Optimal drug regimens for improving ALP biochemical levels in patients with primary biliary cholangitis refractory to UDCA: a systematic review and Bayesian network meta-analysis

Authors: Wei Lin, Jun-xi Wang, Yi-juan Liu

Source: Systematic Reviews, Vol 13, Iss 1, Pp 1-12 (2024)

Subject Terms: Refractory primary biliary cholangitis, Ursodeoxycholic acid, Alkaline phosphatase, Medicine

File Description: electronic resource

Relation: https://doaj.org/toc/2046-4053

Access URL: https://doaj.org/article/9c67f7ba439d4324a344de69a98a46dc

Normally-off recessed MOS-gate AlGaN/GaN HEMTs with over +4V saturation drain current density and a 400V breakdown voltage

Authors: Zhe, Cheng, Yun, Zhang, Lian, Zhang, Yong-Bing, Zhao, Jun-Xi, Wang, Jin-Min, Li

Source: 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Wide Bandgap Semiconductors China (SSLChina: IFWS), 2016 13th China International Forum on Solid State Lighting: International Forum on. :72-76 Nov, 2016

Relation: 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

Growth and Structural Properties of InAlGaN Quaternary Alloys on Sapphire Substrates by RF-MBE

Authors: Bao-Zhu Wang, Xiao-Liang Wang, Xiao-Yan Wang, Xin-Hua Wang, Lun-Chun Guo, Hong-Ling Xiao, Jun-Xi Wang, Hong-Xin Liu, Yi-Ping Zeng, Jin-Min Li, Zhan-Guo Wang

Source: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on. :914-916 Oct, 2006

Relation: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Single logical qubit information encoding scheme with the minimal optical decoherence-free subsystem.

Authors: Li Dong¹, Jun-Xi Wang¹, Qing-Yang Li¹, Hong-Zhi Shen², Hai-Kuan Dong¹, Xiao-Ming Xiu^1,3, xiuxiaomingdl@126.com, Ya-Jun Gao¹

Source: Optics Letters; 3/1/2016, Vol. 41 Issue 5, p1030-1033, 4p

Nearly deterministic Fredkin gate based on weak cross-Kerr nonlinearities.

Authors: Li Dong¹, Yan-Fang Lin¹, Jun-Xi Wang¹, Qing-Yang Li¹, Hong-Zhi Shen², Hai-Kuan Dong¹, Yuan-Peng Ren³, Xiao-Ming Xiu^1,4, xiuxiaomingdl@126.com, Ya-Jun Gao¹, Choo Hiap Oh⁴

Source: Journal of the Optical Society of America. B, Optical Physics; 2/1/2016, Vol. 33 Issue 2, p253-260, 8p

Quantum secure direct communication against the collective noise with polarization-entangled Bell states.

Authors: Li Dong, Jun-Xi Wang, Qing-Yang Li, Hong-Zhi Shen, Hai-Kuan Dong, Xiao-Ming Xiu, Yuan-Peng Ren, Ya-Jun Gao

Source: Progress of Theoretical & Experimental Physics: PTEP; Dec2015, Vol. 2015 Issue 12, p1-12, 12p

Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography.

Authors: Kui, Wu, Tong-Bo, Wei, Ding, Lan, Hai-Yang, Zheng, Jun-Xi, Wang, Yi, Luo, Jin-Min, Li

Source: Chinese Physics B; 2014, Vol. 23 Issue 2, p028504-028507, 4p

Subject Terms: LIGHT emitting diodes, SILICA, PHOTONIC crystals, GALLIUM nitride, NANOSTRUCTURED materials, LITHOGRAPHY

A GENERATION SCHEM E OF THE DISTRIBUTED FOUR-PHOTON CLUSTER-TYPE POLARIZATION-ENTANGLED STATES EXPLOITING THE INTEGRATION OF ENTANGLEMENT GATES AND THE CONTROLLED PHASE GATE.

Authors: LI DONG^1,2 donglixm@163.com, JUN-XI WANG¹, XIAO-MING XIU^1,2, HAI-KUAN DONG¹ xiuxiaomingdl@126.com, DAN LI³, YA-JUN GAO¹

Source: International Journal of Quantum Information. Oct2013, Vol. 11 Issue 7, p1-16. 16p.

Subject Terms: *QUANTUM entanglement, *PHOTONS, *POLARIZATION (Electricity), *QUANTUM states, *QUANTUM theory, *NODAL analysis, *EINSTEIN-Podolsky-Rosen experiment

Effect of Hydrogen and Nitrogen Carrier Gas Ratio on the Structural and Optical Properties of AlInGaN Alloy.

Authors: Xiang-Xu, Feng, Nai-Xin, Liu, Lian, Zhang, Ning, Zhang, Jian-Ping, Zeng, Xue-Cheng, Wei, Zhe, Liu, Tong-Bo, Wei, Jun-Xi, Wang, Jin-Min, Li

Source: Chinese Physics Letters; Oct2013, Vol. 30 Issue 10, p108103-108106, 4p

Subject Terms: PHOTOLUMINESCENCE, RATIO analysis, HYDROGEN, NITROGEN, OPTICAL properties, INDIUM, ALUMINUM

Reduction of Efficiency Droop and Modification of Polarization Fields of InGaN-Based Green Light-Emitting Diodes via Mg-Doping in the Barriers.

