Developing a list of Alert Alien Species in South Korea

Authors: Aram Jo, Jihee Kim, Jounghun Park, Yunjeong Cho, Su-gon Park, Dong Eon Kim

Source: Biodiversity Data Journal, Vol 12, Iss , Pp 1-14 (2024)

Subject Terms: Alert Alien Species, biological invasions, alien s, Biology (General), QH301-705.5

File Description: electronic resource

Relation: https://bdj.pensoft.net/article/125517/download/pdf/; https://bdj.pensoft.net/article/125517/download/xml/; https://bdj.pensoft.net/article/125517/; https://doaj.org/toc/1314-2828

Access URL: https://doaj.org/article/11053f4a2a1f443593f0844ecd795b89

Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory

Authors: Gilsang Yoon, Donghyun Ko, Jounghun Park, Donghwi Kim, Jungsik Kim, Jeong-Soo Lee

Source: IEEE Access, Vol 10, Pp 62423-62428 (2022)

Subject Terms: 3D NAND flash memory, bandgap-engineered tunneling, program/erase cycling, trap profile, TSCIS, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

File Description: electronic resource

Relation: https://ieeexplore.ieee.org/document/9794704/; https://doaj.org/toc/2169-3536

Access URL: https://doaj.org/article/88b50f89cd4341b4b8005f5c022f3bcb

Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory

Authors: Ukju An, Gilsang Yoon, Donghyun Go, Jounghun Park, Donghwi Kim, Jongwoo Kim, Jeong-Soo Lee

Source: Micromachines, Vol 14, Iss 12, p 2199 (2023)

Subject Terms: 3-D NAND flash memory, cross-temperature, threshold voltage variation, decomposition, poly-Si channel, grain boundary, Mechanical engineering and machinery, TJ1-1570

File Description: electronic resource

Relation: https://www.mdpi.com/2072-666X/14/12/2199; https://doaj.org/toc/2072-666X

Access URL: https://doaj.org/article/916f84299e074bf8b253c9c6b0aea724

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

Authors: Donghyun Go, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim, Jeong-Soo Lee

Source: Micromachines, Vol 14, Iss 11, p 2007 (2023)

Subject Terms: 3D NAND flash memory, noncircular cell, spike, TCAD simulation, threshold voltage distribution, trapped charge, Mechanical engineering and machinery, TJ1-1570

File Description: electronic resource

Relation: https://www.mdpi.com/2072-666X/14/11/2007; https://doaj.org/toc/2072-666X

Access URL: https://doaj.org/article/9c2ac228c01745649b71756b79e55f6d

Extraction of Nitride Trap Profile in 3-D NAND Flash Memory Using Intercell Program Pattern

Authors: Jounghun Park, Gilsang Yoon, Donghyun Go, Jungsik Kim, Jeong-Soo Lee

Source: IEEE Access, Vol 9, Pp 118794-118800 (2021)

Subject Terms: 3D NAND flash memory, data retention, lateral migration, trap profiling, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

File Description: electronic resource

Relation: https://ieeexplore.ieee.org/document/9521868/; https://doaj.org/toc/2169-3536

Access URL: https://doaj.org/article/30339e498b054011b50b62a88f13d0e5