Flash Memory and Its Manufacturing Technology for Sustainable World

Authors: Ishimaru, K., Fujiwara, M., Miyagawa, H., Aiba, Y.

Source: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 10:737-743 2022

Analysis and Optimization of Defect Generation Due to Mechanical Stress in High-Density SRAM

Authors: Ishimaru, K., Tamura, M., Fujii, O.

Source: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 9:1103-1109 2021

SSCS WiC and EDS WiEDS Diversity Panel Luncheon: “How Does Diversity Impact Productivity in Your Organization?” [Society News]

Authors: Li, P., Menon, P.S., Ishimaru, K.

Source: IEEE Solid-State Circuits Magazine IEEE Solid-State Circuits Mag. Solid-State Circuits Magazine, IEEE. 15(4):64-64 Jan, 2023

Sensor Fusion of Intensity and Depth Cues using the ChiNet for Semantic Segmentation of Road Scenes

Authors: John, V., Nithilan, M. K., Mita, S., Tehrani, H., Konishi, M., Ishimaru, K., Oishi, T.

Source: 2018 IEEE Intelligent Vehicles Symposium (IV) Intelligent Vehicles Symposium (IV), 2018 IEEE. :585-590 Jun, 2018

Relation: 2018 IEEE Intelligent Vehicles Symposium (IV)

Automated driving by monocular camera using deep mixture of experts

Authors: John, V., Mita, S., Tehrani, H., Ishimaru, K.

Source: 2017 IEEE Intelligent Vehicles Symposium (IV) Intelligent Vehicles Symposium (IV), 2017 IEEE. :127-134 Jun, 2017

Relation: 2017 IEEE Intelligent Vehicles Symposium (IV)

Future of Non-Volatile Memory -From Storage to Computing-

Authors: Ishimaru, K.

Source: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :1.3.1-1.3.6 Dec, 2019

Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

Guest Editorial Special Section on the Second Electron Devices Technology and Manufacturing (EDTM) Conference 2018

Authors: Ishimaru, K., Horiguchi, N., Nojiri, K., Zhang, P.L., Berger, P.R.

Source: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 6:1197-1199 2018

Reproducible and High-Resolution Analysis on Ultra-Shallow-Junction CMOSFETs by Scanning Spreading Resistance Microscopy

Authors: Zhang, L., Ohuchi, K., Adachi, K., Ishimaru, K., Takayanagi, M., Fukushima, N.

Source: 2006 International Workshop on Junction Technology Junction Technology, 2006. IWJT '06. International Workshop on. :108-111 2006

Relation: 2006 International Workshop on Junction Technology

Direct Observation of 2-D Dopant Profiles of MOSFETs Activated by Millisecond Anneal

Authors: Adachi, K., Ohuchi, K., Aoki, N., Tanimoto, H., Tsujii, H., Eyben, P., Vanhaeren, D., Vandervorst, W., Ishimaru, K., Ishiuchi, H.

Source: 2006 International Workshop on Junction Technology Junction Technology, 2006. IWJT '06. International Workshop on. :104-107 2006

Relation: 2006 International Workshop on Junction Technology

Design guideline for halo condition on CMOSFETs utilizing FLA

Authors: Tsujii, H., Adachi, K., Ohuchi, K., Aoki, N., Ito, T., Matsuo, K., Suguro, K., Ishimaru, K., Ishiuchi, H.

Source: Extended Abstracts of the Fifth International Workshop on Junction Technology Junction Technology Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on. :111-114 2005

Relation: Extended Abstracts of the Fifth International Workshop on Junction Technology

Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length

Authors: Okano, K., Izumida, T., Kawasaki, H., Kaneko, A., Yagishita, A., Kanemura, T., Kondo, M., Ito, S., Aoki, N., Miyano, K., Ono, T., Yahashi, K., Iwade, K., Kubota, T., Matsushita, T., Mizushima, I., Inaba, S., Ishimaru, K., Suguro, K., Eguchi, K., Tsunashima, Y., Ishiuchi, H.

