Nondestructive Depth Profiling of Gate Insulators by Angle-Resolved Photoelectron Spectroscopy

Authors: Nohira, H., Shinagawa, S., Kase, M., Maruizumi, T., Hattori, T.

Source: 2005 IEEE Conference on Electron Devices and Solid-State Circuits Electron Devices and Solid-State Circuits, 2005 IEEE Conference on. :155-160 2005

Relation: 2005 IEEE Conference on Electron Devices and Solid-State Circuits

Performance enhancement in aggressively scaled CMOS devices higher carrier activation with laser spike annealing

Authors: Yamamoto, T., Kubo, T., Sukegawa, T., Wang, Y., Feng, L., Talwar, S., Kase, M.

Source: Extended Abstracts of the Fifth International Workshop on Junction Technology Junction Technology Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on. :19-22 2005

Relation: Extended Abstracts of the Fifth International Workshop on Junction Technology

45-nm node CMOS integration with a novel STI structure and full-NCS/Cu interlayers for low-operation-power (lop) applications

Authors: Okuno, M., Okabe, K., Sakuma, T., Suzuki, K., Miyashita, T., Yao, T., Morioka, H., Terahara, M., Kojima, Y., Watatani, H., Sugimoto, K., Watanabe, T., Hayami, Y., Mori, T., Kubo, T., Iba, Y., Sugiura, I., Fukutome, H., Morisaki, Y., Minakata, H., Ikeda, K., Kishii, S., Shimizu, N., Tanaka, T., Asai, S., Nakaishi, M., Fukuyama, S., Tsukune, A., Yamabe, M., Hanyuu, I., Miyajima, M., Kase, M., Watanabe, K., Satoh, S., Sugii, T.

Source: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :52-55 2005

Relation: International Electron Devices Meeting 2005

A novel strain enhanced CMOS architecture using selectively deposited high tensile and high compressive silicon nitride films

Authors: Pidin, S., Mori, T., Inoue, K., Fukuta, S., Itoh, N., Mutoh, E., Ohkoshi, K., Nakamura, R., Kobayashi, K., Kawamura, K., Saiki, T., Fukuyama, S., Satoh, S., Kase, M., Hashimoto, K.

Source: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :213-216 2004

Relation: 2004 International Electron Devices Meeting

Impact of pre-amorphization for the reduction of contact resistance using laser thermal process

Authors: Yamamoto, T., Goto, K., Kubo, T., Wang, Y., Lin, T., Talwar, S., Kase, M., Sugii, T.

Source: Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. Junction technology Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on. :27-30 2002

Relation: Extended Abstracts of the Third International Workshop on Junction Technology. IWJT

USJ process requirements on low energy doping and spike anneal for production for 90 nm node CMOS LOGIC

Authors: Nakao, H., Momiyama, Y., Kase, M., Ito, H., Matsunaga, Y.

Source: Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Ion implantation technology proceedings Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on. :161-164 2002

Relation: Proceedings of the 2002 14th International Conference on Ion Implantation Technology

Lateral extension engineering using nitrogen implantation (N-tub) for high-performance 40-nm pMOSFETs

Authors: Momiyama, Y., Okabe, K., Nakao, H., Kase, M., Kojima, M., Sugii, T.

Source: Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :647-650 2002

Relation: IEEE International Electron Devices Meeting

RIKEN RI beam factory project: progress report

Authors: Yano, Y., Goto, A., Kase, M., Katayama, T.

Source: PACS2001. Proceedings of the 2001 Particle Accelerator Conference (Cat. No.01CH37268) Particle accelerator conference Particle Accelerator Conference, 2001. PAC 2001. Proceedings of the 2001. 1:575-579 vol.1 2001

Relation: Proceedings of 2001 Particle Accelerator Conference

FEOL technologies for fabricating high performance logic and system LSI of 100 nm node

Authors: Kase, M., Okabe, K., Kubo, T., Saitoh, M., Tamura, N., Mori, H.

Source: 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) Ion implantation technology Ion Implantation Technology, 2000. Conference on. :91-94 2000

Relation: 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000

Formation of ultra-shallow junction by BF/sub 2//sup +/ implantation and spike annealing

Authors: Kubo, T., Hori, M., Kase, M.

