,4, AnLi Yang^1,4, Yoshiyuki Yamashita^1,4, Keisuke Kobayashi^4,5, Yasuo Koide¹, Tomohiro Yamaguchi^6,7, Masamitsu Kaneko⁷, Nao Uematsu⁷, Ke Wang⁷, Tsutomu Araki⁷, Yasushi Nanishi⁷

Source: Journal of Applied Physics. 2017, Vol. 121 Issue 9, p1-5. 5p. 6 Graphs.

Subject Terms: *INDIUM nitride, *X-ray photoelectron spectroscopy, *RADIO frequency, *ENERGY bands, *MOLECULAR beam epitaxy

Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors.

Authors: Banal, Ryan G.¹ BANAL.Ryan@nims.go.jp, Masataka Imura¹ IMURA.Masataka@nims.go.jp, Jiangwei Liu², Yasuo Koide1^3,4 KOIDE.Yasuo@nims.go.jp

Source: Journal of Applied Physics. 2016, Vol. 120 Issue 11, p115307-1-115307-7. 7p. 2 Color Photographs, 1 Black and White Photograph, 1 Chart, 3 Graphs.

Subject Terms: *SPUTTER deposition, *SPUTTERING (Physics), *ATOMIC layer deposition, *ATOMIC layer epitaxial growth, *ALUMINUM compounds spectra, *FIELD-effect transistors

Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors.

Authors: Banal, Ryan G.¹, BANAL.Ryan@nims.go.jp, Masataka Imura¹, IMURA.Masataka@nims.go.jp, Jiangwei Liu², Yasuo Koide1^3,4, KOIDE.Yasuo@nims.go.jp

Source: Journal of Applied Physics; 2016, Vol. 120 Issue 11, p115307-1-115307-7, 7p, 2 Color Photographs, 1 Black and White Photograph, 1 Chart, 3 Graphs

Measurement of Cyclodeviation by Monocular Vision Using Smartphone. (English)

Authors: Yukina NISHIZAWA¹, Yoichi OKITA², Akiko KIMURA², Fumi GOMI², Masataka IMURA¹

Source: Transactions of Japanese Society for Medical & Biological Engineering; 2022, Vol. 60 Issue 1, p16-24, 9p

Band Gap-Tunable (Mg, Zn)SnN2 Earth-Abundant Alloys with a Wurtzite Structure.

Authors: Naoomi Yamada, Mari Mizutani, Kenta Matsuura, Masataka Imura, Hidenobu Murata, Junjun Jia, Fumio Kawamura

Source: ACS Applied Electronic Materials; 11/23/2021, Vol. 3 Issue 11, p4934-4942, 9p

Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond.

Authors: Jing Zhao^1,2, Jiangwei Liu³, Liwen Sang⁴, Meiyong Liao^1,3, meiyong.liao@nims.go.jp, Coathup, David¹, Masataka Imura³, Baogui Shi¹, Changzhi Gu², Yasuo Koide³, Haitao Ye¹, h.ye@aston.ac.uk

Source: Applied Physics Letters; 1/1/2016, Vol. 108 Issue 1, p1-5, 5p, 1 Diagram, 4 Graphs