Source: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :721-724 2005

Relation: International Electron Devices Meeting 2005

HfSiON-CMOSFET technology for low standby power application

Authors: Takayanagi, M., Watanabe, T., Iijima, R., Koyama, M., Koike, M., Ino, T., Kamimuta, Y., Sekine, K., Eguchi, K., Nishiyama, A., Ishimaru, K.

Source: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :882-885 2005

Relation: International Electron Devices Meeting 2005

Sidewall transfer process and selective gate sidewall spacer formation technology for sub-15nm finfet with elevated source/drain extension

Authors: Kaneko, A., Yagishita, A., Yahashi, K., Kubota, T., Omura, M., Matsuo, K., Mizushima, I., Okano, K., Kawasaki, H., Inaba, S., Izumida, T., Kanemura, T., Aoki, N., Ishimaru, K., Ishiuchi, H., Suguro, K., Eguchi, K., Tsunashima, Y.

Source: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :844-847 2005

Relation: International Electron Devices Meeting 2005

Error evaluation of C-V characteristic measurements in ultra-thin gate dielectrics

Authors: Suto, H., Inaba, S., Ishimaru, K.

Source: Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516) Microelectronic test structures Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on. :221-226 2004

Relation: Proceedings of the 2004 International Conference on Microelectronic Test Structures

Investigation of hot carrier effects in n-MISFETs with HfSiON gate dielectric

Authors: Takayanagi, M., Watanabe, T., Iijima, R., Ishimaru, K., Tsunashima, Y.

Source: 2004 IEEE International Reliability Physics Symposium. Proceedings Reliability physics Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International. :13-17 2004

Relation: 2004 IEEE International Reliability Physics Symposium. Proceedings

Impact of parasitic resistance and silicon layer thickness scaling for strained-silicon MOSFETs on relaxed Si/sub 1-x/Ge/sub x/ virtual substrate

Authors: Kawasaki, H., Ohuchi, K., Oishi, A., Fujii, O., Tsujii, H., Ishida, T., Kasai, K., Okayama, Y., Kojima, K., Adachi, K., Aoki, N., Kanemura, T., Hagishima, D., Fujiwara, M., Inaba, S., Ishimaru, K., Nagashima, N., Ishiuchi, H.

Source: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :169-172 2004

Relation: 2004 International Electron Devices Meeting

Impact of Hf concentration on performance and reliability for HfSiON-CMOSFET

Authors: Watanabe, T., Takayanagi, M., Kojima, K., Ishimaru, K., Ishiuchi, H., Sekine, K., Yamasaki, H., Eguchi, K.

Source: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :507-510 2004

Relation: 2004 International Electron Devices Meeting

Low power logic circuit and SRAM cell applications with silicon on depletion layer CMOS (SODEL CMOS) technology

Authors: Inaba, S., Nagano, H., Miyano, K., Mizushima, I., Okayama, Y., Nakauchi, T., Ishimaru, K., Ishiuchi, H.

Source: Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571) Custom integrated circuists Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004. :225-228 2004

Relation: Proceedings of the IEEE 2004 Custom Integrated Circuits Conference

Performance improvement in image retrieval utilizing image directory on gigabit network for distributing industrial product information

Authors: Xinlei Wang, Suzuki, K., Ikeda, H., Ishimaru, K., Suzuki, J.

Source: 38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003. Industry applications conference Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the. 1:17-22 vol.1 2003

Relation: Conference Record of the 2003 IEEE Industry Applications Conference. 38th IAS Annual Meeting

How should control and body dynamics be coupled? A robotic case study

Authors: Ishiguro, A., Ishimaru, K., Hayakawa, K., Kawakatsu, T.

Source: Proceedings 2003 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS 2003) (Cat. No.03CH37453) Intelligent robots and systems Intelligent Robots and Systems, 2003. (IROS 2003). Proceedings. 2003 IEEE/RSJ International Conference on. 2:1727-1732 vol.2 2003

Relation: 2003 IEEE/RSJ International Conference on Intelligent Robots and Systems