Enhancing EM Reliability and Lifetime Modeling: A Multi-Link Structure Approach

Authors: Chang, H. C., Liao, P. J., Chen, S. H., Chang, Y.K., Li, C.P., Liao, W. C., Hsieh, M. H., Yang, H. W., Lee, J. H., Huang, C. M., He, Jun

Source: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :01-04 Apr, 2024

Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)

Evaluation of Large Language Models for Summarization Tasks in the Medical Domain: A Narrative Review

Authors: Croxford, Emma, Gao, Yanjun, Pellegrino, Nicholas, Wong, Karen K., Wills, Graham, First, Elliot, Liao, Frank J., Goswami, Cherodeep, Patterson, Brian, Afshar, Majid

Subject Terms: Computer Science - Computation and Language, Computer Science - Artificial Intelligence

Access URL: http://arxiv.org/abs/2409.18170

Unveiling the Impact of High Frequency On-State and Off-State Operation on Gate Dielectric Reliability: A Comprehensive Analysis

Authors: Chang, Y. K., Liao, P. J., Liu, Y. S., Chen, P. S., Sou, K. P., Wang, C. H., Huang, T. J., Chuang, W. H., Lee, J. H.

Source: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

Relation: 2023 International Electron Devices Meeting (IEDM)

A New Ramp Stress Reliability Assessment on Pulse Energy Based OTS Switching Operation

Authors: Chang, P. C., Liao, P. J., Wu, C. H., Chang, Y. C., Hou, D. H., Ambrosi, E., Lee, H. Y., Lee, J. H., Bao Taiwan, X. Y.

Source: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-5 Mar, 2023

Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)

Three steps towards dose optimization for oncology dose finding

Authors: Liao, Jason J. Z., Asatiani, Ekaterine, Liu, Qingyang, Hou, Kevin

Subject Terms: Statistics - Methodology, Statistics - Applications

Access URL: http://arxiv.org/abs/2309.15333

Exploring Task-Completion Processes in L2 Reading Assessments: Multiple-Choice vs. Short-Answer Questions

Authors: Liao, Ray J. T.

Source: Reading in a Foreign Language. Oct 2021 33(2):168-190.

Peer Reviewed: Y

Page Count: 23

Descriptors: Multiple Choice Tests, Test Format, Comparative Analysis, Reading Tests, Second Language Learning, Second Language Instruction, English (Second Language), Reading Comprehension, College Students, Student Attitudes, Verbal Communication, Reading Writing Relationship, Intensive Language Courses

A gated group sequential design for seamless Phase II/III trial with subpopulation selection

Authors: Miao, Guanhong, Liao, Jason J. Z., Yang, Jing, Anderson, Keaven

Subject Terms: Statistics - Applications, 62P10

Access URL: http://arxiv.org/abs/2206.12536

Engineering defects in pristine amorphous chalcogenides for forming-free low voltage selectors

Authors: Ambrosi, E., Wu, C. H., Lee, H. Y., Hsu, C. F., Lee, C. M., Vaziri, S., Datye, I. M., Chen, Y. Y., Hou, D. H., Chang, P. C., Heh, D. W., Liao, P. J., Lee, T. Y., Chang, M. F., Wong, H.-S. P., Bao, X. Y.

Source: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :18.7.1-18.7.4 Dec, 2022

Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

CeO2-Doped Hf0.5Zr0.5O2 Ferroelectrics for High Endurance Embedded Memory Applications

Authors: Yu, Z., Saini, B., Liao, P. J., Chang, Y. K., Hou, V., Nien, C. H., Shih, Y. C., Yeong, S. H., Afanas'Ev, V., Huang, F., Baniecki, J. D., Mehta, A., Chang, C. S., Wong, H.-S. P., Tsai, W., McIntyre, P. C.

Source: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2022 International Symposium on. :1-2 Apr, 2022

Relation: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

A Statistical Learning Model for Accurate Prediction of Time-Dependent Dielectric Degradation for Low Failure Rates

Authors: Joshi, Kaustubh, Lee, Yung-Huei, Yao, Yu-Cheng, Chang, Shu-Wen, Bian, Siao-Syong, Liao, P. J., Shih, Jiaw-Ren, Chen, Min-Jan

Source: 2019 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2019 IEEE International. :1-6 Mar, 2019

Relation: 2019 IEEE International Reliability Physics Symposium (IRPS)

The Use of Generalizability Theory in Investigating the Score Dependability of Classroom-Based L2 Reading Assessment

Authors: Liao, Ray J. T. (ORCID 0000-0003-4246-1449)

Source: Language Testing. Jan 2023 40(1):86-106.

