Core-shell InGaN Nanowires: MBE Growth and Properties

Authors: Gridchin, V. O., Reznik, R. R., Kotlyar, K. P., Lendyashova, V. V., Dragunova, A. S., Kirilenko, D. A., Kryzhanovskaya, N.V., Cirlin, G. E.

Source: 2022 International Conference Laser Optics (ICLO) Laser Optics (ICLO), 2022 International Conference. :1-1 Jun, 2022

Relation: 2022 International Conference Laser Optics (ICLO)

Hybrid nanostructures based on InGaN nanowires with deposited Ag NPs-SiOx for visible emission range

Authors: Shugabaev, T. M., Gridchin, V.O., Kotlyar, K. P., Dragunova, A. S., Kulagina, A. S., Cirlin, G. E.

Source: 2022 International Conference Laser Optics (ICLO) Laser Optics (ICLO), 2022 International Conference. :1-1 Jun, 2022

Relation: 2022 International Conference Laser Optics (ICLO)

Hexagonal Ge on the side facets of GaAs and AlGaAs nanowires

Authors: Ilkiv, I. V., Kotlyar, K. P., Kirilenko, D. A., Soshnikov, I. P., Mikushev, S. V., Dubrovskii, V. G., Cirlin, George E.

Source: 2022 International Conference Laser Optics (ICLO) Laser Optics (ICLO), 2022 International Conference. :1-1 Jun, 2022

Relation: 2022 International Conference Laser Optics (ICLO)

Synthesis and optical properties of heterogeneous film structure based on InP/InAsP/InP nanowires

Authors: Khrebtov, A. I., Kulagina, A. S., Danilov, V. V., Dragunova, A. S., Kotlyar, K. P., Reznik, R. R., Cirlin, G. E.

Source: Journal of optical technology. 89(5):298-301

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MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate

Authors: Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Kukushkin, S. A., Osipov, A. V., Soshnikov, I P., Nikitina, E. V., Cirlin, G. E.

Source: 2016 International Conference Laser Optics (LO) Laser Optics (LO), 2016 International Conference. :R9-2-R9-2 Jun, 2016

Relation: 2016 International Conference Laser Optics (LO)

Nonlinear Bleaching of InAs Nanowires in the Visible Range

Authors: Kulagina, A. S., Khrebtov, A. I., Ryzhov, A. A., Danilov, V. V., Shtrom, I. V., Kotlyar, K. P., Alekseev, P. A., Smirnov, A. N., Reznik, R. R., Cirlin, G. E.

Source: Optics and spectroscopy. 128(1):125-130

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100171724747.0x000001&indx=1&recIds=ETOCvdc_100171724747.0x000001

Architectonics of Zinc Oxide Nanorod Coatings for Adsorption Gas Sensors.

Authors: Ryabko, A. A., Nalimova, S. S., Permyakov, N. V., Bobkov, A. A., Maksimov, A. I., Kondratev, V. M., Kotlyar, K. P., Ovezov, M. K., Komolov, A. S., Lazneva, E. F., Moshnikov, V. A., Aleshin, A. N.

Source: Technical Physics; Jul2024, Vol. 69 Issue 7, p2103-2110, 8p

Subject Terms: GAS detectors, GAS absorption & adsorption, OXIDE coating, HYDROTHERMAL synthesis, MASS production

Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Method of Atom Substitution

Authors: Redkov, A. V., Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V., Kotlyar, K. P., Likhachev, A. I., Nashchekin, A. V., Soshnikov, I. P.

Source: Physics of the solid state. 61(3):299-306

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100127810171.0x000001&indx=1&recIds=ETOCvdc_100127810171.0x000001

Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon

Authors: Cirlin, G. E., Reznik, R. R., Samsonenko, Yu. B., Khrebtov, A. I., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Kirilenko, D. A., Kryzhanovskaya, N. V.

Source: Semiconductors. 52(11):1416-1419

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100104402541.0x000001&indx=1&recIds=ETOCvdc_100104402541.0x000001

Solar Cell Based on Core/Shell Nanowires

Authors: Sibirev, N. V., Kotlyar, K. P., Koryakin, A. A., Shtrom, I. V., Ubiivovk, E. V., Soshnikov, I. P., Reznik, R. R., Bouravleuv, A. D., Cirlin, G. E.

Source: Semiconductors. 52(12):1568-1572

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100124991198.0x000001&indx=1&recIds=ETOCvdc_100124991198.0x000001

MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

Authors: Reznik, R. R., Kotlyar, K. P., Ilkiv, I. V., Soshnikov, I. P., Lebedev, S. P., Lebedev, A. A., Kirilenko, D. A., Alexeev, P. A., Cirlin, G. E.

