A highly scaled, high performance 45 nm bulk logic CMOS technology with 0.242 μm2 SRAM cell

Authors: Cheng, Kuan-Lun, Wu, C. C., Wang, Y. P., Lin, D. W., Chu, C. M., Tarng, Y. Y., Lu, S. Y., Yang, S. J., Hsieh, M. H., Liu, C. M., Fu, S. P., Chen, J. H., Lin, C. T., Lien, W. Y., Huang, H. Y., Wang, P. W., Lin, H. H., Lee, D. Y., Huang, M. J., Nieh, C. F., Lin, L. T., Chen, C. C., Chang, W., Chiu, Y. H., Wang, M. Y., Yeh, C. H., Chen, F. C., Wu, C. M., Chang, Y. H., Wang, S. C., Hsieh, H. C., Lei, M. D., Goto, K., Tao, H. J., Cao, M., Tuan, H. C., Diaz, C. H., Mii, Y. J.

Source: 2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :243-246 Dec, 2007

Relation: 2007 IEEE International Electron Devices Meeting

Time-dependent tunneling spectroscopy for studying surface diffusion of single particles confined in nanostructures

Authors: Wang, K.-D., Zhang, C., Lei, M.-D., Xiao, X.-D.

Source: PHYSICS -BEIJING-. 34(10):714-717

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN178491969&indx=1&recIds=ETOCRN178491969

A preliminary study on the flora in the middle and upper reaches of Xunhe River basin

Authors: Wang, C.-k., Lu, X.-g., Lei, M.-d.

Source: ACTA BOTANICA BOREALI OCCIDENTALIA SINICA. 20(4):647-652

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN088000286&indx=1&recIds=ETOCRN088000286

Protective Effect of Compound Cantharis Injection on Anthracycline Chemotherapy Induced Cardiac Injury in Breast Cancer Patients

Authors: Wang, G.-d., Lei, M.-d., Li, J.-y., Liu, C.-l., Lou, J.-s.

Source: CHINA PHARMACY. (378):1100-1102

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN364417171&indx=1&recIds=ETOCRN364417171

Reduction of Fluorine Concentration in the Submicron Polycide Process Using Dichlorosilane WSi~x
VLSI technology, systems, and applications

Authors: Hsu, S. L., Lei, M. D., Lee, C. K., Liu, L. M.

Source: INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY SYSTEMS AND APPLICATIONS. (E 6):91-94

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN002752876&indx=1&recIds=ETOCCN002752876

Reduction of Fluorine Concentration in the Submicron Polycide Process Using Dichlorosilane WSi~x
VLSI technology, systems, and applications

Authors: Hsu, S. L., Lei, M. D., Lee, C. K., Liu, L. M.

Source: INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY SYSTEMS AND APPLICATIONS. (E 6):91-94

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN002713858&indx=1&recIds=ETOCCN002713858

Reduction of Fluorine Concentration in the Submicron Polycide Process Using Dichlorosilane WSi~x
VLSI technology, systems, and applications

Authors: Hsu, S. L., Lei, M. D., Lee, C. K., Liu, L. M.

Source: INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY SYSTEMS AND APPLICATIONS. (E 6):91-94

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN001872990&indx=1&recIds=ETOCCN001872990

Reduction of Fluorine Concentration in the Submicron Polycide Process Using Dichlorosilane WSi~x
Proceedings of Technical Papers

Authors: Hsu, S. L., Lei, M. D., Lee, C. K., Liu, L. M.

Source: INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY SYSTEMS AND APPLICATIONS. (E 6):91-91

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCEN013826640&indx=1&recIds=ETOCEN013826640

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C Redistribution during Ni Suicide Formation on Si1-yCy Epitaxial Layers.

Authors: Lee, S. W., Huang, S. S., Hsu, H. C., Nieh, C. W., Tsai, W. C., Lo, C. P., Lai, C. H., Tsai, P. Y., Wang, M. Y., Wu, C. M., Lei, M. D.

Source: Journal of The Electrochemical Society; 2010, Vol. 157 Issue 3, pH297-H300, 4p

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C Redistribution during Ni Silicide Formation on Si1 − yCyEpitaxial Layers

Authors: Lee, S. W., Huang, S. S., Hsu, H. C., Nieh, C. W., Tsai, W. C., Lo, C. P., Lai, C. H., Tsai, P. Y., Wang, M. Y., Wu, C. M., Lei, M. D.

Source: Journal of the Electrochemical Society; March 2010, Vol. 157 Issue: 3

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