Annealing behavior of low temperature grown GaAs investigated by raman spectroscopy

Authors: Vincze, A., Kovac, J., Srnanek, R., Sigmund, J., Hartnagel, H.L., Irmer, G.

Source: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on. :115-118 2004

Relation: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004

Hydration and Ion-Pair Formation of NaNO~3(aq): A Vibrational Spectroscopic and Density Functional Theory Study

Authors: Rudolph, W. W., Fischer, D., Irmer, G.

Source: Applied spectroscopy. 75(4):395-411

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN626933449&indx=1&recIds=ETOCRN626933449

Near infrared inelastic light scattering spectroscopy of high efficiency solar cells device structures based on III-V compounds

Authors: Bairamov, B.H., Ipatova, I.P., Negoduyko, V.K., Voitenko, V.A., Toporov, V.V., Irmer, G., Monecke, J.

Source: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Photovoltaic energy conversion Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on. 2:1822-1825 vol.2 1994

Relation: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

Diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy

Authors: Srnanek, R., Irmer, G., Zalusky, R., Dubecky, F., Kudela, R., Vincze, A., Novotny, I., John, J.

Source: 2006 International Conference on Advanced Semiconductor Devices and Microsystems Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on. :55-58 Oct, 2006

Relation: 2006 International Conference on Advanced Semiconductor Devices and Microsystems

Micro-Raman scattering: A versatile tool for characterization of semiconductor structures

Authors: Irmer, G.

Source: 2006 International Conference on Advanced Semiconductor Devices and Microsystems Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on. :133-138 Oct, 2006

Relation: 2006 International Conference on Advanced Semiconductor Devices and Microsystems

Investigation of Nickel Silicide Contact Layers for Power Diodes

Authors: Satka, A., Srnanek, R., Vincze, A., Donoval, D., Irmer, G., Kovac, J.

Source: 2006 International Conference on Advanced Semiconductor Devices and Microsystems Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on. :147-150 Oct, 2006

Relation: 2006 International Conference on Advanced Semiconductor Devices and Microsystems

Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering.

Authors: Irmer, G., Brumme, T., Herms, M.

Source: Journal of Materials Science: Materials in Electronics; Oct2008 Supplement 1, Vol. 19, pS51-S57, 7p

Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing.

Authors: Sarua, A., Irmer, G., Monecke, J.

Source: Journal of Applied Physics; December 15 2000, Vol. 88 Issue 12, p7006-7012, 7p

Size analysis of nanocrystals in semiconductor doped silicate glasses with anomalous small-angle x ray and Raman scattering.

Authors: Irmer, G., Monecke, J., Verma, P.

Source: Journal of Applied Physics; August 15 2000, Vol. 88 Issue 4, p1873-1879, 7p

Hole mobilities and the effective Hall factor in p-type GaAs.

Authors: Wenzel, M., Irmer, G., Monecke, J.

Source: Journal of Applied Physics; June 15 1997, Vol. 81, p7810-7816, 7p

Local crystal orientation in III-V semiconductors: polarization selective Raman microprobe measurements.

Authors: Irmer, G.

Source: Journal of Applied Physics; December 15 1994, Vol. 76, p7768-7773, 6p

Determination of the charge carrier concentration across growth striations in n-GaAs by Raman spectroscopy.

Authors: Herms, M., Irmer, G., Monecke, J.

Source: Journal of Applied Physics; January 1 1992, Vol. 71, p432-435, 4p

Raman spectroscopic characterization of light rare earth ions: La3+, Ce3+, Pr3+, Nd3+ and Sm3+- hydration and ion pair formation

Authors: Rudolph, W., Irmer, G.

Source: DALTON TRANSACTIONS. 46(13):4235-4244

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN383818343&indx=1&recIds=ETOCRN383818343

A Raman Spectroscopic Study of Aqueous La(CH3CO2)3 Solutions and La(CH3CO2)3·1.5 H2O(cr)

Authors: Rudolph, W. W., Irmer, G.

Source: JOURNAL OF SOLUTION CHEMISTRY. 46(1):190-214

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCRN384425584&indx=1&recIds=ETOCRN384425584

Microwave and Conventional Sintering: Raman Spectroscopic and Microscopic Investigations of Sr-Modified Pb(Zr,Ti)O3 Piecoceramics
International conference of the European Ceramic Society

Authors: Dorner-Reisel, A., Mueller, J., Klemm, V., Schoeps, S., Lenk, A., Schmutzler, G., Irmer, G.

Source: PROCEEDINGS OF THE INTERNATIONAL CONFERENCE OF THE EUROPEAN CERAMIC SOCIETY -CD ROM EDITION-. CONF 10th:590-596

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN075369825&indx=1&recIds=ETOCCN075369825

Study of in-depth strain variation in ion-irradiated GaN
Defects-recognition, imaging and physics in semiconductors; DRIP-XII 2007

Authors: Herms, M., Zeimer, U., Sonia, G., Brunner, F., Richter, E., Weyers, M., Tränkle, G. n., Behm, T., Irmer, G., Pensl, G.

Source: JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS. 19(SUPPL 1):68-72

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN070612160&indx=1&recIds=ETOCCN070612160

Microstructure of a-plane ( Formula Not Shown ) GaN ELOG stripe patterns with different in-plane orientation
Defects-recognition, imaging and physics in semiconductors; DRIP-XII 2007

Authors: Wernicke, T., Zeimer, U., Herms, M., Weyers, M., Kneissl, M., Irmer, G.

Source: JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS. 19(SUPPL 1):46-50

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN070611969&indx=1&recIds=ETOCCN070611969

Semiconductors and Biomedical Structures for Nanobiometric Applications
Nordic-baltic conference on biomedical engineering and medical physics; NBC - 14th Nordic-Baltic conference

Authors: Bairamov, B.H., Toporov, V.V., Bayramov, F.B., Vasidev, M., Dutta, M., Stroscio, M.A., Irmer, G.

Source: IFMBE PROCEEDINGS. 20:594-597

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Diamond-like carbon films for polyethylene femoral parts: Raman and FT-IR spectroscopy before and after incubation in simulated body liquid
Conference on solid state analysis

Authors: Dorner-Reisel, A., Gärtner, G., Reisel, G., Irmer, G.

Source: ANALYTICAL AND BIOANALYTICAL CHEMISTRY. 390(6):1487-1493

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Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC
Photon-assisted synthesis and processing of functional materials

Authors: Wernicke, T., Kruger, O., Herms, M., Wurfl, J., Kirmse, H., Neumann, W., Behm, T., Irmer, G., Trankle, G.

Source: APPLIED SURFACE SCIENCE. 253(19):8008-8014

Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCCN065403856&indx=1&recIds=ETOCCN065403856