Cell Operation Technologies to Overcome Scale-down Issues in 3D NAND Flash Memory

Authors: Kim, Wandong, Byeon, DaeSeok, Joe, Sung-Min, Lee, Jinyub, Song, Jai Hyuk

Source: 2022 International Conference on Electronics, Information, and Communication (ICEIC) Electronics, Information, and Communication (ICEIC), 2022 International Conference on. :298-299 Feb, 2022

Relation: 2022 International Conference on Electronics, Information, and Communication (ICEIC)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate

Authors: Kim, Doo-Hyun, Kim, Hyunggon, Yun, Sungwon, Song, Youngsun, Kim, Jisu, Joe, Sung-Min, Kang, Kyung-Hwa, Jang, Joonsuc, Yoon, Hyun-Jun, Lee, Kanabin, Kim, Minseok, Kwon, Joonsoo, Jo, Jonghoo, Park, Sehwan, Park, Jiyoon, Cho, Jisoo, Park, Sohyun, Kim, Garam, Bang, Jinbae, Kim, Heejin, Park, Jongeun, Lee, Deokwoo, Lee, Seonyong, Jang, Hwajun, Lee, Han-Jun, Shin, Donghyun, Park, Jungmin, Kim, Jungkwan, Kim, Jongmin, Jang, Kichang, Park, II Han, Moon, Seuna Hyun, Choi, Myung-Hoon, Kwak, Pansuk, Park, Joo-Yona, Choi, Youngdon, Kim, Sang-Lok, Lee, Seungjae, Kang, Dongku, Lim, Jeong-Don, Byeon, Dae-Seok, Song, Kiwhan, Choi, Junghwan, Hwang, Sang Joon, Jeong, Jaeheon

Source: 2020 IEEE International Solid-State Circuits Conference - (ISSCC) Solid-State Circuits Conference - (ISSCC), 2020 IEEE International. :218-220 Feb, 2020

Relation: 2020 IEEE International Solid-State Circuits Conference - (ISSCC)

Reconfigurable Cell String Having FET and Super-Steep Switching Diode Operation in 3D NAND Flash Memory

Authors: Choi, Nagyong, Kang, Ho-Jung, Joe, Sung-Min, Park, Byung-Gook, Lee, Jong-Ho

Source: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE 2nd. :220-222 Mar, 2018

Relation: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput

Authors: Lee, Seungjae, Kim, Chulbum, Kim, Minsu, Joe, Sung-min, Jang, Joonsuc, Kim, Seungbum, Lee, Kangbin, Kim, Jisu, Park, Jiyoon, Lee, Han-Jun, Kim, Minseok, Lee, Seonyong, Lee, SeonGeon, Bang, Jinbae, Shin, Dongjin, Jang, Hwajun, Lee, Deokwoo, Kim, Nahyun, Jo, Jonghoo, Park, Jonghoon, Park, Sohyun, Rho, Youngsik, Park, Yongha, Kim, Ho-joon, Lee, Cheon An, Yu, Chungho, Min, Youngsun, Kim, Moosung, Kim, Kyungmin, Moon, Seunghyun, Kim, Hyunjin, Choi, Youngdon, Ryu, YoungHwan, Choi, Jinwon, Lee, Minyeong, Kim, Jungkwan, Choo, Gyo Soo, Lim, Jeong-Don, Byeon, Dae-Seok, Song, Kiwhan, Park, Ki-Tae, Kyung, Kye-hyun

Source: 2018 IEEE International Solid-State Circuits Conference - (ISSCC) Solid-State Circuits Conference - (ISSCC), 2018 IEEE International. :340-342 Feb, 2018

Relation: 2018 IEEE International Solid-State Circuits Conference - (ISSCC)

Characterization of reliability in 3-D NAND flash memory

Authors: Lee, Jong-Ho, Joe, Sung-Min, Kang, Ho-Jung

Source: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on. :1-4 Oct, 2014

Relation: 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate

Authors: Lee, Seungjae, Lee, Jin-yub, Park, Il-han, Park, Jongyeol, Yun, Sung-won, Kim, Min-su, Lee, Jong-hoon, Kim, Minseok, Lee, Kangbin, Kim, Taeeun, Cho, Byungkyu, Cho, Dooho, Yun, Sangbum, Im, Jung-no, Yim, Hyejin, Kang, Kyung-hwa, Jeon, Suchang, Jo, Sungkyu, Ahn, Yang-lo, Joe, Sung-Min, Kim, Suyong, Woo, Deok-kyun, Park, Jiyoon, Park, Hyun-wook, Kim, Youngmin, Park, Jonghoon, Choi, Yongsu, Hirano, Makoto, Ihm, Jeong-Don, Jeong, Byunghoon, Lee, Seon-Kyoo, Kim, Moosung, Lee, Hokil, Seo, Sungwhan, Jeon, Hongsoo, Kim, Chan-ho, Kim, Hyunggon, Kim, Jintae, Yim, Yongsik, Kim, Hoosung, Byeon, Dae-Seok, Yang, Hyang-Ja, Park, Ki-Tae, Kyung, Kye-hyun, Choi, Jeong-Hyuk

