Helicobacter pylori Targets in AGS Human Gastric Adenocarcinoma: In Situ Proteomic Profiling and Systematic Analysis

Authors: Yang, J.-S., Kang, C.-Y., Su, C.-H., Chen, C.-J., Chiu, Y.-J., Hsu, Y.-M.

Source: Anticancer research. 42(1):531-546

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN628179061&indx=1&recIds=ETOCRN628179061

Conformal, low-damage shallow junction technology (Xj∼5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node

Authors: Ok, I., Ang, K.-W., Hobbs, C., Baek, R. H., Kang, C. Y., Snow, J., Nunan, P., Nadahara, S., Kirsch, P. D., Jammy, R.

Source: 2012 12th International Workshop on Junction Technology Junction Technology (IWJT), 2012 12th International Workshop on. :29-34 May, 2012

Relation: 2012 12th International Workshop on Junction Technology (IWJT)

Analytic Model of S/D Series Resistance in Trigate FinFETs With Polygonal Epitaxy

Authors: Sohn, C.-W., Kang, C. Y., Ko, M.-D., Choi, D.-Y., Sagong, H. C., Jeong, E.-Y., Park, C.-H., Lee, S.-H., Kim, Y.-R., Baek, C.-K., Lee, J.-S., Lee, J. C., Jeong, Y.-H.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(4):1302-1309 Apr, 2013

Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs

Authors: Nam, J., Kang, C. Y., Kim, K. P., Yeo, H., Lee, B. J., Seo, S., Yang, J.-W.

Source: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 59(6):3021-3026 Dec, 2012

Microstructure and Electrical Properties of Amorphous $ \hbox{Bi}_{5}\hbox{Nb}_{3}\hbox{O}_{15}$ Films Grown on Cu/Ti/$ \hbox{SiO}_{2}$/Si Substrates Using RF Magnetron Sputtering

Authors: Kim, J.-S., Cho, K.-H., Kang, L.-S., Sun, J.-W., Paik, D.-S., Seong, T.-G., Kang, C.-Y., Kim, J.-H., Sung, T.-H., Nahm, S.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 58(5):1462-1467 May, 2011

Structural and Electrical Properties of Mn-Doped $ \hbox{Bi}_{4}\hbox{Ti}_{3}\hbox{O}_{12}$ Thin Film Grown on $ \hbox{TiN}/\hbox{SiO}_{2}/\hbox{Si}$ Substrate for RF MIM Capacitors

Authors: Choi, J.-Y., Kang, L.-S., Cho, K.-H., Seong, T.-G., Nahm, S., Kang, C.-Y., Yoon, S.-J., Kim, J.-H.

Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 56(8):1631-1636 Aug, 2009

Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Authors: Kang, C. Y., Kirsch, P. D., Lee, B. H., Tseng, H.-H., Jammy, R.

Source: IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 9(2):171-179 Jun, 2009

Time-Dependent Dielectric Breakdown of $\hbox{La}_{2} \hbox{O}_{3}$-Doped High-$k$/Metal Gate Stacked NMOSFETs

Authors: Han, I.-S., Choi, W.-H., Kwon, H.-M., Na, M.-K., Zhang, Y.-Y., Kim, Y.-G., Wang, J.-S., Kang, C. Y., Bersuker, G., Lee, B. H., Jeong, Y. H., Lee, H.-D., Jammy, R.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 30(3):298-301 Mar, 2009

Effect of Oxygen Pressure on the Electrical Properties of $\hbox{Bi}_{5} \hbox{Nb}_{3}\hbox{O}_{15}$ Films Grown by RF Magnetron Sputtering

Authors: Cho, K.-H., Choi, C.-H., Choi, J.-Y., Seong, T.-G., Nahm, S., Kang, C.-Y., Yoon, S.-J., Kim, J.-H.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(9):984-987 Sep, 2008

Electrical Properties of Amorphous $\hbox{Bi}_{5} \hbox{Nb}_{3}\hbox{O}_{15}$ Thin Film for RF MIM Capacitors

Authors: Cho, K.-H., Choi, C.-H., Hong, K. P., Choi, J.-Y., Jeong, Y. H., Nahm, S., Kang, C.-Y., Yoon, S.-K., Lee, H.-J.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(7):684-687 Jul, 2008

Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High- $k$ Dielectric SOI FinFETs

Authors: Kang, C. Y., Yang, J.-W., Oh, J., Choi, R., Suh, Y. J., Floresca, H. C., Kim, J., Kim, M., Lee, B. H., Tseng, H.-H., Jammy, R.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(5):487-490 May, 2008

Investigation on the Electric Properties of $ \hbox{Bi}_{1.5}\hbox{ZnNb}_{1.5}\hbox{O}_{7}$ Thin Films Grown on TiN Substrate for MIM Capacitors

Authors: Hong, K. P., Cho, K.-H., Jeong, Y. H., Nahm, S., Kang, C.-Y., Yoon, S.-J.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(4):334-337 Apr, 2008

STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

Authors: Majumdar, K., Vivekanand, S., Huffman, C., Matthews, K., Ngai, T., Chen, C. H., Baek, R. H., Loh, W. Y., Rodgers, M., Stamper, H., Gausepohl, S., Kang, C. Y., Hobbs, C., Kirsch, P. D.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 34(9):1082-1084 Sep, 2013

Development of a Semiempirical Compact Model for DC/AC Cell Operation of ${\rm HfO}_{\rm{x}}$-Based ReRAMs

Authors: Noh, J., Jo, M., Kang, C. Y., Gilmer, D., Kirsch, P., Lee, J. C., Lee, B. H.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 34(9):1133-1135 Sep, 2013

High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications

Authors: Kim, D.-H., Kim, T.-W., Hill, R. J. W., Young, C. D., Kang, C. Y., Hobbs, C., Kirsch, P., del Alamo, J. A., Jammy, R.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 34(2):196-198 Feb, 2013

Electrical Characteristics of $\hbox{Ba}_{0.6}\hbox{Sr}_{0.4} \hbox{TiO}_{3}$ Thin-Film Chip Capacitors for Embedded Passive Components

Authors: Rahayu, R., Kang, M.-G., Do, Y.-H., Hwang, J.-H., Kang, C.-Y., Yoon, S.-J.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 34(1):99-101 Jan, 2013

New Insight Into PBTI Evaluation Method for nMOSFETs With Stacked High- $k$/IL Gate Dielectric

Authors: Lee, S. K., Jo, M., Sohn, C.-W., Kang, C. Y., Lee, J. C., Jeong, Y.-H., Lee, B. H.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 33(11):1517-1519 Nov, 2012

Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications

Authors: Sohn, C.-W., Kang, C. Y., Baek, R.-H., Choi, D.-Y., Sagong, H. C., Jeong, E.-Y., Baek, C.-K., Lee, J.-S., Lee, J. C., Jeong, Y.-H.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 33(9):1234-1236 Sep, 2012

New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High-$k$/Metal-Gate nMOSFETs

Authors: Sagong, H. C., Kang, C. Y., Sohn, C.-W., Choi, D.-Y., Jeong, E.-Y., Baek, C.-K., Lee, J.-S., Jeong, Y.-H.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(12):1668-1670 Dec, 2011

Comprehensive Study of Quasi-Ballistic Transport in High- $\kappa$/Metal Gate nMOSFETs

Authors: Sagong, H. C., Kang, C. Y., Sohn, C.-W., Jeon, K., Jeong, E.-Y., Choi, D.-Y., Baek, C.-K., Lee, J.-S., Lee, J. C., Jeong, Y.-H.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(11):1474-1476 Nov, 2011