Peer Reviewed: Y

Page Count: 21

Descriptors: Reading Tests, Language Tests, Second Language Learning, Second Language Instruction, English (Second Language), Reading Comprehension, Test Items, Undergraduate Students, Test Format, Multiple Choice Tests, Test Reliability, Scores, Generalization, Educational Theories

Investigation of Kirk-Effect Induced Hot-Carrier-Injection in High-Voltage Power Devices

Authors: Huang, Y-H., Liao, P. J., Lee, Y-H., Chen, M. J., Ho, T.Y., Chang, Lucy

Source: 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2018 IEEE International Symposium on the. :1-4 Jul, 2018

Relation: 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics

Authors: Chang, Y. K., Liao, P. J., Yeong, S. H., Lin, Y.-M., Lee, J. H., Lin, C. T., Yu, Z., Tsai, W., McIntyre, P. C.

Source: 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :3A.1-1-3A.1-5 Mar, 2022

Relation: 2022 IEEE International Reliability Physics Symposium (IRPS)

Investigation of First Fire Effect on VTH Stability and Endurance in GeCTe Selector

Authors: Chang, P. C., Liao, P. J., Heh, D. W., Lee, C., Hou, D. H., Ambrosi, E., Wu, C. H., Lee, H. Y., Lee, J. H., Bao, X. Y.

Source: 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :4A.3-1-4A.3-5 Mar, 2022

Relation: 2022 IEEE International Reliability Physics Symposium (IRPS)

Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 1011) for High Density 1S1R Memory Array

Authors: Wu, C. H., Lee, C. M., Chen, Y. S., Lee, H. Y., Ambrosi, E., Hsu, C. F., Vaziri, S., Chen, Y. Y., Nien, C. H., Hwang, R. L., Liao, P. J., Hou, D. H., Lee, Y.-H., Lee, T. Y., Chen, T. C., Chang, M. F., Wong, H.-S. P., Bao, X. Y.

Source: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021

Relation: 2021 Symposium on VLSI Technology

Low variability high endurance and low voltage arsenic-free selectors based on GeCTe

Authors: Ambrosi, E., Wu, C. H., Lee, H. Y., Chang, P. C., Hsu, C. F., Lee, C. M., Chang, C. C., Chen, Y. Y, Heh, D. W., Hou, D. H., Liao, P. J., Lee, T. Y., Chang, M. F., Wong, H.-S. P., Bao, X. Y.

Source: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :28.5.1-28.5.4 Dec, 2021

Relation: 2021 IEEE International Electron Devices Meeting (IEDM)

Circuit-based reliability consideration in FinFET technology

Authors: Lee, Y.-H., Liao, P. J., Joshi, K., Huang, D. S.

Source: 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2017 IEEE 24th International Symposium on the. :1-7 Jul, 2017

Relation: 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Cold CMOS as a Power-Performance-Reliability Booster for Advanced FinFETs

Authors: Chiang, H. L., Chen, T. C., Wang, J. F., Mukhopadhyay, S., Lee, W. K., Chen, C. L., Khwa, W. S., Pulicherla, B., Liao, P. J., Su, K. W., Yu, K. F., Wang, T., Wong, H. S. P., Diaz, C. H., Cai, J.

Source: 2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020

Relation: 2020 IEEE Symposium on VLSI Technology

How Do Cohesion Features Inform Science Instruction for English Learners?: A Comparison Study of Digital and Printed Science Texts

Authors: Park, GoMee (ORCID 0000-0001-5107-0568), Ye, Yafei (ORCID 0000-0002-3446-7085), Liao, Ray J. T. (ORCID 0000-0003-4246-1449)

Source: International Journal of Science Education. 2022 44(18):2763-2782.

Peer Reviewed: Y

Page Count: 20

Descriptors: Science Instruction, Printed Materials, Electronic Publishing, Instructional Materials, Connected Discourse, Reading Comprehension, Middle School Students, Textbooks, Comparative Analysis, Technology Uses in Education, Pandemics, COVID-19, Form Classes (Languages), Teaching Methods, English (Second Language), Second Language Learning, English Language Learners

Reorthonormalization of Chebyshev matrix product states for dynamical correlation functions

Authors: Xie, H. D., Huang, R. Z., Han, X. J., Yan, X., Zhao, H. H., Xie, Z. Y., Liao, H. J., Xiang, T.

Source: Phys. Rev. B 97, 075111 (2018)

Subject Terms: Condensed Matter - Strongly Correlated Electrons, Quantum Physics

Access URL: http://arxiv.org/abs/1711.09207