13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface

Authors: Kang, Dongku, Kim, Minsu, Jeon, Su Chang, Jung, Wontaeck, Park, Jooyong, Choo, Gyosoo, Shim, Dong-kyo, Kavala, Anil, Kim, Seung-Bum, Kang, Kyung-Min, Lee, Jiyoung, Ko, Kuihan, Park, Hyun-Wook, Min, Byung-Jun, Yu, Changyeon, Yun, Sewon, Kim, Nahyun, Jung, Yeonwook, Seo, Sungwhan, Kim, Sunghoon, Lee, Moo Kyung, Park, Joo-Yong, Kim, James C., Cha, Young San, Kim, Kwangwon, Jo, Youngmin, Kim, Hyunjin, Choi, Youngdon, Byun, Jindo, Park, Ji-hyun, Kim, Kiwon, Kwon, Tae-Hong, Min, Youngsun, Yoon, Chiweon, Kim, Youngcho, Kwak, Dong-Hun, Lee, Eungsuk, Hahn, Wook-ghee, Kim, Ki-sung, Kim, Kyungmin, Yoon, Euisang, Kim, Won-Tae, Lee, Inryoul, Moon, Seung hyun, Ihm, Jeongdon, Byeon, Dae Seok, Song, Ki-Whan, Hwang, Sangjoon, Kyung, Kye Hyun

Source: 2019 IEEE International Solid-State Circuits Conference - (ISSCC) Solid-State Circuits Conference - (ISSCC), 2019 IEEE International. :216-218 Feb, 2019

Relation: 2019 IEEE International Solid-State Circuits Conference - (ISSCC)

19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

Authors: Park, Ki-Tae, Han, Jin-man, Kim, Daehan, Nam, Sangwan, Choi, Kihwan, Kim, Min-Su, Kwak, Pansuk, Lee, Doosub, Choi, Yoon-He, Kang, Kyung-Min, Choi, Myung-Hoon, Kwak, Dong-Hun, Park, Hyun-wook, Shim, Sang-won, Yoon, Hyun-Jun, Kim, Doohyun, Park, Sang-won, Lee, Kangbin, Ko, Kuihan, Shim, Dong-Kyo, Ahn, Yang-Lo, Park, Jeunghwan, Ryu, Jinho, Kim, Donghyun, Yun, Kyungwa, Kwon, Joonsoo, Shin, Seunghoon, Youn, Dongkyu, Kim, Won-Tae, Kim, Taehyun, Kim, Sung-Jun, Seo, Sungwhan, Kim, Hyung-Gon, Byeon, Dae-Seok, Yang, Hyang-Ja, Kim, Moosung, Kim, Myong-Seok, Yeon, Jinseon, Jang, Jaehoon, Kim, Han-Soo, Lee, Woonkyung, Song, Duheon, Lee, Sungsoo, Kyung, Kye-Hyun, Choi, Jeong-Hyuk

Source: 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International. :334-335 Feb, 2014

Relation: 2014 IEEE International Solid- State Circuits Conference (ISSCC)

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