7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management

Authors: Xu, Yibo, Vangipuram, Vijay Gopal Thirupakuzi, Telasara, Vishank, Cheng, Junao, Zhang, Yuxuan, Hashimoto, Tadao, Letts, Edward, Key, Daryl, Zhao, Hongping, Lu, Wu

Subject Terms: Physics - Applied Physics

Access URL: http://arxiv.org/abs/2303.15646

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Authors: Cho, Minkyu, Xu, Zhiyu, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Daeumer, Matthias A., Yoo, Jae-Hyuck, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Hashimoto, Tadao, Letts, Edward, Dupuis, Russell D., Shen, Shyh-Chiang

Source: IEEE transactions on electron devices. 70(9):4578-4583

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100191113937.0x000001&indx=1&recIds=ETOCvdc_100191113937.0x000001

Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method

Authors: Hashimoto, Tadao, Key, Daryl, Letts, Edward, Gaddy, Mathew, Gregory, Austin, Dickens, James, West, Tim, Zhao, Wei, Guo, Mengzhe, Buyuklimanli, Temel

Source: In Journal of Crystal Growth 1 November 2023 621

Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping.

Authors: Xu, Zhiyu¹, zhiyux@gatech.edu, Daeumer, Matthias A.², Cho, Minkyu¹, Yoo, Jae-Hyuck², Detchprohm, Theeradetch¹, Bakhtiary-Noodeh, Marzieh³, Shao, Qinghui², Laurence, Ted A.², Key, Daryl⁴, Letts, Edward⁴, Hashimoto, Tadao⁴, Dupuis, Russell D.¹, Shen, Shyh-Chiang¹

Source: Journal of Applied Physics; 5/28/2024, Vol. 135 Issue 20, p1-8, 8p

Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation.

Authors: Daeumer, Matthias, Yoo, Jae-Hyuck, Xu, Zhiyu, Cho, Minkyu, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Zhang, Yuxuan, Thirupakuzi Vangipuram, Vijay Gopal, Talesara, Vishank, Xu, Yibo, Letts, Edward, Key, Daryl, Li, Tian T., Shao, Qinghui, Dupuis, Russell, Shen, Shyh-Chiang, Lu, Wu, Zhao, Hongping, Hashimoto, Tadao, Laurence, Ted A.

Source: Scientific Reports; 1/2/2025, Vol. 15 Issue 1, p1-8, 8p

Subject Terms: POWER electronics, CHEMICAL vapor deposition, EPITAXIAL layers, STRAY currents, THREE-dimensional imaging

X-ray characterization technique for the assessment of surface damage in GaN wafers

Authors: Letts, Edward, Sun, Yimeng, Key, Daryl, Jordan, Benjamin, Hashimoto, Tadao

Source: In Journal of Crystal Growth 1 November 2018 501:13-17

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices.

Authors: Hashimoto, Tadao¹, tadao@spmaterials.comed@spmaterials.com, Letts, Edward R.¹, Key, Daryl¹

Source: Crystals (2073-4352); Aug2022, Vol. 12 Issue 8, p1085, 9p

Reduction of crack density in ammonothermal bulk GaN growth

Authors: Letts, Edward, Key, Daryl, Hashimoto, Tadao

Source: In Journal of Crystal Growth 15 December 2016 456:27-32

GaN Substrate development through the near equilibrium ammonothermal (NEAT) method and its application to higher performance GaN-based devices
Quantum Sensing and Nano Electronics and Photonics XVI

Authors: Hashimoto, Tadao, Letts, Edward, Key, Daryl, Jordan, Benjamin, Shang, Eric

Source: Proceedings of SPIE, the International Society for Optical Engineering. 10926:109261D-109261D-7

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN900005135&indx=1&recIds=ETOCCN900005135

Development of GaN wafers via the ammonothermal method

Authors: Letts, Edward, Hashimoto, Tadao, Hoff, Sierra, Key, Daryl, Male, Keith, Michaels, Mathew

Source: In Journal of Crystal Growth 1 October 2014 403:3-6

7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management.

