Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs

Authors: Wendoloski, J. P., Hillier, J., Liles, S. D., Rendell, M., Ashlea-Alava, Y., Raes, B., Li, R., Kubicek, S., Godfrin, C., Jussot, J., Beyne, S., Wan, D., Rahman, Md. M., Yianni, S., Chan, K. W., Hudson, F. E., Lim, W. H., De Greve, K., Dzurak, A. S., Hamilton, A. R.

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics

Access URL: http://arxiv.org/abs/2502.21173

Demonstration of 99.9% single qubit control fidelity of a silicon quantum dot spin qubit made in a 300 mm foundry process

Authors: Stuyck, N. Dumoulin, Feng, M.K., Lim, W. H., Ramirez, S. Serrano, Escott, C. C., Botzem, T., Tanttu, T., Yang, C. H., Saraiva, A., Laucht, A., Kubicek, S., Jussot, J., Beyne, S., Raes, B., Li, R., Godfrin, C., Wan, D., De Greve, K., Dzurak, A. S.

Source: 2024 IEEE Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2024 IEEE. :11-12 Jun, 2024

Relation: 2024 IEEE Silicon Nanoelectronics Workshop (SNW)

An elongated quantum dot as a distributed charge sensor

Authors: Patomäki, S. M., Williams, J., Berritta, F., Laine, C., Fogarty, M. A., Leon, R. C. C., Jussot, J., Kubicek, S., Chatterjee, A., Govoreanu, B., Kuemmeth, F., Morton, J. J. L., Gonzalez-Zalba, M. F.

Source: Phys. Rev. Applied 21, 054042 (2024)

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics, Quantum Physics

Access URL: http://arxiv.org/abs/2301.01650

Comprehensive 300 mm process for Silicon spin qubits with modular integration

Authors: Elsayed, A., Godfrin, C., Dumoulin Stuyck, N.I., Shehata, M.M.K., Kubicek, S., Massar, S., Canvel, Y., Jussot, J., Hikavyy, A., Loo, R., Simion, G., Mongillo, M., Wan, D., Govoreanu, B., Li, R., Radu, I.P., Van Dorpe, P., De Greve, K.

Source: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023

Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Manufacturing high-Q superconducting {\alpha}-tantalum resonators on silicon wafers

Authors: Lozano, D. P., Mongillo, M., Piao, X., Couet, S., Wan, D., Canvel, Y., Vadiraj, A. M., Ivanov, Ts., Verjauw, J., Acharya, R., Van Damme, J., Mohiyaddin, F. A., Jussot, J., Gowda, P. P., Pacco, A., Raes, B., Van de Vondel, J., Radu, I. P., Govoreanu, B., Swerts, J., Potočnik, A., De Greve, K.

Subject Terms: Quantum Physics, Condensed Matter - Materials Science, Physics - Applied Physics

Access URL: http://arxiv.org/abs/2211.16437

TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design

Authors: Mohiyaddin, F. A., Simion, G., Stuyck, N. I. Dumoulin, Li, R., Elsayed, A., Shehata, M., Kubicek, S., Godfrin, C., Chan, B. T., Jussot, J., ubotaru, F. C, Brebels, S., Bufler, F. M., Eneman, G., Weckx, P., Matagne, P., Spessot, A., Govoreanu, B., Radu, I. P.

Source: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2020 International Conference o. :253-256 Sep, 2020

Relation: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms

Authors: Verjauw, J., Acharya, R., Van Damme, J., Ivanov, Ts., Lozano, D. Perez, Mohiyaddin, F. A., Wan, D., Jussot, J., Vadiraj, A. M., Mongillo, M., Heyns, M., Radu, I., Govoreanu, B., Potočnik, A.

Source: npj Quantum Inf 8, 93 (2022)

Subject Terms: Quantum Physics, Condensed Matter - Materials Science, Physics - Applied Physics

Access URL: http://arxiv.org/abs/2202.10303

An Integrated Silicon MOS Single-Electron Transistor Charge Sensor for Spin-Based Quantum Information Processing

Authors: Stuyck, N.D., Li, R., Kubicek, S., Mohiyaddin, F.A., Jussot, J., Chan, B.T., Simion, G., Govoreanu, B., Heyns, M., Radu, I.

Source: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 41(8):1253-1256 Aug, 2020

Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process

Authors: Stuyck, N. I. Dumoulin, Li, R., Godfrin, C., Elsayed, A., Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Shehata, M., Simion, G., Canvel, Y., Goux, L., Heyns, M., Govoreanu, B., Radu, I. P.

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics

Access URL: http://arxiv.org/abs/2108.11317

A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

Authors: Li, R., Stuyck, N. I. Dumoulin, Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Elsayed, A., Shehata, M., Simion, G., Godfrin, C., Canvel, Y., Ivanov, Ts., Goux, L., Govoreanu, B., Radu, I. P.

Source: 2020 IEEE International Electron Devices Meeting (IEDM 2020), 38.3.1-38.3.4

Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics, Quantum Physics

Access URL: http://arxiv.org/abs/2102.03929

Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators

Authors: Verjauw, J., Potočnik, A., Mongillo, M., Acharya, R., Mohiyaddin, F., Simion, G., Pacco, A., Ivanov, Ts., Wan, D., Vanleenhove, A., Souriau, L., Jussot, J., Thiam, A., Swerts, J., Piao, X., Couet, S., Heyns, M., Govoreanu, B., Radu, I.