Source: Semiconductors. 52(11):1428-1431

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100126850158.0x000001&indx=1&recIds=ETOCvdc_100126850158.0x000001

The Features of GaAs Nanowire SEM Images

Authors: Soshnikov, I. P., Kotlyar, K. P., Bert, N. A., Kirilenko, D. A., Bouravleuv, A. D., Cirlin, G. E.

Source: Semiconductors. 52(5):605-608

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100158449694.0x000001&indx=1&recIds=ETOCvdc_100158449694.0x000001

Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition

Authors: Lubyanskiy, Ya. V., Bondarev, A. D., Soshnikov, I. P., Bert, N. A., Zolotarev, V. V., Kirilenko, D. A., Kotlyar, K. P., Pikhtin, N. A., Tarasov, I. S.

Source: Semiconductors. 52(2):184-188

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100158450552.0x000001&indx=1&recIds=ETOCvdc_100158450552.0x000001

Specific Features of Structural Stresses in InGaN/GaN Nanowires.

Authors: Soshnikov, I. P.^1,2,3 (AUTHOR) ipsosh@beam.ioffe.ru, Kotlyar, K. P.^1,4 (AUTHOR), Reznik, R. R.⁵ (AUTHOR), Gridchin, V. O.^1,4 (AUTHOR), Lendyashova, V. V.^1,2 (AUTHOR), Vershinin, A. V.¹ (AUTHOR), Lysak, V. V.⁵ (AUTHOR), Kirilenko, D. A.² (AUTHOR), Bert, N. A.² (AUTHOR), Cirlin, G. E.^1,2,3 (AUTHOR)

Source: Semiconductors. Oct2021, Vol. 55 Issue 10, p795-798. 4p.

Subject Terms: *INDIUM gallium nitride, *GALLIUM nitride, *NANOWIRES, *INDIUM nitride, *ELECTRON microscopy

Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy.

Authors: Ilkiv, I. V.^1,2 (AUTHOR) fiskerr@ymail.com, Kotlyar, K. P.² (AUTHOR), Kirilenko, D. A.³ (AUTHOR), Osipov, A. V.⁴ (AUTHOR), Soshnikov, I. P.^1,3 (AUTHOR), Terpitsky, A. N.¹ (AUTHOR), Cirlin, G. E.¹ (AUTHOR)

Source: Semiconductors. Aug2021, Vol. 55 Issue 8, p678-681. 4p.

Subject Terms: *GERMANIUM, *EPITAXY, *NANOWIRES, *SEMICONDUCTOR nanowires, *CRYSTAL structure, *RAMAN spectroscopy, *MOLECULAR beam epitaxy

Anomalously Large Burgers Vectors of Screw Dislocations in Gallium Nitride Nanowires.

Authors: Kirilenko, D. A.¹ (AUTHOR) demid.kirilenko@mail.ioffe.ru, Kotlyar, K. P.² (AUTHOR)

Source: Crystallography Reports. Jul2021, Vol. 66 Issue 4, p644-647. 4p.

Subject Terms: *SCREW dislocations, *NANOWIRES, *HAMBURGERS, *UNIT cell, *INDIUM gallium nitride, *GALLIUM nitride

Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate

Authors: Reznik, R. R., Kotlyar, K. P., Kryzhanovskaya, N. V., Morozov, S. V., Cirlin, G. E.

Source: Technical physics letters. 45(11):1111-1113

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Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications

Authors: Shubina, K. Yu., Berezovskaya, T. N., Mokhov, D. V., Morozov, I. A., Kotlyar, K. P., Mizerov, A. M., Nikitina, E. V., Bouravleuv, A. D.

Source: Semiconductors. 52(16):2117-2119

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100104400263.0x000001&indx=1&recIds=ETOCvdc_100104400263.0x000001

Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate

Authors: Shtrom, I. V., Kotlyar, K. P., Filosofov, N. G., Serov, A. Yu., Krizhkov, D. I., Samsonenko, Yu. B., Ilkiev, I. V., Reznik, R. R., Agekyan, V. F., Cirlin, G. E.

Source: Semiconductors. 52(16):2146-2148

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100104400163.0x000001&indx=1&recIds=ETOCvdc_100104400163.0x000001

InGaN/GaN QDs Nanorods: Processing and Properties

Authors: Kotlyar, K. P., Soshnikov, I. P., Morozov, I. A., Berezovskaya, T. N., Kryzhanovskaya, N. V., Kudryashov, D. A., Lysak, V. V.

Source: Semiconductors. 52(16):2096-2098

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100126850132.0x000001&indx=1&recIds=ETOCvdc_100126850132.0x000001