Authors: Xu, Yibo, Vangipuram, Vijay Gopal Thirupakuzi, Talesara, Vishank, Cheng, Junao, Zhang, Yuxuan, Hashimoto, Tadao, Letts, Edward, Key, Daryl, Zhao, Hongping, Lu, Wu

Source: Applied Physics Letters; 10/2/2023, Vol. 123 Issue 14, p1-6, 6p

Subject Terms: BREAKDOWN voltage, ELECTRON mobility, DIELECTRIC materials, DIODES, GALLIUM nitride, PERMITTIVITY

(INVITED) PERFORMANCE EVALUATION OF III-N BIPOLAR SWITCHES GROWN ON GAN SUBSTRATES
236th Electrochemical Society (ECS) meeting

Authors: Shen, Shyh-Chiang, Tsou, Chuan-Wei, Ji, Mi-Hee, Noodeh, Marzieh, Letts, Edward, Key, Daryl, Hashimoto, Tadao, Detchphrom, Theeradetch, Dupuis, Russell D.

Source: Meeting abstracts. 236(3):1915-1915

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN605735974&indx=1&recIds=ETOCCN605735974

Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method.

Authors: Key, Daryl, Jordan, Benjamin, Letts, Ed, Hashimoto, Tadao

Source: Japanese Journal of Applied Physics; Mar2022, Vol. 61 Issue 3, p1-4, 4p

Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method

Authors: Hashimoto, Tadao, Letts, Edward R., Key, Daryl, Jordan, Benjamin

Source: Japanese journal of applied physics. 58(C):SC1005-SC1005

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN620666517&indx=1&recIds=ETOCRN620666517

Integrated Method for the Measurement of Trace Atmospheric Bases.

Authors: Key, Daryl¹, Stihle, Jerome¹, Petit, Jean-Eudes¹, Bonnet, Cécile¹, Depernon, Lauriane¹, Liu, Oscar¹, Kennedy, Sean¹, Latimer, Robyn¹, Burgoyne, Marnie¹, Wanger, Darcy¹, Webster, Alexandre¹, Casunuran, Samantha¹, Hidalgo, Sergio¹, Thomas, Mark¹, Moss, John A.¹, Baum, Marc M.¹

Source: Atmospheric Measurement Techniques. 2011, Vol. 4 Issue 12, pS1-S12. 12p. 1 Diagram, 2 Charts, 1 Graph.

Subject Terms: *HIGH performance liquid chromatography, *GAS chromatography, *TRACE analysis, *MASS spectrometry, *BASES (Chemistry), *ATMOSPHERIC chemistry

GaN Substrate development through the near equilibrium ammonothermal (NEAT) method and its application to higher performance GaN-based devices.

Authors: Hashimoto, Tadao, Letts, Edward, Key, Daryl, Jordan, Benjamin, Shang, Eric

Source: Proceedings of SPIE; 12/20/2018, Vol. 10926, p109261D-1-109261D-7, 7p

GaN Substrate development through the near equilibrium ammonothermal (NEAT) method and its application to higher performance GaN-based devices

Authors: Razeghi, Manijeh, Lewis, Jay S., Tournié, Eric, Khodaparast, Giti A., Hashimoto, Tadao, Letts, Edward, Key, Daryl, Jordan, Benjamin, Shang, Eric

Source: Proceedings of SPIE; February 2019, Vol. 10926 Issue: 1 p109261D-109261D-7, 983357p

Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production.

Authors: Key, Daryl¹ (AUTHOR) daryl@spmaterials.com, Letts, Edward¹ (AUTHOR) tadao@spmaterials.com, Tsou, Chuan-Wei² (AUTHOR) chuan-wei.tsou@ece.gatech.edu, Ji, Mi-Hee² (AUTHOR) mihee.ji@gatech.edu, Bakhtiary-Noodeh, Marzieh² (AUTHOR) Bakhtiary.marzieh@gatech.edu, Detchprohm, Theeradetch² (AUTHOR) theeradetch.detchprohm@ece.gatech.edu, Shen, Shyh-Chiang² (AUTHOR) shensc@ece.gatech.edu, Dupuis, Russell² (AUTHOR) dupuis@gatech.edu, Hashimoto, Tadao¹ (AUTHOR)

Source: Materials (1996-1944). Jun2019, Vol. 12 Issue 12, p1925. 1p. 1 Color Photograph, 3 Diagrams, 4 Graphs.

Subject Terms: *PILOT plants, *LIGHT emitting diodes, *GALLIUM nitride, *PIN diodes, *SEMICONDUCTOR lasers, *X-rays, *BREAKDOWN voltage

Company/Entity: GEORGIA Institute of Technology

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