Source: 2016 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2016 IEEE International. :138-139 Jan, 2016

Relation: 2016 IEEE International Solid-State Circuits Conference (ISSCC)

Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure

Authors: Kang, Ho-Jung, Choi, Nagyong, Joe, Sung-Min, Seo, Ji-Hyun, Choi, Eunseok, Park, Sung-Kye, Park, Byung-Gook, Lee, Jong-Ho

Source: 2015 Symposium on VLSI Technology (VLSI Technology) VLSI Technology (VLSI Technology), 2015 Symposium on. :T182-T183 Jun, 2015

Relation: 2015 Symposium on VLSI Technology

Effect of traps on transient bit-line current behavior in word-line stacked nand flash memory with poly-Si body

Authors: Kang, Ho-Jung, Jeong, Min-Kyu, Joe, Sung-Min, Seo, Ji-Hyun, Park, Sung-Kye, Jin, Sung Hun, Park, Byung-Gook, Lee, Jong-Ho

Source: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on. :1-2 Jun, 2014

Relation: 2014 IEEE Symposium on VLSI Technology

Machine-Learning-Based Read Reference Voltage Estimation for NAND Flash Memory Systems Without Knowledge of Retention Time

Authors: Choe, Hyemin, Jee, Jeongju, Lim, Seung-Chan, Joe, Sung Min, Park, Il Han, Park, Hyuncheol

Source: IEEE access. 8:176416-176429

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100108431091.0x000001&indx=1&recIds=ETOCvdc_100108431091.0x000001

A new read method suppressing effect of random telegraph noise in NAND flash memory by using hysteretic characteristic

Authors: Jeong, Min-Kyu, Joe, Sung-Min, Kang, Ho-Jung, Han, Kyoung-Rok, Cho, Gyuseok, Park, Sung-Kye, Park, Byung-Gook, Lee, Jong-Ho

Source: 2013 Symposium on VLSI Technology VLSI Technology (VLSIT), 2013 Symposium on. :T154-T155 Jun, 2013

Relation: 2013 Symposium on VLSI Technology

Analysis of Random Telegraph Noise and low frequency noise properties in 3-d stacked NAND flash memory with tube-type poly-Si channel structure

Authors: Jeong, Min-Kyu, Joe, Sung-Min, Seo, Chang-Su, Han, Kyung-Rok, Choi, Eunseok, Park, Sung-Kye, Lee, Jong-Ho

Source: 2012 Symposium on VLSI Technology (VLSIT) VLSI Technology (VLSIT), 2012 Symposium on. :55-56 Jun, 2012

Relation: 2012 IEEE Symposium on VLSI Technology

Investigation of reliability issue in tunneling and inter-poly dielectrics in floating gate NAND flash memory cell strings

Authors: Lee, Jong-Ho, Joe, Sung-Min

Source: The 4th IEEE International NanoElectronics Conference Nanoelectronics Conference (INEC), 2011 IEEE 4th International. :1-2 Jun, 2011

Relation: 2011 IEEE 4th International Nanoelectronics Conference (INEC)

Characterization of traps in 3-D stacked NAND flash memory devices with tube-type poly-Si channel structure

Authors: Jeong, Min-Kyu, Joe, Sung-Min, Jo, Bong-Su, Kang, Ho-Jung, Bae, Jong-Ho, Han, Kyoung-Rok, Choi, Eunseok, Cho, Gyuseok, Park, Sung-Kye, Park, Byung-Gook, Lee, Jong-Ho

Source: 2012 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2012 IEEE International. :9.3.1-9.3.4 Dec, 2012

Relation: 2012 IEEE International Electron Devices Meeting (IEDM)

High-Density Three-Dimensional Stacked nand Flash With Common Gate Structure and Shield Layer.

Authors: Jeong, Min-Kyu, Joe, Sung-Min, Shin, Hyungcheol, Park, Byung-Gook, Lee, Jong-Ho

Source: IEEE Transactions on Electron Devices; December 2011, Vol. 58 Issue 12, p4212-4218, 7p

Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate NAND Flash Memory String.

Authors: Joe, Sung-Min, Yi, Jeong-Hyong, Park, Sung-Kye

Source: IEEE Transactions on Electron Devices; January 2011, Vol. 58 Issue 1, p67-73, 7p

Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in NAND Flash Memory Strings.

Authors: Joe, Sung-Min, Yi, Jeong-Hyong, Park, Sung-Kye

Source: IEEE Electron Device Letters; July 2010, Vol. 31 Issue 7, p635-637, 3p

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