Mechanical stress caused by adsorption of O or N on a Ga-terminated (100) GaAs surface: O gives compressive stress but N don't

Authors: Seto, H., Miyamura, S., Inokuma, T., Iiyama, K., Takamiya, S.

Source: 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on. :171-174 2004

Relation: 2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM

Diamond microfabrication by imprinting with nickel mold under high temperature

Authors: Tabakoya, T., Nagai, M., Sakauchi, K., Nakamura, Y., Kobayashi, K., Kato, H., Kato, Y., Ogura, M., Takeuchi, D., Makino, T., Yamasaki, S., Nebel, C.E., Zhang, X., Matsumoto, T., Inokuma, T., Tokuda, N.

Source: In Diamond & Related Materials April 2021 114

Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment

Authors: Paul, N.C., Ohta, Y., Tezuka, D., Nasuno, M., Yamamura, Y., Inokuma, T., Iiyama, K., Takamiya, S.

Source: Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Indium phosphide and related materials Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. :217-220 2002

Relation: Proceedings of 14th Indium Phosphide and Related Materials Conference (IPRM)

Study of GaAs[001] surface with adsorbed oxygen

Authors: Kasai, Y., Yamamura, Y., Inokuma, T., Iiyama, K., Takamiya, S.

Source: Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Indium phosphide and related materials Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On. :318-321 2001

Relation: Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM

Formation of U-shaped diamond trenches with vertical {111} sidewalls by anisotropic etching of diamond (110) surfaces

Authors: Nagai, M., Nakamura, Y., Yamada, T., Tabakoya, T., Matsumoto, T., Inokuma, T., Nebel, C.E., Makino, T., Yamasaki, S., Tokuda, N.

Source: In Diamond & Related Materials March 2020 103

Thermal stability and breakdown strength of carbon-doped SiO2:F films prepared by plasma-enhanced chemical vapor deposition method.

Authors: Lubguban, J. Jr, Kurata, Y., Inokuma, T.

Source: Journal of Applied Physics; April 15 2000, Vol. 87 Issue 8, p3715-3722, 8p

Relationship between the stress and bonding properties of amorphous SiNx:H films.

Authors: Hasegawa, S., Amano, Y., Inokuma, T.

Source: Journal of Applied Physics; December 15 1992, Vol. 72, p5676-5681, 6p

Structural change of polycrystalline silicon films with different deposition temperature.

Authors: Hasegawa, S., Sakata, M., Inokuma, T.

Source: Journal of Applied Physics; April 1 1999, Vol. 85 Issue 7, p3844-3849, 6p

Effects of deposition temperature on polycrystalline silicon films using plasma-enhanced chemical vapor deposition.

Authors: Hasegawa, S., Sakata, M., Inokuma, T.

Source: Journal of Applied Physics; July 1 1998, Vol. 84 Issue 1, p584-588, 5p

Optical properties of Si clusters and Si-nanocrystallites in high-temperature annealed SiOx films.

Authors: Inokuma, T., Wakayama, Y., Muramoto, T.

Source: Journal of Applied Physics; February 15 1998, Vol. 83 Issue 4, p2228-2234, 7p

Bonding structure and characteristics of defects of near-stoichiometric silicon nitride films.

Authors: Hasegawa, S., Ikeda, M., Inokuma, T.

Source: Journal of Applied Physics; September 1 1996, Vol. 80, p2896-2903, 8p

Structure and grain boundary defects of recrystallized silicon films prepared from amorphous silicon deposited using disilane.

Authors: Hasegawa, S., Watanabe, S., Inokuma, T.

Source: Journal of Applied Physics; March 1 1995, Vol. 77, p1938-1947, 10p

Structure and grain boundary defects of glow-discharge polycrystalline silicon films deposited using disilane.

Authors: Hasegawa, S., Fujimoto, E., Inokuma, T.

Source: Journal of Applied Physics; January 1 1995, Vol. 77, p357-366, 10p

Effects of active hydrogen on the stress relaxation of amorphous SiNx:H films.

Authors: Hasegawa, S., Amano, Y., Inokuma, T.

Source: Journal of Applied Physics; February 1 1994, Vol. 75, p1493-1500, 8p

Effects of high-temperature annealing on electron spin resonance in SiO x films prepared by R. F. sputtering system

Authors: Shamekh, A.M.A., Tokuda, N., Inokuma, T.

Source: In Journal of Non-Crystalline Solids 2011 357(3):981-985

The Microstructure of RuO2Thick Film Resistors and the Influence of Glass Particle Size on their Electrical Properties

Authors: Inokuma, T., Taketa, Y., Haradome, M.

Source: IEEE Transactions on Components, Hybrids, and Manufacturing Technology IEEE Trans. Comp., Hybrids, Manufact. Technol. Components, Hybrids, and Manufacturing Technology, IEEE Transactions on. 7(2):166-175 Jun, 1984

Roles of SiH 4 and SiF 4 in growth and structural changes of poly-Si films

Authors: Haddad-Adel, A., Inokuma, T., Kurata, Y., Hasegawa, S.

Source: In Surface Science 2007 601(5):1429-1436

Roles of SiH 4 and SiF 4 in growth and structural changes of poly-Si films

Authors: Adel, A. Haddad, Inokuma, T., Kurata, Y., Hasegawa, S.

Source: In Surface Science 2006 600(19):4418-4425

Formation of ultrathin Si xN y layers on silicon utilizing PECVD

Authors: Guo, Ruofeng, Kurata, Y., Inokuma, T., Hasegawa, S.

Source: In Journal of Non-Crystalline Solids 2005 351(37):3006-3012

Characterization of structure and role of different textures in polycrystalline Si films

Authors: Haddad Adel, A., Inokuma, T., Kurata, Y., Hasegawa, S.

Source: In Journal of Non-Crystalline Solids 2005 351(24):2107-2114