Fast computation of electromagnetic scattering from multiple cavities embedded in infinite ground plane

Authors: Lin, H. K., Luo, J. S., Li, Y.

Source: 2016 Progress in Electromagnetic Research Symposium (PIERS) Progress in Electromagnetic Research Symposium (PIERS). :4050-4054 Aug, 2016

Relation: 2016 Progress in Electromagnetic Research Symposium (PIERS)

Study of selective laser melting process for cubic models with various porosities

Authors: Pan, C. T., Lin, C. H., Huang, Y. S., Chen, S. Y., Yang, T. L., Ou, C. H., Chen, L. Y., Huang, J. C., Lin, D. Y., Jang, J. S. C., Lin, H. K.

Source: 2016 International Conference on Applied System Innovation (ICASI) Applied System Innovation (ICASI), 2016 International Conference on. :1-4 May, 2016

Relation: 2016 International Conference on Applied System Innovation (ICASI)

An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier

Authors: Hacker, J.B., Bergman, J., Nagy, G., Sullivan, G., Kadow, C., Lin, H.-K., Gossard, A.C., Rodwell, M., Brar, B.

Source: IEEE MTT-S International Microwave Symposium Digest, 2005. Microwave Symposium Microwave Symposium Digest, 2005 IEEE MTT-S International. :1029-1032 2005

Relation: 2005 IEEE MTT-S International Microwave Symposium

InAs/AlSb HFETs with f/sub /spl tau// and f/sub max/ above 150 GHz for low-power MMICs

Authors: Bergman, J., Nagy, G., Sullivan, G., Brar, B., Kadow, C., Lin, H.-K., Gossard, A., Rodwell, M.

Source: International Conference onIndium Phosphide and Related Materials, 2003. Indium phosphide and related materials Indium Phosphide and Related Materials, 2003. International Conference on. :219-222 2003

Relation: International Conference on Indium Phosphide and Related Materials

Role of ${\hbox{HfO}} _{2} $/${\hbox{SiO}}_{2}$ Gate Dielectric on the Reduction of Low-Frequent Noise and the Enhancement of a-IGZO TFT Electrical Performance

Authors: Su, L.-Y., Lin, H.-K., Hung, C.-C., Huang, J. J.

Source: Journal of Display Technology J. Display Technol. Display Technology, Journal of. 8(12):695-698 Dec, 2012

CORROSION BEHAVIOR OF CANDIDATE ALLOYS USED IN SUPERCRITICAL WATER ENVIRONMENT
Environmental degradation of materials in nuclear power systems water reactors (19th international conference)

Authors: Lin, H. K., Yeh, T. K., Wang, M. Y.

Source: Proceedings of the international symposium on environmental degradation of materials in nuclear power systems water reactors. 19(2):1052-1058

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN606011075&indx=1&recIds=ETOCCN606011075

A Novel Micromachined AlGaN/GaN Power HEMT With Air-Bridged Matrix Heat Redistribution Layer Design

Authors: Chiu, H.-C., Wang, H.-C., Yang, C.-W., Huang, F.-H., Kao, H.-L., Lin, H.-K.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 35(2):163-165 Feb, 2014

n/sup +/-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs

Authors: Kadow, C., Dahlstrom, M., Bae, J.-U., Lin, H.-K., Gossard, A.C., Rodwell, M.J.W., Brar, B., Sullivan, G.J., Nagy, G., Bergman, J.I.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 52(2):151-158 Feb, 2005

Analysis of contacts configurations of HEMT with ID-VDS curve measurments

Authors: Wang, S. H., Tsai, C. C., Chang, C. W., Wang, H. Y., Sun, Y., Lin, H. K., Tu, L. W.

Source: 2014 40th Annual Northeast Bioengineering Conference (NEBEC) Bioengineering Conference (NEBEC), 2014 40th Annual Northeast. :1-2 Apr, 2014

Relation: 2014 40th Annual Northeast Bioengineering Conference (NEBEC)

Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs

Authors: Ho, H.-C., Gao, Z.-Y., Lin, H.-K., Chiu, P.-C., Hsin, Y.-M., Chyi, J.-I.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 33(7):964-966 Jul, 2012

Characterizations of Amorphous IGZO Thin-Film Transistors With Low Subthreshold Swing

Authors: Su, L.-Y., Lin, H.-Y., Lin, H.-K., Wang, S.-L., Peng, L.-H., Huang, J.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(9):1245-1247 Sep, 2011

Effects of different annealing processes on optoelectronic and bending fatigue properties of AgZr and ITO/AgZr thin film metallic glass

Authors: Chang, C. M., Lin, H. K., Huang, U. G., Hong, H. A., Huang, J. C.

Source: In Optics and Lasers in Engineering April 2019 115:100-106

Nonquasi-static modeling technique for microwave GaAs FETs

Authors: Lin, H.-K., Abdel-Motaleb, I.M.

Source: Proceedings of the 33rd Midwest Symposium on Circuits and Systems Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on. :621-624 vol.1 1990

Relation: Proceedings of the 33rd Midwest Symposium on Circuits and Systems

A 10–40 GHz Broadband Subharmonic Monolithic Mixer in 0.18 $\mu$ m CMOS Technology

Authors: Lin, C-M., Lin, H.-K., Lai, Y.-A., Chang, C.-P., Wang, Y.-H.

Source: IEEE Microwave and Wireless Components Letters IEEE Microw. Wireless Compon. Lett. Microwave and Wireless Components Letters, IEEE. 19(2):95-97 Feb, 2009

A 16–44 GHz Compact Doubly Balanced Monolithic Ring Mixer

Authors: Lin, C.-M., Lin, H.-K., Lin, C.-F., Lai, Y.-A., Lin, C.-H., Wang, Y.

Source: IEEE Microwave and Wireless Components Letters IEEE Microw. Wireless Compon. Lett. Microwave and Wireless Components Letters, IEEE. 18(9):620-622 Sep, 2008

RF noise performance of low power InAs/AlSb HFETs

Authors: Bergman, J., Nagy, G., Sullivan, G., Brar, B., Kadow, C., Lin, H.-K., Gossard, A., Rodwell, M.

Source: 61st Device Research Conference. Conference Digest (Cat. No.03TH8663) Device research conference Device Research Conference, 2003. :147-148 2003

Relation: 61st Device Research Conference

AlSb/InAs/InAsP/AlSb composite-channel HFETs

Authors: Lin, H.-K., Kadow, C., Dahlstrom, M., Bae, J.-U., Rodwell, M., Gossard, A.C., Brar, B., Sullivan, G., Nagy, G., Bergman, J.

Source: 61st Device Research Conference. Conference Digest (Cat. No.03TH8663) Device research conference Device Research Conference, 2003. :151-152 2003

Relation: 61st Device Research Conference

Electron-beam welding behavior in Mg-Al-based alloys.

Authors: Su, S. F., Huang, J. C., Lin, H. K.

Source: Metallurgical & Materials Transactions. Part A; May 2002, Vol. 33A Issue 5, p1461-1473, 13p

Study of pyrite oxidation by cyclic voltammetric, impedance spectroscopic and potential step techniques.

Authors: Lin, H. K., Say, W. C.

Source: Journal of Applied Electrochemistry; August 1999, Vol. 29 Issue 8, p987-994, 8p

Possible Twinning Operations during Directional Solidification of Multicrystalline Silicon

Authors: Jhang, J. W., Jain, T., Lin, H. K., Lan, C. W.

Source: Crystal growth & design. 18(4):2518-2524

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN631826660&indx=1&recIds=ETOCRN631826660