SamurAI: A Versatile IoT Node With Event-Driven Wake-Up and Embedded ML Acceleration

Authors: Miro-Panades, I., Tain, B., Christmann, J., Coriat, D., Lemaire, R., Jany, C., Martineau, B., Chaix, F., Waltener, G., Pluchart, E., Noel, J., Makosiej, A., Montoya, M., Bacles-Min, S., Briand, D., Philippe, J., Thonnart, Y., Valentian, A., Heitzmann, F., Clermidy, F.

Source: IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 58(6):1782-1797 Jun, 2023

Energy Efficient Comparator-Less Current-Mode TFET-CMOS Co-Integrated Scalable Flash ADC

Authors: Gupta, Navneet, Shrimali, Hitesh, Makosiej, Adam, Vladimirescu, Andrei, Amara, Amara

Source: 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS) Circuits and Systems (MWSCAS), 2021 IEEE International Midwest Symposium on. :297-300 Aug, 2021

Relation: 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays

Authors: Francois, T., Coignus, J., Makosiej, A., Giraud, B., Carabasse, C., Barbot, J., Martin, S., Castellani, N., Magis, T., Grampeix, H., Van Duijn, S., Mounet, C., Chiquet, P., Schroeder, U., Slesazeck, S., Mikolajick, T., Nowak, E., Bocquet, M., Barrett, N., Andrieu, F., Grenouillet, L.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(4):2108-2114 Apr, 2022

Tunnel FET Negative-Differential-Resistance Based 1T1C Refresh-Free-DRAM, 2T1C SRAM and 3T1C CAM

Authors: Gupta, N., Makosiej, A., Shrimali, H., Amara, A., Vladimirescu, A., Anghel, C.

Source: IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 20:270-277 2021

Back-bias impact on variability and BTI for 3D-monolithic 14nm FDSOI SRAMs applications

Authors: Bosch, D., Andrieu, F., Garros, X., Ciampolini, L., Makosiej, A., Weber, O., Lacord, J., Cluzel, J., Giraud, B., Cibrario, G., Brunet, L., Batude, P., Fenouillet-Beranger, C., Lattard, D., Colinge, J. P., Balestra, F., Vinet, M.

Source: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2019 Joint International EUROSOI Workshop and International Conference on. :1-4 Apr, 2019

Relation: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Energy-Efficient 4T SRAM Bitcell with 2T Read-Port for Ultra-Low-Voltage Operations in 28 nm 3D Monolithic CoolCube™ Technology

Authors: Boumchedda, Reda, Noel, Jean-Philippe, Giraud, Bastien, Makosiej, Adam, Rios, Marco Antonio, Esmanhotto, Eduardo, Bourde-Cice, Emilien, Bellet, Mathis, Turgis, David, Beigne, Edith

Source: 2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) Nanoscale Architectures (NANOARCH), 2018 IEEE/ACM International Symposium on. :1-7 Jul, 2018

Relation: 2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)

16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility

Authors: Francois, T., Coignus, J., Makosiej, A., Giraud, B., Carabasse, C., Barbot, J., Martin, S., Castellani, N., Magis, T., Grampeix, H., Van Duijn, S., Mounet, C., Chiquet, P., Schroeder, U., Slesazeck, S., Mikolajick, T., Nowak, E., Bocquet, M., Barrett, N., Andrieu, F., Grenouillet, L.

Source: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :33.1.1-33.1.4 Dec, 2021

Relation: 2021 IEEE International Electron Devices Meeting (IEDM)

1.56GHz/0.9V energy-efficient reconfigurable CAM/SRAM using 6T-CMOS bitcell

Authors: Gupta, Navneet, Makosiej, Adam, Vladimirescu, Andrei, Amara, Amara, Anghel, Costin

Source: ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference. :316-319 Sep, 2017

Relation: ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference (ESSCIRC)

SamurAI: A 1.7MOPS-36GOPS Adaptive Versatile IoT Node with 15,000× Peak-to-Idle Power Reduction, 207ns Wake-Up Time and 1.3TOPS/W ML Efficiency

Authors: Miro-Panades, Ivan, Tain, Benoit, Christmann, Jean-Frederic, Coriat, David, Lemaire, Romain, Jany, Clement, Martineau, Baudouin, Chaix, Fabrice, Quelen, Anthony, Pluchart, Emmanuel, Noel, Jean-Philippe, Boumchedda, Reda, Makosiej, Adam, Montoya, Maxime, Bacles-Min, Simone, Briand, David, Philippe, Jean-Marc, Valentian, Alexandre, Heitzmann, Frederic, Beigne, Edith, Clermidy, Fabien

Source: 2020 IEEE Symposium on VLSI Circuits VLSI Circuits, 2020 IEEE Symposium. :1-2 Jun, 2020

Relation: 2020 IEEE Symposium on VLSI Circuits

1.45-fJ/bit Access Two-Port SRAM Interfacing a Synchronous/Asynchronous IoT Platform for Energy-Efficient Normally Off Applications

Authors: Boumchedda, R., Makosiej, A., Noel, J., Giraud, B., Christmann, J., Miro-Panades, I., Ciampolini, L., Royer, P., Mounet, C., Turgis, D., Beigne, E.

