Analysis of copper plasticity impact in TSV-middle and backside TSV-last fabrication processes

Authors: Guo, Wei, Karmarkar, Aditya P., Xu, Xiaopeng, Van der Plas, Geert, Van Huylenbroeck, Stefaan, Gonzalez, Mario, Absil, Philippe, El Sayed, Karim, Beyne, Eric

Source: 2015 IEEE 65th Electronic Components and Technology Conference (ECTC) Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th. :1038-1044 May, 2015

Relation: 2015 IEEE 65th Electronic Components and Technology Conference (ECTC)

Simulation methodology and flow integration for 3D IC stress management

Authors: Nakamoto, Mark, Radojcic, Riko, Wei Zhao, Dasarapu, Vinay K., Karmarkar, Aditya P., Xu, Xiaopeng

Source: IEEE Custom Integrated Circuits Conference 2010 Custom Integrated Circuits Conference (CICC), 2010 IEEE. :1-4 Sep, 2010

Relation: 2010 IEEE Custom Integrated Circuits Conference -CICC 2010

Performanace and reliability analysis of 3D-integration structures employing Through Silicon Via (TSV)

Authors: Karmarkar, Aditya P., Xu, Xiaopeng, Moroz, Victor

Source: 2009 IEEE International Reliability Physics Symposium Reliability Physics Symposium, 2009 IEEE International. :682-687 Apr, 2009

Relation: 2009 IEEE International Reliability Physics Symposium (IRPS)

Analysis of performance and reliability trade-off in dummy pattern design for 32-nm technology

Authors: Karmarkar, Aditya P., Xu, Xiaopeng, Moroz, Victor, Rollins, Greg, Lin, Xiao

Source: 2009 10th International Symposium on Quality Electronic Design Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design. :185-189 Mar, 2009

Relation: 2009 10th International Symposium on Quality Electronic Design (ISQED)

Modeling Copper Plastic Deformation and Liner Viscoelastic Flow Effects on Performance and Reliability in Through Silicon Via (TSV) Fabrication Processes

Authors: Karmarkar, Aditya P., Xu, Xiaopeng, El Sayed, Karim, Guo, Wei, Van der Plas, Geert, Van Huylenbroeck, Stefaan, Gonzalez, Mario, Absil, Philippe, Beyne, Eric

Source: IEEE transactions on device and materials reliability. 19(4):642-653

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100099446090.0x000001&indx=1&recIds=ETOCvdc_100099446090.0x000001

Temperature and Process Dependent Material Characterization and Multiscale Stress Evolution Analysis for Performance and Reliability Management under Chip Package Interaction

Authors: Karmarkar, Aditya P., Xu, Xiaopeng, El-Sayed, Karim

Source: Advancing microelectronics. 45(6):12-21

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN618540891&indx=1&recIds=ETOCRN618540891

Proton-Induced Damage in Gallium Nitride-Based Schottky Diodes.

Authors: Karmarkar, Aditya P., White, Brad D., Buttari, Dario

Source: IEEE Transactions on Nuclear Science; December 2005 pt1, Vol. 52 Issue 6, p2239-2244, 6p

Proton Irradiation Effects on GaN-Based High Electron-Mobility Transistors With Si-Doped AlxGa1-xN and Thick GaN Cap Layers.

Authors: Karmarkar, Aditya P., Jun, Bongim, Fleetwood, Daniel M.

Source: IEEE Transactions on Nuclear Science; Dec2004 Part 2 of 3, Vol. 51 Issue 6, p3801-3806, 6p

Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors.

Authors: Hu, Xinwen, Karmarkar, Aditya P., Jun, Bongim

Source: IEEE Transactions on Nuclear Science; Dec2003 Part 1 of 2, Vol. 50 Issue 6, p1791-1796, 6p

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Microbump Impact on Reliability and Performance in Through-Silicon Via Stacks.

Authors: Karmarkar, Aditya P., Xu, Xiaopeng

Source: MRS Online Proceedings Library; 2011, Vol. 1335 Issue 1, p1-6, 6p

Proton Irradiation Effects on GaN-Based High Electron-Mobility Transistors With Si-Doped A1∞Ga1 -- ∞N and Thick GaN Cap Layers.

Authors: Karmarkar, Aditya P.¹ a.karmarkar@vanderbilt.edu, Jun, Bongim² bongirn.jun@vanderbilt.edu, Fleetwood, Daniel M.² dan.fleetwood@vanderbilt.edu, Schrimpf, Ronald D.² ron.schrimpf@vanderbilt.edu, Weller, Robert A.² robert.a.weller@vanderbilt.edu, White, Brad D.³ whiteb@ece.osu.edu, Brillson, Leonard J.³ brillson@ece.osu.edu, Mishra, Umesh K.⁴ misra@ece.ucsb.edu

Source: IEEE Transactions on Nuclear Science. Dec2004 Part 2 of 3, Vol. 51 Issue 6, p3801-3806. 6p.

Subject Terms: Protons, Irradiation, Radiation, Baryons, Free electron theory of metals, Thin films

Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors.

Authors: Xinwen Hu¹ xinwen.hu@vanderbilt.edu, Karmarkar, Aditya P.² a.karmarkar@vanderbilt.edu, Bongim Jun³ bongim.jun@vanderbilt.edu, Fleetwood, Daniel M.³ dan.fleetwood@vanderbilt.edu, Schrimpf, Ronald D.³ ron.schrimpf@vanderbilt.edu, Geil, Robert D.⁴ bob.geil@vanderbilt.edu, Weller, Robert A.³ Robert.a.weller@vanderbilt.edu, White, Brad D.⁵ whiteb@ece.eng.ohi-state.edu, Bataiev, Mykola⁶ batayev@mps.ohio-state.edu, Brillson, Leonard J.⁵ brillson.1@osu.edu, Umesh K., Mishra⁷ misra@ece.ucsb.edu

Source: IEEE Transactions on Nuclear Science. Dec2003 Part 1 of 2, Vol. 50 Issue 6, p1791-1796. 6p.

Subject Terms: Modulation-doped field-effect transistors, Irradiation, Electron mobility, Gallium alloys, Protons, Semiconductors

Material, Process and Geometry Effects on Through-Silicon Via Reliability and Isolation.

Authors: Karmarkar, Aditya P., Xu, Xiaopeng, Ramaswami, Sesh, Dukovic, John, Sapre, Kedar, Bhatnagar, Ajay

Source: MRS Online Proceedings Library; 2010, Vol. 1249 Issue 1, p1-6, 6p

Corrections to “Copper Anisotropy Effects in Three-Dimensional Integrated Circuits Using Through-Silicon Vias”.

Authors: Karmarkar, Aditya P., Xu, Xiaopeng, Yeap, Kong-Boon, Zschech, Ehrenfried

Source: IEEE Transactions on Device & Materials Reliability; Sep2012, Vol. 12 Issue 3, p582-582, 1p