Biomolecule sensing in THz range with n-Ge/Si antennas

Authors: Chavarin, C.A., Wiciak, A. A., Hardt, E., Gruessing, S., Skibitzki, O., Costina, I., Seifert, W., Klesse, W. M., Manganelli, C.L., You, C., Flesch, J., Piehler, J., Missori, M., Koczorowski, W., Baldassarre, L., Witzigmann, B., Capellini, G., Spirito, D.

Source: 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Infrared, Millimeter and Terahertz Waves (IRMMW-THz),2022 47th International Conference on. :1-2 Aug, 2021

Relation: 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

Lateral Selective SiGe Growth for Dislocation-Free Virtual Substrate Fabrication
SiGe, Ge, and related materials: Materials, processing, and devices (10th symposium)

Authors: Anand, K., Schubert, M. A., Corley-Wiciak, A. A., Spirito, D., Corley-Wiciak, C., Klesse, W. M., Mai, A., Tillack, B., Yamamoto, Y.

Source: ECS transactions. 109(4):269-276

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN607926643&indx=1&recIds=ETOCCN607926643

A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line

Authors: Capellini, G., Lischke, S., Nien, L.-W., Kreissl, J., Yamamoto, Y., Virgilio, M., Schaffner, J., Klesse, W. M., Wolansky, D., Voigt, K., Zimmermann, L., Mai, A., Tillack, B., Schroeder, T.

Source: 2017 IEEE 14th International Conference on Group IV Photonics (GFP) Group IV Photonics (GFP), 2017 IEEE 14th International Conference on. :43-44 Aug, 2017

Relation: 2017 IEEE 14th International Conference on Group IV Photonics (GFP)

Morphology and chemical composition of cobalt germanide islands on Ge(001): in-situ nanoscale insights into contact formation for Ge-based device technology

Authors: Ewert, M., Schmidt, Th., Flege, J. I., Heidmann, I., Grzela, T., Klesse, W. M., Foerster, M., Aballe, L., Schroeder, T., Falta, J.

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/1602.04680

Bottom-up assembly of metallic germanium

Authors: Scappucci, G., Klesse, W. M., Yeoh, L. A., Carter, D. J., Warschkow, O., Marks, N. A., Jaeger, D. L., Capellini, G., Simmons, M. Y., Hamilton, A. R.

Subject Terms: Condensed Matter - Materials Science

Access URL: http://arxiv.org/abs/1503.05994

Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium

Authors: Shamim, S., Mahapatra, S., Scappucci, G., Klesse, W. M., Simmons, M. Y., Ghosh, A.

Subject Terms: Condensed Matter - Strongly Correlated Electrons

Access URL: http://arxiv.org/abs/1404.0625

(Invited) Alternative High n-Type Doping Techniques in Germanium
High Purity and High Mobility Semiconductors 13

Authors: Capellini, G., Klesse, W. M., Mattoni, G., Simmons, M. Y., Scappucci, G.

Source: ECS transactions. 64(11):163-172

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN601184149&indx=1&recIds=ETOCCN601184149

Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111)

Authors: Tetzner, H., Sana, P., Klesse, W. M., Capellini, G., Schubert, M. A., Thapa, S. B., Storck, P., Schroeder, T., Zoellner, M. H.

Source: Applied physics letters. 116(25)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100132472412.0x000001&indx=1&recIds=ETOCvdc_100132472412.0x000001

Dual-temperature encapsulation of phosphorus in germanium δ-layers toward ultra-shallow junctions

Authors: Scappucci, G., Capellini, G., Klesse, W. M., Simmons, M. Y.

Source: JOURNAL OF CRYSTAL GROWTH. 316(1):81-84

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN289637760&indx=1&recIds=ETOCRN289637760

Stable and selective self-assembly of α-lipoic acid on Ge(001) for biomolecule immobilization.

Authors: Kazmierczak, M.¹, Flesch, J.², Mitzloff, J.¹, Capellini, G.^1,3, Klesse, W. M.¹, Skibitzki, O.¹, You, C.², Bettenhausen, M.⁴, Witzigmann, B.⁴, Piehler, J.², Schroeder, T.^1,5, Guha, S.¹

Source: Journal of Applied Physics; 2018, Vol. 123 Issue 17, pN.PAG-N.PAG, 11p, 2 Color Photographs, 1 Diagram, 5 Graphs

Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)

Authors: Schlykow, V., Klesse, W. M., Niu, G., Taoka, N., Yamamoto, Y., Skibitzki, O., Barget, M. R., Zaumseil, P., von Känel, H., Schubert, M. A., Capellini, G., Schroeder, T.

Source: Applied physics letters. 109(20)

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100150933274.0x000001&indx=1&recIds=ETOCvdc_100150933274.0x000001

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The electronic structure of ε-Ga2O3.

Authors: Mulazzi, M., Reichmann, F., Becker, A., Klesse, W. M., Alippi, P., Fiorentini, V., Parisini, A., Bosi, M., Fornari, R.

Source: APL Materials; Feb2019, Vol. 7 Issue 2, pN.PAG-N.PAG, 6p

Subject Terms: ELECTRONIC structure, THIN films, PHOTOELECTRON spectroscopy, VALENCE bands, FERMI level, DENSITY functional theory

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