Authors: Ning, Zhang, Zhe, Liu, Zhao, Si, Peng, Ren, Xiao-Dong, Wang, Xiang-Xu, Feng, Peng, Dong, Cheng-Xiao, Du, Shao-Xin, Zhu, Bing-Lei, Fu, Hong-Xi, Lu, Jin-Min, Li, Jun-Xi, Wang

Source: Chinese Physics Letters; Aug2013, Vol. 30 Issue 8, p087101-087103, 3p

Subject Terms: MAGNESIUM, DOPING agents (Chemistry), INDIUM gallium nitride, PHOTOCURRENTS, OPTICAL polarization, LIGHT emitting diodes

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate.

Authors: Qi Wang, Guo-Dong Yuan, Wen-Qiang Liu, Shuai Zhao, Lu Zhang, Zhi-Qiang Liu, Jun-Xi Wang, Jin-Min Li

Source: Chinese Physics B; Aug2019, Vol. 28 Issue 8, p1-1, 1p

Subject Terms: PHOSPHORS, METAL organic chemical vapor deposition, DIODES, QUANTUM wells, INDIUM

Effect of Nanorod Diameters on Optical Properties of GaN-Based Dual-Color Nanorod Arrays.

Authors: Liang-Sen Feng, Zhe Liu, Ning Zhang, Bin Xue, Jun-Xi Wang, Jin-Min Li

Source: Chinese Physics Letters; Jan2019, Vol. 36 Issue 1, p1-1, 1p

Subject Terms: NANORODS, OPTICAL properties, FABRICATION (Manufacturing), LIGHT emitting diodes, GALLIUM nitride

Influence of Al Preflow Time on Surface Morphology and Quality of AlN and GaN on Si (111) Grown by MOCVD*.

Authors: Bo-Ting Liu, Ping Ma, Xi-Lin Li, Jun-Xi Wang, Jin-Min Li

Source: Chinese Physics Letters; May2017, Vol. 34 Issue 5, p1-1, 1p

Subject Terms: X-ray diffraction, RADIOPACITY, LAUE experiment, ATOMIC force microscopy, NUCLEATION

High-Quality and Strain-Relaxation GaN Epilayer Grown on SiC Substrates Using AlN Buffer and AlGaN Interlayer.

Authors: Bo-Ting Liu, Shi-Kuan Guo, Ping Ma, Jun-Xi Wang, Jin-Min Li

Source: Chinese Physics Letters; Mar2017, Vol. 34 Issue 4, p1-1, 1p

Subject Terms: GALLIUM nitride, RELAXATION phenomena, CRYSTAL growth, SILICON carbide, SUBSTRATES (Materials science), ALUMINUM nitride

Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes.

Authors: Ning Zhang, Xue-Cheng Wei, Kun-Yi Lu, Liang-Sen Feng, Jie Yang, Bin Xue, Zhe Liu, Jin-Min Li, Jun-Xi Wang

Source: Chinese Physics Letters; Nov2016, Vol. 33 Issue 11, p1-1, 1p

Subject Terms: DIFFUSION, DOPING agents (Chemistry), OPTOELECTRONICS, LIGHT emitting diodes, POLARIZATION (Electricity)

Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition.

Authors: Peng Ren, Gang Han, Bing-Lei Fu, Bin Xue, Ning Zhang, Zhe Liu, Li-Xia Zhao, Jun-Xi Wang, Jin-Min Li

Source: Chinese Physics Letters; Jun2016, Vol. 33 Issue 6, p1-1, 1p

Subject Terms: GALLIUM nitride, METAL organic chemical vapor deposition, NANORODS spectra, TRANSMISSION electron microscopy, CATHODOLUMINESCENCE, DISLOCATION density

Effect of Stress in GaN/AlInGaN Grown on GaN Templates with Different Stress States.

Authors: Xiang-Xu Feng, Nai-Xin Liu, Ning Zhang, Tong-Bo Wei, Jun-Xi Wang, Jin-Min Li

Source: Chinese Physics Letters; May2014, Vol. 31 Issue 5, p1-1, 1p

Subject Terms: METAL organic chemical vapor deposition, SURFACE roughness, LIGHT emitting diodes, VAPOR phase epitaxial growth, MASS spectrometry, X-ray diffraction

Nearly deterministic preparation of the perfect W state with weak cross-Kerr nonlinearities.

Authors: Li Dong¹ donglixm@163.com, Jun-Xi Wang¹, Qing-Yang Li¹, Hong-Zhi Shen², Hai-Kuan Dong¹, Xiao-Ming Xiu^1,3 xiuxiaomingdl@126.com, Ya-Jun Gao¹, Choo Hiap Oh³

Source: Physical Review A: Atomic, Molecular & Optical Physics. Jan2016, Vol. 93 Issue 1, p1-1. 1p.

Subject Terms: *COHERENT states, *POLARIZED photons, *UNITARY transformations

The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si (111) substrates.

Authors: Zhe, Liu, Xiao-Liang, Wang, Jun-Xi, Wang, Guo-Xin, Hu, Lun-Chun, Guo, Jin-Min, Li

Source: Chinese Physics; May2007, Vol. 16 Issue 5, p1-1, 1p