Source: 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) Ion implantation technology Ion Implantation Technology, 2000. Conference on. :195-198 2000

Relation: 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000

Issues of ultra shallow junction formation using sub-1 keV ion implantation

Authors: Kase, M., Kikuchi, Y., Kubo, T., Niwa, H., Fukuda, T.

Source: 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 1:110-113 vol.1 1999

Relation: 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Investigation of energy purity of Sub-10 keV B/sup +/ implants on a Varian VIISion PLUS ion implanter

Authors: Todorov, S.S., Latona, G.B., Cummings, J.J., Kase, M.

Source: 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 1:650-653 vol.1 1999

Relation: 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

A study of ultra shallow junction and tilted channel implantation for high performance 0.1 /spl mu/m pMOSFETs

Authors: Goto, K., Kase, M., Momiyama, Y., Kurata, H., Tanaka, T., Deura, M., Sanbonsugi, Y., Sugii, T.

Source: International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :631-634 1998

Relation: International Electron Devices Meeting 1998. Technical Digest

Commissioning of the Superconducting Ring Cyclotron for the RIKEN RI Beam Factory

Authors: Okuno, H., Yamada, K., Ohnishi, J., Fukunishi, N., Ikegami, K., Maie, T., Hasebe, H., Kamigaito, O., Sakamoto, N., Kumagai, K., Yokouchi, S., Kase, M., Goto, A., Yano, Y.

Source: IEEE Transactions on Applied Superconductivity IEEE Trans. Appl. Supercond. Applied Superconductivity, IEEE Transactions on. 18(2):226-231 Jun, 2008

The Superconducting Ring Cyclotron in RIKEN

Authors: Okuno, H., Ohnishi, J., Yamada, K., Fukunishi, N., Ikegami, K., Maie, T., Hasebe, H., Hamanaka, M., Kase, M., Goto, A., Yano, Y.

Source: IEEE Transactions on Applied Superconductivity IEEE Trans. Appl. Supercond. Applied Superconductivity, IEEE Transactions on. 17(2):1063-1068 Jun, 2007

Charge Strippers in the Riken RI-Beam Factory

Authors: Ryuto, H., Fukunishi, N., Hasebe, H., Inabe, N., Yokouchi, S., Kamigaito, O., Goto, A., Kase, M., Yano, Y.

Source: Proceedings of the 2005 Particle Accelerator Conference Particle Accelerator Conference, 2005. PAC 2005. Proceedings of the. :3751-3753 2005

Relation: Proceedings of the 2005 Particle Accelerator Conference

Energy contamination from multiple-charged ion implantation in conventional implanter

Authors: Kubo, T., Hisaeda, T., Miyake, T., Ishigaki, T., Kase, M., Watanabe, K., Fukuda, T.

Source: Proceedings of 11th International Conference on Ion Implantation Technology Ion implantation technology Ion Implantation Technology. Proceedings of the 11th International Conference on. :100-103 1996

Relation: Proceedings of 11th International Conference on Ion Implantation Technology

Tungsten contamination in BF/sub 2/ implants

Authors: Liebert, R.B., Angel, G.C., Kase, M.

Source: Proceedings of 11th International Conference on Ion Implantation Technology Ion implantation technology Ion Implantation Technology. Proceedings of the 11th International Conference on. :135-138 1996

Relation: Proceedings of 11th International Conference on Ion Implantation Technology

Implanted-ion dose variation from Si surface status of sub-nm scale on 90 nm ULSI process

Authors: Kase, M., Kubo, T., Watanabe, K., Okabe, K., Nakao, H.

Source: Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Ion implantation technology proceedings Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on. :33-35 2002

Relation: Proceedings of the 2002 14th International Conference on Ion Implantation Technology

Advanced BEOL integration using porous low-k (k=2.25) material with charge damage-less electron beam cure technique

Authors: Owada, T., Ohara, N., Watatani, H., Kouno, T., Kudo, H., Ochimizu, H., Sakoda, T., Asami, N., Ohkura, Y., Fukuyama, S., Tsukune, A., Nakaishi, M., Nakamura, T., Nara, Y., Kase, M.

Source: 2009 IEEE International Interconnect Technology Conference Interconnect Technology Conference, 2009. IITC 2009. IEEE International. :149-151 Jun, 2009

Relation: 2009 IEEE International Interconnect Technology Conference - IITC