Source: Phys. Rev. Applied 16, 014018 (2021)

Subject Terms: Physics - Applied Physics, Condensed Matter - Superconductivity, Quantum Physics

Access URL: http://arxiv.org/abs/2012.10761

Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing

Authors: Radu, I. P., Li, R., Potocnik, A., Ivanov, T., Wan, D., Kubicek, S., Stuyck, N. I. Dumoulin, Verjauw, J., Jussot, J., Canvel, Y., Godfrin, C., Mongillo, M., Acharya, R., Elsayed, A., Shehata, M., Piao, X., Pacco, A., Souriau, L., Couet, S., Chan, B. T., Craninckx, J., Parvais, B., Grill, A., Narasimhamoorthy, S., Van Winckel, S., Brebels, S., Mohiyaddin, F. A., Simion, G., Govoreanu, B.

Source: 2021 Symposium on VLSI Circuits VLSI Circuits, 2021 Symposium on. :1-2 Jun, 2021

Relation: 2021 Symposium on VLSI Circuits

Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process

Authors: Dumoulin Stuyck, N. I., Li, R., Godfrin, C., Elsayed, A., Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Shehata, M., Simion, G., Canvel, Y., Goux, L., Heyns, M., Govoreanu, B., Radu, I. P.

Source: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021

Relation: 2021 Symposium on VLSI Technology

Large-Scale 2D Spin-Based Quantum Processor with a Bi-Linear Architecture

Authors: Mohiyaddin, F.A., Li, R., Brebels, S., Simion, G., Dumoulin Stuyck, N. I., Godfrin, C., Shehata, M., Elsayed, A., Gys, B., Kubicek, S., Jussot, J., Canvel, Y., Massar, S., Weckx, P., Matagne, P., Mongillo, M., Govoreanu, B., Radu, I. P.

Source: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :27.5.1-27.5.4 Dec, 2021

Relation: 2021 IEEE International Electron Devices Meeting (IEDM)

High-Performance 300mm Integrated Superconducting Resonators for Quantum Computing Applications

Authors: Mongillo, M., Potocnik, A., Verjauw, J., Mohiyaddin, F.A., Ivanov, T., Acharya, R, Piao, X., Lozano, D.Perez, Wan, D., Pacco, A., Jussot, J., Souriau, L., Vadiraj, A. M., Swerts, J., Couet, S, Goux, L., Govoreanu, B., Iuliana, P., Radu

Source: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :40.5.1-40.5.4 Dec, 2021

Relation: 2021 IEEE International Electron Devices Meeting (IEDM)

A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

Authors: Li, R., Stuyck, N. I. Dumoulin, Kubicek, S., Jussot, J., Chan, B. T., Mohiyaddin, F. A., Elsayed, A., Shehata, M., Simion, G., Godfrin, C., Canvel, Y., Ivanov, Ts., Goux, L., Govoreanu, B., Radu, I. P.

Source: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :38.3.1-38.3.4 Dec, 2020

Relation: 2020 IEEE International Electron Devices Meeting (IEDM)

A Scalable One Dimensional Silicon Qubit Array with Nanomagnets

Authors: Simion, G., Mohiyaddin, F. A., Li, R., Shehata, M., Dumoulin Stuyck, N. I., Elsayed, A., Ciubotaru, F., Kubicek, S., Jussot, J., Chan, BT, Ivanov, Ts., Godfrin, C., Spessot, A., Matagne, P., Govoreanu, B., Radu, I. P.

Source: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :30.2.1-30.2.4 Dec, 2020

Relation: 2020 IEEE International Electron Devices Meeting (IEDM)

Moving Spins From Lab to Fab: A Silicon-Based Platform for Quantum Computing Device Technologies

Authors: Govoreanu, B., Kubicek, S., Jussot, J., Chan, B.T., Dumoulin-Stuyck, N.I., Mohiyaddin, F.A., Li, R., Simion, G., Ivanov, T., Mocuta, D., Lee, J., Radu, I.P.

Source: 2019 Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2019. :1-2 Jun, 2019

Relation: 2019 Silicon Nanoelectronics Workshop (SNW)

Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices

Authors: Mohiyaddin, F. A., Simion, G., Stuyck, N. I. Dumoulin, Li, R., Ciubotaru, F., Eneman, G., Bufler, F. M., Kubicek, S., Jussot, J., Chan, BT, Ivanov, Ts., Spessot, A., Matagne, P., Lee, J., Govoreanu, B., Raduimec, I. P.

Source: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :39.5.1-39.5.4 Dec, 2019

Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

Low charge noise quantum dots with industrial CMOS manufacturing.

Authors: Elsayed, A.^1,2, Shehata, M. M. K.^1,2, Godfrin, C.¹, Kubicek, S.¹, Massar, S.¹, Canvel, Y.¹, Jussot, J.¹, Simion, G.¹, Mongillo, M.¹, Wan, D.¹, Govoreanu, B.¹, Radu, I. P.¹, Li, R.¹, ruoyu.li@outlook.com, Van Dorpe, P.^1,2, De Greve, K.^1,3

Source: NPJ Quantum Information; 7/19/2024, Vol. 10 Issue 1, p1-9, 9p