Evaluation of TiN hardmask films to prevent line wiggling due to plasma-induced film stress
Advanced Etch Technology and Process Integration for Nanopatterning XII

Authors: Turnquist, A., Kofuji, N., Sebastian, J., Liu, Z., Kou, H., Fukuda, H., Tomczak, Y., Sun, Y., Piumi, D., Roest, D. D.

Source: Proceedings of SPIE, the International Society for Optical Engineering. 12499:1249904-1249904-10

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN900063486&indx=1&recIds=ETOCCN900063486

Reduction of charging damage of gate oxide by time modulation bias method

Authors: Ono, T., Oomoto, Y., Mizutani, T., Yoshioka, K., Ogawa, Y., Kofuji, N., Izawa, M., Goto, Y., Kure, T.

Source: 1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) Plasma process-induced damage Plasma Process-Induced Damage, 1999 4th International Symposium on. :167-170 1999

Relation: 1999 4th International Symposium on Plasma Process-Induced Damage

Sub-quarter Micron Poly-Si Etching With Positive Pulse Biasing Technique

Authors: Kofuji, N., Tsujimoto, K., Mizutani, T.

Source: Proceedings of 1st International Symposium on Plasma Process-Induced Damage Plasma Process-Induced Damage, 1996 1st International Symposium on. :234-236 1996

Relation: 1st International Symposium on Plasma Process-Induced Damage

Etch developments in response to DSA challenges
Novel Patterning Technologies 2021

Authors: Laib, J., Reyes, L., Turnquist, A., Satake, M., Kofuji, N.

Source: Proceedings of SPIE, the International Society for Optical Engineering. 11610:116100O-116100O-6

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN900030046&indx=1&recIds=ETOCCN900030046

Uniform Lateral Etching of Tungsten in Deep Trenches Utilizing Reaction-Limited NF~3 Plasma Process
Dry process (International symposium)

Authors: Kofuji, N., Mori, M., Nishida, T.

Source: Proceedings of International Symposium on Dry Process. 2016:19-22

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN603170890&indx=1&recIds=ETOCCN603170890

Surface Reaction Control for 240-nm Pitch Metal Etching
Dry process

Authors: Kofuji, N., Tsutsumi, T., Matsumoto, E., Fujimoto, K., Itabashi, N., Izawa, M., Fujii, T., Tachi, S.

Source: PROCEEDINGS OF SYMPOSIUM ON DRY PROCESS. :23-28

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN042066620&indx=1&recIds=ETOCCN042066620

CD-Controlled Gate Etching with High Uniformity Using UHF-ECR Plasma
Dry process

Authors: Itabashi, N., Mori, M., Kofuji, N., Kojima, M., Fujii, T., Makino, A., Yoshigai, M., Ishimura, H., Tsujimoto, K., Tachi, S.

Source: PROCEEDINGS OF SYMPOSIUM ON DRY PROCESS. :115-120

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN037592146&indx=1&recIds=ETOCCN037592146

Effect of Line-Edge-Roughness on Wiggling

Authors: Kofuji, N., Negishi, N., Ishimura, H., Nishida, T., Kobayashi, H.

Source: PROCEEDINGS OF INTERNATIONAL SYMPOSIUM ON DRY PROCESS. :177-180

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN350156419&indx=1&recIds=ETOCRN350156419

I-4 Surface Reaction Control for 240-nm Pitch Metal Etching

Authors: Kofuji, N., Tsutsumi, T., Matsumoto, E., Fujimoto, K., Itabashi, N., Izawa, M., Fujii, T., Tachi, S.

Source: PROCEEDINGS OF INTERNATIONAL SYMPOSIUM ON DRY PROCESS. 23RD:23-28

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN106602153&indx=1&recIds=ETOCRN106602153

Near-surface interactions and their etching-reaction model in metal plasma-assisted etching

Authors: Tachi, S., Izawa, M., Tsujimoto, K., Kure, T., Kofuji, N., Suzuki, K., Hamasaki, R., Kojima, M.