Source: IEEE Solid-State Circuits Letters IEEE Solid-State Circuits Lett. Solid-State Circuits Letters, IEEE. 1(9):186-189 Sep, 2018

Tunnel FET based ultra-low-leakage compact 2T1C SRAM

Authors: Gupta, Navneet, Makosiej, Adam, Vladimirescu, Andrei, Amara, Amara, Anghel, Costin

Source: 2017 18th International Symposium on Quality Electronic Design (ISQED) Quality Electronic Design (ISQED), 2017 18th International Symposium on. :71-75 Mar, 2017

Relation: 2017 18th International Symposium on Quality Electronic Design (ISQED)

Tunnel FET based refresh-free-DRAM

Authors: Gupta, Navneet, Makosiej, Adam, Vladimirescu, Andrei, Amara, Amara, Anghel, Costin

Source: Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017. :914-917 Mar, 2017

Relation: 2017 Design, Automation & Test in Europe Conference & Exhibition (DATE)

16Kb hybrid TFET/CMOS reconfigurable CAM/SRAM array based on 9T-TFET bitcell

Authors: Gupta, Navneet, Makosiej, Adam, Vladimirescu, Andrei, Amara, Amara, Anghel, Costin

Source: 2016 46th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2016 46th European. :356-359 Sep, 2016

Relation: ESSDERC 2016 - 46th European Solid-State Device Research Conference

Ultra-compact SRAM design using TFETs for low power low voltage applications

Authors: Gupta, Navneet, Makosiej, Adam, Vladimirescu, Andrei, Amara, Amara, Anghel, Costin

Source: 2016 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2016 IEEE International Symposium on. :594-597 May, 2016

Relation: 2016 IEEE International Symposium on Circuits and Systems (ISCAS)

Ultra-Low-Power compact TFET Flip-Flop design for high-performance low-voltage applications

Authors: Gupta, Navneet, Makosiej, Adam, Vladimirescu, Andrei, Amara, Amara, Anghel, Costin

Source: 2016 17th International Symposium on Quality Electronic Design (ISQED) Quality Electronic Design (ISQED), 2016 17th International Symposium on. :107-112 Mar, 2016

Relation: 2016 17th International Symposium on Quality Electronic Design (ISQED)

3T-TFET bitcell based TFET-CMOS hybrid SRAM design for Ultra-Low Power applications

Authors: Gupta, Navneet, Makosiej, Adam, Vladimirescu, Andrei, Amara, Amara, Anghel, Costin

Source: 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE) Design, Automation & Test in Europe Conference & Exhibition (DATE), 2016. :361-366 Mar, 2016

Relation: 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE)

Sub-picowatt retention mode TFET memory for CMOS sensor processing nodes

Authors: Vladimirescu, Andrei, Anghel, Costin, Amara, Amara, Gupta, Navneet, Makosiej, Adam

Source: 2015 6th International Workshop on Advances in Sensors and Interfaces (IWASI) Advances in Sensors and Interfaces (IWASI), 2015 6th IEEE International Workshop on. :266-270 Jun, 2015

Relation: 2015 6th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI)

Ultra-low leakage sub-32nm TFET/CMOS hybrid 32kb pseudo DualPort scratchpad with GHz speed for embedded applications

Authors: Gupta, N., Makosiej, A., Thomas, O., Amara, A., Vladimirescu, A., Anghel, C.

Source: 2015 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2015 IEEE International Symposium on. :597-600 May, 2015

Relation: 2015 IEEE International Symposium on Circuits and Systems (ISCAS)

TFET/CMOS hybrid pseudo dual-port SRAM for scratchpad applications

Authors: Gupta, N., Makosiej, A., Thomas, O., Amara, A., Vladimirescu, A., Anghel, C.

Source: EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on. :209-212 Jan, 2015

Relation: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Novel Fine-Grain Back-Bias Assist Techniques for 14nm FDSOI Top-Tier SRAMs integrated in 3D-Monolithic

Authors: Bosch, D., Andrieu, F., Ciampolini, L., Makosiej, A., Weber, O., Garros, X., Lacord, J., Cluzel, J., Esmanhotto, E., Rios, M., Lang, S., Giraud, B., Berthelon, R., Cibrario, G., Brunet, L., Batude, P., Fenouillet-Beranger, C., Lattard, D., Colinge, J. P., Balestra, F., Vinet, M.

Source: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems and Application (VLSI-TSA), 2019 International Symposium on. :1-2 Apr, 2019

Relation: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)