Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer

Authors: Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden

Source: Advanced Photonics Research, Vol 6, Iss 2, Pp n/a-n/a (2025)

Subject Terms: 2D/3D heterojunction, hole injection layer, p‐doped hexagonal boron nitride, UV light‐emitting diodes, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467

File Description: electronic resource

Relation: https://doaj.org/toc/2699-9293

Access URL: https://doaj.org/article/3c1db543c47143f0b2c3d282399df1c1

Natural Boron and 10B‑Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors

Authors: Adama Mballo, Ali Ahaitouf, Suresh Sundaram, Ashutosh Srivastava, Vishnu Ottapilakkal, Rajat Gujrati, Phuong Vuong, Soufiane Karrakchou, Mritunjay Kumar, Xiaohang Li, Yacine Halfaya, Simon Gautier, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden

Source: ACS Omega, Vol 7, Iss 1, Pp 804-809 (2021)

Subject Terms: Chemistry, QD1-999

File Description: electronic resource

Relation: https://doaj.org/toc/2470-1343

Access URL: https://doaj.org/article/ef9d63bd4fda4090a25cc0046b2eac8d

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Authors: Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden

Source: Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)

Subject Terms: Medicine, Science

File Description: electronic resource

Relation: https://doaj.org/toc/2045-2322

Access URL: https://doaj.org/article/bfb51b0b6b3648d6979cc29208c00b7b

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Authors: Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden

Source: Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)

Subject Terms: Medicine, Science

File Description: electronic resource

Relation: https://doaj.org/toc/2045-2322

Access URL: https://doaj.org/article/6af062edf51245c6a02c3acae7da9630

Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

Authors: Adama Mballo, Ashutosh Srivastava, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, Yacine Halfaya, Simon Gautier, Paul L. Voss, Ali Ahaitouf, Jean Paul Salvestrini, Abdallah Ougazzaden

Source: Nanomaterials, Vol 11, Iss 1, p 211 (2021)

Subject Terms: h-BN, magnesium, doping, wide bandgap, heterojunction, Chemistry, QD1-999

File Description: electronic resource

Relation: https://www.mdpi.com/2079-4991/11/1/211; https://doaj.org/toc/2079-4991

Access URL: https://doaj.org/article/19aecf5ff766470baa25d4afad2b5c48

Photovoltaic Concentration: Research and Development

Authors: Sarah El Himer, Salima El Ayane, Sara El Yahyaoui, Jean Paul Salvestrini, Ali Ahaitouf

Source: Energies, Vol 13, Iss 21, p 5721 (2020)

Subject Terms: concentrated photovoltaic, primary optics, secondary optics, efficiency, concentration, acceptance angle, Technology

File Description: electronic resource

Relation: https://www.mdpi.com/1996-1073/13/21/5721; https://doaj.org/toc/1996-1073

Access URL: https://doaj.org/article/d8eb33b94089437b8c411054f4dba9bc

Simulation and experimental validation in outdoor conditions of a CPV system based on both pyramid and cone secondary optical elements

Authors: Ali Ahaitouf, Sara El-yahyaoui, Sarah Elhimer, Salima El-Ayane, Jean-Paul Salvestrini, Abdallah Ougazzaden

Source: Energy Conversion and Management: X, Vol 16, Iss , Pp 100278- (2022)

Subject Terms: Concentrator photovoltaic, Fresnel lens, Secondary optic, Pyramid, Optical efficiency, Acceptance angle, Engineering (General). Civil engineering (General), TA1-2040

File Description: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2590174522001015; https://doaj.org/toc/2590-1745

Access URL: https://doaj.org/article/5dec4d0ecdfd44cfb4ed544cbe5e43b4

Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

Authors: Yacine Halfaya, Chris Bishop, Ali Soltani, Suresh Sundaram, Vincent Aubry, Paul L. Voss, Jean-Paul Salvestrini, Abdallah Ougazzaden

Source: Sensors, Vol 16, Iss 3, p 273 (2016)

Subject Terms: AlGaN/GaN heterostructure, HEMT transistor, NOx and NH3, automotive exhaust line, gas sensor, Chemical technology, TP1-1185

File Description: electronic resource

Relation: http://www.mdpi.com/1424-8220/16/3/273; https://doaj.org/toc/1424-8220

Access URL: https://doaj.org/article/bdcdfe00bfe04ccca6c32b31580aeb8b

Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I–V and admittance measurement.

Authors: Neslihan Ayarcı Kuruoğlu¹, nayarci@yildiz.edu.tr, Orhan Özdemir¹, Kutsal Bozkurt¹, Suresh Sundaram², Jean-Paul Salvestrini^2,3, Abdallah Ougazzaden^2,4, Quentin Gaimard⁵, Sofiane Belahsene⁵, Kamel Merghem⁵, Abderrahim Ramdane⁵

Source: Journal of Physics D: Applied Physics; 12/20/2017, Vol. 50 Issue 50, p1-1, 1p

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates.

Authors: Renaud Puybaret, David J Rogers, Youssef El Gmili, Suresh Sundaram, Matthew B Jordan, Xin Li, Gilles Patriarche, Ferechteh H Teherani, Eric V Sandana, Philippe Bove, Paul L Voss, Ryan McClintock, Manijeh Razeghi, Ian Ferguson, Jean-Paul Salvestrini, Abdallah Ougazzaden

Source: Nanotechnology; 5/12/2017, Vol. 28 Issue 19, p1-1, 1p

Subject Terms: ZINC oxide, INDIUM compounds, NANOSTRUCTURED materials

Transport mechanisms in Schottky diodes realized on GaN.

Authors: Sarrah Amor, Ali Ahaitouf, Abdelaziz Ahaitouf, Jean Paul Salvestrini, Abdellah Ougazzaden

Source: IOP Conference Series: Materials Science & Engineering; Mar2017, Vol. 186 Issue 1, p1-1, 1p

Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP.

Authors: Ali Ahaitouf, Abdelaziz Ahaitouf, Jean Paul Salvestrini, Hussein Srour

Source: Journal of Semiconductors; Oct2011, Vol. 32 Issue 10, p1-1, 1p