Source: JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A VACUUMS SURFACES AND FILMS. 16(1):250-259

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN038746558&indx=1&recIds=ETOCRN038746558

(RF+Pulse) Biasing Gate Etching Technique

Authors: Kofuji, N., Mori, M., Izawa, M., Tsujimoto, K., Tachi, S.-I.

Source: PROCEEDINGS OF SYMPOSIUM ON DRY PROCESS. 19TH:113-118

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN039466843&indx=1&recIds=ETOCRN039466843

Reduction of Local Charge up with Electron Acceleration Pulse Bias

Authors: Kofuji, N., Tsujimoto, K., Mizutani, T.

Source: PROCEEDINGS OF SYMPOSIUM ON DRY PROCESS. 17TH:39-44

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN004312521&indx=1&recIds=ETOCRN004312521

Line-edge roughness increase due to wiggling enhanced by initial pattern waviness
Dry process; DPS2013

Authors: Kofuji, N., Negishi, N., Ishimura, H., Nishida, T., Kobayashi, H.

Source: JAPANESE JOURNAL OF APPLIED PHYSICS -NEW SERIES-. 53(3):03DE01-03DE01

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN088399365&indx=1&recIds=ETOCCN088399365

Negative Impact of Etched Si Area on Selectivity and Positive Impact of Photoelectric Current on Etched Profile in Gate Etching with Different Wafer Bias Frequencies (10 pages)
Dry process

Authors: Kamibayashi, M., Kofuji, N., Mori, M., Negishi, N.

Source: JAPANESE JOURNAL OF APPLIED PHYSICS -NEW SERIES-. 52(5):05EB04-05EB04

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN085081571&indx=1&recIds=ETOCCN085081571

(RF+Pulse) Biasing Gate Etching Technique
Dry process

Authors: Kofuji, N., Mori, M., Izawa, M., Tsujimoto, K.

Source: PROCEEDINGS OF SYMPOSIUM ON DRY PROCESS. 19TH:113-118

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN023141225&indx=1&recIds=ETOCCN023141225

Reduction of Local Charge up with Electron Acceleration Pulse Bias
Dry process

Authors: Kofuji, N., Tsujimoto, K., Mizutani, T.

Source: PROCEEDINGS OF SYMPOSIUM ON DRY PROCESS. 17TH:39-44

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN012736800&indx=1&recIds=ETOCCN012736800

Polymer Deposition Control in SiO~2 Etching by Substrate Temperature Manipulation
Dry process

Authors: Arai, S., Kofuji, N., Tsugimoto, K., Mizutani, T.

Source: PROCEEDINGS OF SYMPOSIUM ON DRY PROCESS. 16TH:223-228

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN006645094&indx=1&recIds=ETOCCN006645094

Short-gas-residence-time electron cyclotron resonance plasma etching
40th National symposium

Authors: Tsujimoto, K., Kumihashi, T., Kofuji, N., Tachi, S.

Source: JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A VACUUMS SURFACES AND FILMS. 12(4//PT1):1209-1215

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN004210931&indx=1&recIds=ETOCCN004210931

[G-2] Effect of Wafer-bias Frequency on Selectivity and Gate-etch Profile in the Gate-last Fin-FET Process
Dry process

Authors: Kamibayashi, M., Kofuji, N., Mori, M., Negishi, N.

Source: PROCEEDINGS OF INTERNATIONAL SYMPOSIUM ON DRY PROCESS. :173-174

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN086518117&indx=1&recIds=ETOCCN086518117

Investigation of Mask Distortion during Trimming
Dry process

Authors: Kofuji, N., Miura, H.

Source: PROCEEDINGS OF INTERNATIONAL SYMPOSIUM ON DRY PROCESS. :265-266

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN081378963&indx=1&recIds=ETOCCN081378963