Multiwavelength DFB laser array with integrated spot size converters

Authors: Ketelsen, L.J.P., Grenko, J.A., Sputz, S.K., Focht, M.W., Vandenberg, J.M., Johnson, J.E., Reynolds, C.L., Geary, J.M., Levkoff, J., Glogovsky, K.G., Stampone, D.V., Chu, S.N.G., Siegrist, T., Pernell, T.L., Walters, F.S., Sheridan-Eng, J., Lentz, J.L., Alam, M.A., People, R., Hybertsen, M.S., Isaacs, E.D., Evans-Lutterodt, K., Leibenguth, R.E., Przybyiek, G.J., Zhang, L., Feder, K., Shunk, S., Tennant, D.M., Peticolas, L.J., Romero, D.M., Freund, J.M., Falk, B.S., Tzafaras, N.N., Smith, L.E., Luther, L.C., Geva, M., Gault, W.A., Zilko, J.L.

Source: IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 36(6):641-648 Jun, 2000

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input

Authors: Johnson, J.E., Ketelsen, L.J.-P., Grenko, J.A., Sputz, S.K., Vandenberg, J., Focht, M.W., Stampone, D.V., Peticolas, L.J., Smith, L.E., Glogovsky, K.G., Przybylek, G.J., Chu, S.N.G., Lentz, J.L., Tzafaras, N.N., Luther, L.C., Pernell, T.L., Walters, F.S., Romero, D.M., Freund, J.M., Reynolds, C.L., Gruezke, L.A., People, R., Alam, M.A.

Source: IEEE Journal of Selected Topics in Quantum Electronics IEEE J. Select. Topics Quantum Electron. Selected Topics in Quantum Electronics, IEEE Journal of. 6(1):19-25 Jan, 2000

Optimization of low-noise GaAs MESFET's

Authors: Fukui, H., DiLorenzo, J.V., Hewitt, B.S., Velebir, J.R., Jr., Cox, H.M., Luther, L.C., Seman, J.A.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 27(6):1034-1037 Jun, 1980

I-2 Theoretical and experimental study of GaAs modified Read IMPATT's

Authors: Niehaus, W.C., Luther, L.C., Irvin, J.C., Iglesias, D.E.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 21(11):736-736 Nov, 1974

Experimental study of dependence of performance on profile parameters in quasi-Read GaAs IMPATT diodes

Authors: Irvin, J.C., Luther, L.C., Coleman, D.J., Jr.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 20(12):1178-1178 Dec, 1973

Bismuth content and growth-induced anisotropy in YLuBiIG

Authors: Luther, L.C., LeCraw, R.C., Ermanis, F.

Source: Journal of Crystal Growth; June 1982, Vol. 58 Issue: 1 p95-102, 8p

Garnet melt viscosity, surface tension and drainage

Authors: Luther, L.C.

Source: Journal of Crystal Growth; June 1986, Vol. 75 Issue: 3 p401-407, 7p

Growth of InP epitaxial layers by rapid thermal low pressure metalorganic chemical vapor....

Authors: Katz, A., Feingold, A., Moriya, N., Nakahara, S., Abernathy, C.R., Pearton, S.J., El-Roy, A., Geva, M., Baiocchi, F.A., Luther, L.C., Lane, E.

Source: Applied Physics Letters; 11/22/1993, Vol. 63 Issue 21, p2958, 3p, 2 Black and White Photographs, 3 Graphs

The effect of V 2O 5 on the growth and properties of Bi-YIG

Authors: Luther, L.C., Rana, V.V.S., Licht, S.J., Norelli, M.P.

Source: In Journal of Crystal Growth 1987 82(4):652-664

Comparison of delta doped GaAs grown by MBE and GSMBE using different arsenic species

Authors: Asom, M.T., Livescu, G., Geva, M., Swaminathan, V., Luther, L.C., Leibenguth, R.E., Mattera, V.D., Schubert, E.F., Kuo, J.M., Kopf, R.

Source: In Journal of Crystal Growth 1991 111(1):246-251

Hydrogen passivation of delta doped GaAs

Authors: Asom, M.T., Swaminathan, V., Livescu, G., Geva, M., Luther, L.C., Leibenguth, R.E., Mattera, V.D., Hayes, T.

Source: In Journal of Crystal Growth 1991 111(1):260-263

Structural and optical characterization of strained and strain-compensated InGaAsP/InP quantum well laser structures

Authors: Henderson, R ^a, Walters, F ^{a, *}, Reynolds, C.L, Jr. ^a, Swaminathan, V ^a, Luther, L.C ^a, Salviati, G ^b, Ferrari, C ^b

Source: In Journal of Crystal Growth 1998 194(1):8-15

Zinc diffused GaP red electroluminescent diodes with 1.5 per cent external quantum efficiency

Authors: Casey, H.C., Jr., Luther, L.C., Lorimor, O.G., Jordan, A.S., Kowalchik, M.

Source: In Solid State Electronics 1972 15(6):617-624